TESP5700 Vishay Semiconductors Silicon PIN Photodiode Description TESP5700 PIN photodiode is applicable to high speed data transmission specifically at low reverse voltage. Black epoxy package include side view lens and daylight filter, matched to high speed IR emitters. Features • • • • 16936 Ultra high speed at low supply voltage Fast response times tr/tf = 10 ns High cut-off frequency fc = 35 MHz Low operating voltage VR = 2 V • • • • • High sensitivity s(λ) = 0.57 A/W Low junction capacitance High efficient side view lens Wide viewing angle ϕ = ± 60 ° Daylight filter, matched to IR emitters using λp = 850 nm or λp = 870 nm • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High speed data transmission specifically using low supply voltage Infrared remote control and free air data transmission systems in combination with IR emitters TSFF5200 or TSFF5400. Parts Table Part Ordering code TESP5700 Remarks TESP5700 MOQ 7500 pc Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Power Dissipation Tamb ≤ 25 °C Junction Temperature Symbol Value VR 60 Unit V PV 215 mW Tj 100 °C Operating Temperature Range Tamb - 40 to + 100 °C Storage Temperature Range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 350 K/W Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81573 Rev. 1.4, 08-Mar-05 t≤5s www.vishay.com 1 TESP5700 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward Voltage IF = 50 mA Breakdown Voltage IR = 100 µA, E = 0 Symbol Min VF V(BR) Typ. Max 0.9 1.3 60 Unit V V Reverse Dark Current VR = 10 V, E = 0 Iro 1 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 17 Serial Resistance VR = 2 V, f = 1 MHz RS 40 Ω Open Circuit Voltage Ee = 1 mW/cm2, λ = 870 nm Vo 430 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, λ = 870 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , λ = 870 nm Ik 23 µA λ = 870 nm, Ira 25 µA 2 16 10 nA pF Reverse Light Current Ee = 1 VR = 2 V Temp. Coefficient of Ira Ee = 1 mW/cm2, λ = 870 nm, VR = 2 V TKIra 0.13 %/K Absolute Spectral Sensitivity VR = 2 V, λ = 870 nm s(λ) 0.57 A/W VR = 5 V, λ = 950 nm s(λ) 0.37 A/W Angle of Half Sensitivity ϕ ± 60 deg Wavelength of Peak Sensitivity λp 870 nm λ0.5 790 to 980 nm ns mW/cm2, Range of Spectral Bandwidth Rise Time VR = 2 V, RL = 50 Ω, λ = 870 nm tr 10 Fall Time VR = 2 V, RL = 50 Ω, λ = 870 nm tf 10 ns Cut-Off Frequency VR = 2 V, RL = 50 Ω, λ = 870 nm fc 35 MHz Typical Characteristics (Tamb = 25 °C unless otherwise specified) I ra rel - Relative Reverse Light Current I ro – Reverse Dark Current ( nA ) 1000 100 10 VR = 10 V 1 20 16931 40 60 80 100 Tamb – Ambient Temperature ( qC ) Figure 1. Reverse Dark Current vs. Ambient Temperature www.vishay.com 2 1.4 VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 94 8409 20 40 60 80 100 Tamb - Ambient Temperature ( ° C ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature Document Number 81573 Rev. 1.4, 08-Mar-05 TESP5700 Vishay Semiconductors 100 10 VR = 2 V = 870 nm 1 0.1 0.01 0.1 1.0 0.8 0.6 0.4 0.2 0.0 750 10 1 Ee – Irradiance ( mW/cm2 ) 16932 1.2 S ( ) rel – Relative Spectral Sensitivity I ra – Reverse Light Current ( A ) 1000 850 950 1150 Figure 6. Relative Spectral Sensitivity vs. Wavelength Figure 3. Reverse Light Current vs. Irradiance 0° 100 10 ° 20 ° 30° = 870 nm S rel - Relative Sensitivity I ra – Reverse Light Current ( A ) 1050 – Wavelength ( nm ) 16935 1 mW/cm2 10 0.1 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1 0.1 1 10 100 VR – Reverse Voltage ( V ) 16933 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8413 Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs. Angular Displacement CD – Diode Capacitance ( pF ) 40 35 E=0 f = 1 MHz 30 25 20 15 10 5 0 0.1 16934 1.0 10.0 100.0 VR – Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 81573 Rev. 1.4, 08-Mar-05 www.vishay.com 3 TESP5700 Vishay Semiconductors Package Dimensions in mm 95 11475 www.vishay.com 4 Document Number 81573 Rev. 1.4, 08-Mar-05 TESP5700 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81573 Rev. 1.4, 08-Mar-05 www.vishay.com 5