ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A FEATURES • Center amplifying gate • International standard case TO-209AE (TO-118) RoHS • Hermetic metal case with ceramic insulator COMPLIANT • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Lead (Pb)-free • Designed and qualified for industrial level TO-209AE (TO-118) TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY • Controlled DC power supplies IT(AV) 330 A • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 330 A 75 °C 520 ITSM I2 t 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 VDRM/VRRM tq Typical TJ A kA2s 400 to 2000 V 100 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST330S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: [email protected] 50 www.vishay.com 1 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM VALUES UNITS 180° conduction, half sine wave TEST CONDITIONS 330 A 75 °C DC at 75 °C case temperature 520 t = 10 ms 9000 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 9420 Sinusoidal half wave, initial TJ = TJ maximum 7920 405 370 287 100 % VRRM reapplied 4050 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.834 VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.898 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.687 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.636 Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 VTM Maximum holding current IH Typical latching current IL kA2s 262 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 7570 600 TJ = 25 °C, anode supply 12 V resistive load 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94409 Revision: 11-Aug-08 ST330SPbF Series Phase Control Thyristors (Stud Version), 330 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp ≤ 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp ≤ 5 ms 3.0 TJ = 25 °C IGT TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C UNITS W 20 TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate current required to trigger MAX. 200 - 100 200 50 - 2.5 - 1.8 3 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs Mounting torque, ± 10 % DC operation 0.10 Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N·m (lbf · in) 535 g Approximate weight Case style °C See dimension - link at the end of datasheet K/W TO-209AE (TO-118) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 ST330SPbF Series Vishay High Power Products Phase Control Thyristors ST330S Series RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 30° 90 60° 90° 120° 80 180° 70 0 50 100 150 200 250 300 130 Maximum Allowable Case Temperature (°C) 130 350 ST330S Series RthJC (DC) = 0.10 K/ W 120 110 100 Conduc tion Period 90 30° 80 60° 90° 120° 70 180° DC 60 0 100 200 300 400 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 480 elt -D a 0.2 K/ W RMSLimit 280 K/ W W K/ 320 K/ W 03 0. 360 0. 08 0. 12 = 400 A 180° 120° 90° 60° 30° 440 hS R t R Maximum Average On-state Power Loss(W) Maximum Allowable Case Temperature (°C) (Stud Version), 330 A 240 200 Conduction Angle 160 120 ST330SSeries TJ = 125°C 80 40 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 50 100 150 200 250 300 350 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Average On-state Current (A) 650 600 550 DC 180° 120° 90° 60° 30° 03 0. W K/ 0. 08 = K/ W 0.1 2K /W ta el -D R 400 350 SA th 500 450 R Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.2 300 RMSLimit 250 200 Conduction Period 150 ST330SSeries TJ = 125°C 100 50 K/ W 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 100 200 300 400 500 Average On-state Current (A) 600 25 50 75 100 125 Maximum Allowable Ambient Temp erature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94409 Revision: 11-Aug-08 ST330SPbF Series Peak Half Sine Wave On-state Current (A) 8000 Peak Half Sine Wave On-state Current (A) Phase Control Thyristors (Stud Version), 330 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 ST330S Series 4000 3500 1 10 100 Vishay High Power Products 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapp lied 7000 Rated VRRM Reapplied 6000 5000 4000 ST330SSeries 3000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 Tj = 25 °C Tj = 125 °C ST330S Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST330SSeries 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) 1 Tj=-40 °C Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Frequency Limited by PG(AV) Device: ST330SSeries 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 33 0 S 16 P 0 PbF 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4"-16UNF-2A threads 7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 8 - 1 = Fast-on terminals (gate and auxiliary cathode leads) Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95080 For technical questions, contact: [email protected] Document Number: 94409 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-209AE (TO-118) DIMENSIONS in millimeters (inches) Ceramic housing 22 (0.87) MAX. 4.3 (0.17) DIA. White gate 10.5 (0.41) NOM. Red silicon rubber 245 (9.65) ± 10 (0.39) Red cathode 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. White shrink 27.5 (1.08) MAX. 47 (1.85) MAX. 21 (0.82) MAX. Red shrink SW 45 3/4"16 UNF-2A (1) 49 (1.92) MAX. Fast-on terminals AMP. 280000-1 REF-250 22 (0. 86 )M IN . 9.5 (0. 3 7) MI N. 4.5 (0.18) MAX. Flexible leads C.S. 50 mm2 (0.078 s.i.) Note (1) For metric device: M24 x 1.5 - length 21 (0.83) maximum Document Number: 95080 Revision: 02-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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