VISHAY S350P

S350P
Vishay Telefunken
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat window.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with lp > 850nm.
Features
D
D
D
D
D
High radiant sensitivity
94 8640
Miniature T–¾ flat plastic package with IR filter
Very wide angle of half sensitivity ϕ = ± 40°
Suitable for near infrared radiation
Suitable for 0.1” (2.54 mm) center–to–center
spacing
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81543
Rev. 2, 20-May-99
Test Conditions
x
tp/T = 0.5, tp
10 ms
Tamb
55 °C
x
t
x3s
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
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S350P
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Test Conditions
IC = 1 mA
Symbol
V(BR)CE
Min
32
Typ
Max
Unit
V
2
6
1
200
nA
pF
mA
O
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E=0
Ee = 1 mW/cm2,
l = 950 nm, VCE = 5 V
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Ee = 1 mW/cm2,
Voltage
l = 950 nm, IC = 0.1 mA
Turn–On Time
VS = 5 V, IC = 5 mA,
RL = 100 W
Turn–Off Time
VS = 5 V, IC = 5 mA,
RL = 100 W
Cut–Off Frequency
VS = 5 V, IC = 5 mA,
RL = 100 W
ICEO
CCEO
Ica
0.2
ϕ
lp
l0.5
VCEsat
±40
925
860...990
ton
6
ms
toff
5
ms
fc
110
kHz
0.3
deg
nm
nm
V
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104
I CEO – Collector Dark Current ( nA )
P tot – Total Power Dissipation ( mW )
125
100
75
RthJA
50
25
VCE=20V
102
101
100
0
0
94 8308
103
20
40
60
80
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
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100
20
94 8260
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
Document Number 81543
Rev. 2, 20-May-99
S350P
C CEO – Collector Emitter Capacitance ( pF )
Vishay Telefunken
I ca rel – Relative Collector Current
2.0
1.8
VCE=5V
Ee=1mW/cm2
l=950nm
1.6
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
1
0.1
VCE=5V
l=950nm
0
0.1
mW / cm2
)
100
10
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
VCE=5V
RL=100W
l=950nm
10
8
6
ton
4
toff
2
Ee=1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.1
1
10
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Document Number 81543
Rev. 2, 20-May-99
8
12
16
IC – Collector Current ( mA )
1.0
0.8
0.6
0.4
0.2
0
700
0.01
0.1
4
Figure 7. Turn On/Turn Off Time vs. Collector Current
S ( l ) rel – Relative Spectral Sensitivity
l=950nm
1
0
94 8253
10
94 8256
1
VCE – Collector Emitter Voltage ( V )
10
1
Figure 4. Collector Light Current vs. Irradiance
Ica – Collector Light Current ( mA )
4
0
0.1
Ee – Irradiance (
94 8255
8
t on / t off – Turn on / Turn off Time ( m s )
Ica – Collector Light Current ( mA )
10
0.001
0.01
12
94 8247
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
f=1MHz
16
100
Tamb – Ambient Temperature ( °C )
94 8239
20
100
94 8261
800
900
1000
1100
l – Wavelength ( nm )
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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S350P
Vishay Telefunken
S rel – Relative Sensitivity
0°
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8257
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
96 12188
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Document Number 81543
Rev. 2, 20-May-99
S350P
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81543
Rev. 2, 20-May-99
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