BPV22F Vishay Telefunken Silicon PIN Photodiode Description BPV22F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter,spectrally matched to GaAs or GaAs/GaAlAs IR emitters (l p = 950 nm). Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without compromising the viewing angle. In comparison with flat packages the spherical lens package achieves a sensitivity improvement of 80%. Features D D D D D D 94 8633 Large radiant sensitive area (A=7.5 mm2) Wide viewing angle ϕ = ± 60 ° Improved sensitivity Fast response times Plastic package with IR filter Filter designed for 950 nm transmission Applications Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...– or TSI...–Series). Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81508 Rev. 2, 20-May-99 Test Conditions Tamb t x 25 °C x5s Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 60 215 100 –55...+100 –55...+100 260 350 Unit V mW °C °C °C °C K/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) BPV22F Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Serial Resistance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Reverse Light Current Temp. Coefficient of Ira Absolute Spectral Sensitivity y Test Conditions IF = 50 mA IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 12 V, f = 1 MHz Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Ee = 1 mW/cm2, l = 950 nm, VR = 10 V VR = 5 V, l = 870 nm VR = 5 V, l = 950 nm Symbol VF V(BR) Iro CD RS Vo TKVo Ik Ira TKIra Min Typ 1 Max 1.3 2 70 400 370 –2.6 75 80 30 60 55 Unit V V nA pF W mV mV/K mA mA 0.1 %/K NEP D* 0.35 0.6 ±60 950 870...1050 90 4 x 10–14 6x1012 s(l) s(l) ϕ Rise Time l = 820 nm VR = 10 V, RL = 1k W, tr 100 A/W A/W deg nm nm % W/√ Hz cm√Hz/ W ns Fall Time l = 820 nm VR = 10 V, RL = 1k W, tf 100 ns Cut–Off Frequency l = 870 nm VR = 12 V, RL = 1k W, fc 4 MHz l = 950 nm VR = 12 V, RL = 1k W, fc 1 MHz Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency l = 950 nm Noise Equivalent Power VR = 10 V, l = 950 nm Detectivity VR = 10 V, l = 950 nm www.vishay.de • FaxBack +1-408-970-5600 2 (5) lp l0.5 h Document Number 81508 Rev. 2, 20-May-99 BPV22F Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 100 Ira – Reverse Light Current ( m A ) I ro – Reverse Dark Current ( nA ) 1000 100 10 VR=10V 1 20 40 60 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 0.1 1 10 100 VR – Reverse Voltage ( V ) 94 8412 Figure 4. Reverse Light Current vs. Reverse Voltage 80 CD – Diode Capacitance ( pF ) 1.4 I ra rel – Relative Reverse Light Current 0.2 mW/cm2 10 100 80 Tamb – Ambient Temperature ( °C ) Figure 1. Reverse Dark Current vs. Ambient Temperature VR=5V l=950nm 1.2 1.0 0.8 0.6 E=0 f=1MHz 60 40 20 0 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 94 8409 100 10 VR=5V l=950nm 0.1 0.01 0.1 Ee – Irradiance ( mW / cm2 ) Figure 3. Reverse Light Current vs. Irradiance Document Number 81508 Rev. 2, 20-May-99 100 10 1.2 1.0 0.8 0.6 0.4 0.2 0 750 10 1 1 VR – Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage S ( l ) rel – Relative Spectral Sensitivity 1000 1 0.1 94 8407 Figure 2. Relative Reverse Light Current vs. Ambient Temperature Ira – Reverse Light Current ( m A ) 0.5 mW/cm2 l=950nm 1 94 8403 94 8411 1 mW/cm2 94 8408 850 950 1050 1150 l – Wavelength ( nm ) Figure 6. Relative Spectral Sensitivity vs. Wavelength www.vishay.de • FaxBack +1-408-970-5600 3 (5) BPV22F Vishay Telefunken S rel – Relative Sensitivity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8413 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Dimensions in mm 95 11475 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81508 Rev. 2, 20-May-99 BPV22F Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81508 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)