VISHAY S268P

S268P
Vishay Telefunken
Silicon PIN Photodiode Array
Description
S268P is a silicon PIN photodiode array in a inline configuration.
Three single photodiode chips with a common cathode
are mounted in a waterclear 8 pin dual in line package.
Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
Features
D
D
D
D
D
D
D
Three photodiodes with common cathode
Fast response times
Small junction capacitance
94 8684
High photo sensitivity
Large radiant sensitive area (A = 3 x 7.5 mm2)
Wide angle of half sensitivity ϕ = ± 65°
Suitable for visible and near infrared radiation
Applications
High speed and high sensitive PIN photodiode array for industrial applications, measuring and control
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81538
Rev. 2, 20-May-99
Test Conditions
Tamb
x
x 25 °C
t
3 s, mounted on
plated, printed board
Symbol
VR
PV
Tj
Tstg
Tsd
Value
60
215
100
–55...+100
260
Unit
V
mW
°C
°C
°C
RthJA
350
K/W
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S268P
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
IR = 100 mA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2
Ee = 1 mW/cm2
EA = 1 klx
Ee = 1 mW/cm2, l = 950 nm
EA = 1 mW/cm2,
l = 950 nm
EA = 1 klx, VR = 5 V
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light
g Current
Symbol
V(BR)
Iro
CD
CD
Vo
TKVo
Ik
Ik
TKIk
Min
60
Ira
Ira
Reverse Light Current Ratio of
Two Diodes
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
VR = 10 V, l = 950 nm
Rise Time
VR = 10 V, RL = 1 kW,
l = 820 nm
Fall Time
VR = 10 V, RL = 1 kW,
l = 820 nm
Typ
Max
2
70
25
350
–2.6
70
47
0.1
30
40
Unit
V
nA
pF
pF
mV
mV/K
mA
mA
%/K
mA
mA
75
50
40
1:1.2
ϕ
NEP
tr
±65
900
600...1050
4x10–14
100
deg
nm
nm
W/√ Hz
ns
tf
100
ns
lp
l0.5
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1.4
I ra rel – Relative Reverse Light Current
I ro – Reverse Dark Current ( nA )
1000
100
10
VR=10V
l=950nm
1.0
0.8
1
0.6
20
94 8403
VR=5V
1.2
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
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0
94 8416
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
Document Number 81538
Rev. 2, 20-May-99
S268P
Vishay Telefunken
80
CD – Diode Capacitance ( pF )
Ira – Reverse Light Current ( m A )
1000
100
10
VR=5V
l=950nm
1
0.1
0.01
1
100
10
VR=5V
1
102
103
0.1
1
1.0
0.8
0.6
0.4
0.2
0
350
104
EA – Illuminance ( lx )
550
750
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0°
10
°
20
°
30°
1 mW/cm2
S rel – Relative Sensitivity
Ira – Reverse Light Current ( m A )
100
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
l=950nm
1
0.1
94 8419
1150
950
l – Wavelength ( nm )
94 8420
Figure 4. Reverse Light Current vs. Illuminance
100
10
VR – Reverse Voltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
S ( l ) rel – Relative Spectral Sensitivity
Ira – Reverse Light Current ( m A )
20
94 8407
1000
94 8418
40
10
Figure 3. Reverse Light Current vs. Irradiance
0.1
101
60
0
0.1
Ee – Irradiance ( mW / cm2 )
94 8417
E=0
f=1MHz
1
10
100
VR – Reverse Voltage ( V )
Figure 5. Reverse Light Current vs. Reverse Voltage
Document Number 81538
Rev. 2, 20-May-99
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8406
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
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S268P
Vishay Telefunken
n.c.
C
C
C
8
7
6
5
D2
D3
94 8683
D1
1
2
3
4
C
AD1
AD2
AD3
Dimensions in mm
96 12185
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Document Number 81538
Rev. 2, 20-May-99
S268P
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81538
Rev. 2, 20-May-99
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