ST1200C..KP Series Vishay High Power Products Phase Control Thyristors (Stud Version), 1650 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK A-24 (K-PUK) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 1650 A • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths VALUES UNITS 1650 A 55 °C 3080 A 25 °C 50 Hz 30 500 60 Hz 32 000 50 Hz 4651 60 Hz 4250 A ITSM I2t VDRM/VRRM Typical tq TJ kA2s 1200 to 2000 V 200 μs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST1200C..K VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 Document Number: 94394 Revision: 23-Apr-10 For technical questions, contact: [email protected] IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 100 www.vishay.com 1 ST1200C..KP Series Vishay High Power Products Phase Control Thyristors (Stud Version), 1650 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms I2√t UNITS A 55 (85) °C 3080 30 500 No voltage reapplied 32 000 100 % VRRM reapplied 26 900 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 4651 4250 3300 3000 t = 0.1 ms to 10 ms, no voltage reapplied 46 510 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.01 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.21 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.19 Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 Maximum on-state voltage VTM Maximum holding current IH Typical latching current IL A 25 700 100 % VRRM reapplied t = 8.3 ms Maximum I2√t for fusing VALUES 1650 (700) 600 TJ = 25 °C, anode supply 12 V resistive load 1000 kA2s kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs 200 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94394 Revision: 23-Apr-10 ST1200C..KP Series Phase Control Thyristors (Stud Version), 1650 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp ≤ 5 ms 16 TJ = TJ maximum, f = 50 Hz, d% = 50 3 TJ = 25 °C TJ = 125 °C TJ = 25 °C VGT TJ = 125 °C IGD TJ = TJ maximum DC gate voltage not to trigger A 20 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = - 40 °C DC gate current not to trigger W V 5.0 IGT DC gate voltage required to trigger UNITS 3.0 TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate current required to trigger MAX. VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 200 - 100 200 50 - 1.4 - 1.1 3.0 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.0.42 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled K/W 0.003 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 24 500 (2500) N (kg) 425 g A-24 (K-PUK) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94394 Revision: 23-Apr-10 For technical questions, contact: [email protected] www.vishay.com 3 ST1200C..KP Series ST1200C..K Series (Single Side Cooled) RthJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 30° 60° 70 90° 60 120° 180° 50 40 0 200 400 600 800 1000 1200 130 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Period 80 70 60 50 30° 60° 90° 40 30 20 120° 180° 0 600 1200 DC 1800 2400 3000 3600 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 80 Conduction Period 70 60 30° 50 60° 90° 120° 180° 40 30 20 0 400 800 1200 DC 1600 2000 Maximum Allowable Heatsink Temperature (°C) Average On-state Current (A) 4000 180° 120° 90° 60° 30° RMS Limit 3500 3000 2500 2000 1500 1000 Conduction Angle 500 ST1200C..K Series T J = 125°C 0 0 400 800 1200 1600 2000 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 130 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Angle 80 70 30° 60 60° 50 90° 40 30 0 400 800 1200 120° 180° 1600 2000 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 Maximum Allowable Heatsink Temperature (°C) Phase Control Thyristors (Stud Version), 1650 A Vishay High Power Products 5000 DC 180° 120° 90° 60° 30° 4000 3000 RMS Limit 2000 Conduction Period 1000 0 ST1200C..K Series TJ = 125°C 0 600 1200 1800 2400 3000 3600 Average On-state Current (A) Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94394 Revision: 23-Apr-10 ST1200C..KP Series 28000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors (Stud Version), 1650 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 26000 24000 22000 20000 18000 16000 ST1200C..K Series 14000 12000 1 10 100 Vishay High Power Products 32000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C 28000 No Voltage Reapplied 26000 Rated VRRM Reapplied 30000 24000 22000 20000 18000 16000 14000 ST1200C..K Series 12000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 1000 TJ = 25°C TJ = 125°C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 0.01 Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation) 0.001 0.001 ST1200C..K Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94394 Revision: 23-Apr-10 For technical questions, contact: [email protected] www.vishay.com 5 ST1200C..KP Series Phase Control Thyristors (Stud Version), 1650 A Vishay High Power Products 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (a) (b) VGD Tj=-40 °C Tj=25 °C 1 Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) IGD Device: ST1200C..K Series 0.1 0.001 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 120 0 C 20 K 1 - P 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 5 - Voltage code: Code x 100 = VRRM (see Voltage Ratings table) 6 - K = PUK case A-24 (K-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 - Critical dV/dt: 9 - P = Lead (Pb)-free None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 www.vishay.com/doc?95081 For technical questions, contact: [email protected] Document Number: 94394 Revision: 23-Apr-10 Outline Dimensions Vishay Semiconductors A-24 (K-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 28.88 (1.137) minimum Strike distance: 17.99 (0.708) minimum 1 (0.04) MIN. 2 places 47.5 (1.87) DIA. MAX. 2 places Pin receptable AMP. 60598-1 27.5 (1.08) MAX. 67 (2.6) DIA. MAX. 20° ± 5° 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM. 44 (1.73) 2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95081 Revision: 02-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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