VISHAY ST110S08P1PBF

ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 110 A
FEATURES
• Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with
(Glass-metal seal over 1200 V)
ceramic insulator
• Compliant to RoHS directive 2002/95/EC
TO-209AC (TO-94)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
• DC motor controls
IT(AV)
110 A
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
110
A
90
°C
175
IT(RMS)
ITSM
I2t
50 Hz
2700
60 Hz
2830
50 Hz
36.4
60 Hz
33.2
VDRM/VRRM
Typical
tq
TJ
A
kA2s
400 to 1600
V
100
μs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
ST110S
Document Number: 94393
Revision: 17-Aug-10
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
20
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ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
Maximum I2t for fusing
I2t
A
90
°C
175
t = 10 ms
No voltage
reapplied
2700
100 % VRRM
reapplied
2270
t = 8.3 ms
t = 10 ms
t = 10 ms
I2t
UNITS
110
DC at 85 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
2830
Sinusoidal half wave,
initial TJ = TJ maximum
2380
36.4
t = 8.3 ms
No voltage
reapplied
t = 10 ms
100 % VRRM
25.8
t = 8.3 ms
reapplied
23.5
33.2
t = 0.1 to 10 ms, no voltage reapplied
364
Low level value of threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.90
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
0.92
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
1.79
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
1.81
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.52
Maximum on-state voltage
VTM
Maximum holding current
IH
Typical latching current
IL
600
TJ = 25 °C, anode supply 12 V resistive load
A
1000
kA2s
kA2s
V
m
V
mA
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
VALUES
UNITS
Gate drive 20 V, 20 , tr  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
TEST CONDITIONS
500
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
2.0
Typical turn-off time
tq
ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
20
mA
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Document Number: 94393
Revision: 17-Aug-10
ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
PGM
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
TEST CONDITIONS
IGT
5
TJ = TJ maximum, f = 50 Hz, d% = 50
1
TJ = 25 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
IGD
TJ = TJ maximum
DC gate voltage not to trigger
W
A
20
V
5.0
TJ = 125 °C
VGT
UNITS
2.0
TJ = TJ maximum, tp  5 ms
TJ = - 40 °C
DC gate voltage required to trigger
MAX.
TJ = TJ maximum, tp  5 ms
TJ = - 40 °C
DC gate current required to trigger
VALUES
TYP.
VGD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.195
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
Mounting torque, ± 10 %
K/W
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
Document Number: 94393
Revision: 17-Aug-10
°C
See dimensions - link at the end of datasheet
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15.5 (137)
14 (120)
Nm
(lbf · in)
130
g
TO-209AC (TO-94)
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ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.035
0.025
120°
0.041
0.042
90°
0.052
0.056
60°
0.076
0.079
30°
0.126
0.127
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
130
ST110S Series
RthJC (DC) = 0.195 K/W
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Angle
100
90
30°
60°
90°
120°
180°
80
0
20
40
60
80
100
120
ST110S Series
RthJC (DC) = 1.95 K/W
120
110
Conduction Period
30°
100
60°
90
90°
120°
180°
80
0
20
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
e lt
-D
K/
W
W
K/
.1
=0
RMS Limit
SA
R th
0.
6
W
K/
100
K/
W
K/
W
W
K/
120
0.
4
0.
5
2
0.
180°
120°
90°
60°
30°
140
3
0.
0.8
a
K/
W
1K
/W
80
60
Conduction Angle
R
Maximum Average On-state Power Loss (W)
Fig. 1 - Current Ratings Characteristics
160
DC
40 60 80 100 120 140 160 180
1.2
K/ W
40
ST110S Series
TJ = 125°C
20
0
0
20
40
60
80
100
Average On-state Current (A)
120
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
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Document Number: 94393
Revision: 17-Aug-10
ST110SPbF Series
Vishay Semiconductors
220
1
0.
K/
W
W
K/
0.4
100 RMS Limit
80
Conduction Period
60
K/
W
0.5
K/
W
0.6
K/
W
0.8
K/ W
1K
/W
R
120
ta
el
-D
140
0.
3
=
160
W
K/
180
A
hS
R t
DC
180°
120°
90°
60°
30°
200
2
0.
Maximum Average On-state Power Loss (W)
Phase Control Thyristors
(Stud Version), 110 A
1.2
K/ W
40
ST110S Series
TJ = 125°C
20
0
0
20 40
60 80 100 120 140 160 180
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2200
2000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
2400
1800
1600
1400
1200
ST110S Series
1000
1
10
100
2800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
2400
Initial TJ = 125°C
No Voltage Reapplied
2200
Rated VRRM Reapplied
2600
2000
1800
1600
1400
1200
ST110S Series
1000
0.01
0.1
1
10
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
1000
Tj = 25˚C
100
Tj = 125˚C
ST110S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Document Number: 94393
Revision: 17-Aug-10
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ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Transient Thermal Impedance Z
thJC (K/W)
Vishay Semiconductors
1
Steady State Value
R thJC = 0.195 K/W
(DC Operation)
0.1
0.01
ST110S Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
VGD
IGD
0.1
0.001
0.01
Tj=25 °C
1
Tj=-40 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(1)
(3) (4)
Frequency Limited by PG(AV)
Device: ST110S Series
0.1
(2)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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Document Number: 94393
Revision: 17-Aug-10
ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
ST
11
0
S
16
P
0
V
L
PbF
1
2
3
4
5
6
7
8
9
10
1
-
Thyristor
2
-
Essential part marking
3
-
0 = Converter grade
4
-
S = Compression bonding stud
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
P = Stud base 20UNF threads
7
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (for cathode and gate terminals)
8
-
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
9
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
10
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 94393
Revision: 17-Aug-10
www.vishay.com/doc?95078
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Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST110S Series
DIMENSIONS in millimeters (inches)
Glass metal seal
37
)M
IN
.
2.6 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
2
C.S. 16 mm
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
215 ± 10
(8.46 ± 0.39)
Fast-on terminals
Red shrink
70 (2.75)
MIN.
White shrink
AMP. 280000-1
REF-250
Ø 23.5 (0.93) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95078
Revision: 23-Sep-08
For technical questions, contact: [email protected]
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Outline Dimensions
TO-209AC (TO-94) for ST110S Series
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Ceramic housing
37
)M
IN
.
2.6 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
Red shrink
70 (2.75)
MIN.
215 ± 10
(8.46 ± 0.39)
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
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For technical questions, contact: [email protected]
Document Number: 95078
Revision: 23-Sep-08
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Document Number: 91000
Revision: 11-Mar-11
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