BC807.../BC808... PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking BC807-16 5As 1=B 2=E 3=C - - - SOT23 BC807-16W 5As 1=B 2=E 3=C - - - SOT323 BC807-25 5Bs 1=B 2=E 3=C - - - SOT23 BC807-25W 5Bs 1=B 2=E 3=C - - - SOT323 BC807-40 5Cs 1=B 2=E 3=C - - - SOT23 BC807-40W 5Cs 1=B 2=E 3=C - - - SOT323 BC808-25 5Fs 1=B 2=E 3=C - - - SOT23 BC808-25W 5Fs 1=B 2=E 3=C - - - SOT323 BC808-40 5Gs 1=B 2=E 3=C - - - SOT23 BC808-40W 5Gs 1=B 2=E 3=C - - - SOT323 1Pb-containing Pin Configuration Package package may be available upon special request 1 2007-06-08 BC807.../BC808... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC807... 45 BC808... 25 Collector-base voltage VCBO BC807... 50 BC808... 30 5 Emitter-base voltage VEBO Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 500 mW 330 TS ≤ 130 °C BC807W, BC808W 250 Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS mA 1000 TS ≤ 79 °C BC807, BC808 150 °C -65 ... 150 Value BC807, BC808 ≤ 215 BC807W, BC808W ≤ 80 1For Unit Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-06-08 BC807.../BC808... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC807... 45 - - IC = 10 mA, IB = 0 , BC808... 25 - - IC = 10 µA, IE = 0 , BC807... 50 - - IC = 10 µA, IE = 0 , BC808... 30 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 °C - - 50 - - 100 Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain1) - h FE IC = 100 mA, V CE = 1 V, h FE-grp. 16 IC = 100 mA, V CE = 1 V, h FE-grp. 25 100 160 250 160 250 400 IC = 100 mA, V CE = 1 V, h FE grp. 40 IC = 500 mA, V CE = 1 V 250 350 630 40 - - VCEsat - - 0.7 VBEsat - - 1.2 Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1Pulse test: t < 300µs; D < 2% 3 2007-06-08 BC807.../BC808... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 200 - MHz Ccb - 8 - pF Ceb - 60 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 4 2007-06-08 BC807.../BC808... DC current gain hFE = ƒ(IC) VCE = 1 V DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp. 16 h FE-grp. 25 h FE 10 3 hFE 10 3 10 2 10 2 105 °C 85 °C 65 °C 25 °C -40 °C 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 1 -5 10 0 A 10 10 -4 10 -3 10 -2 10 IC -1 0 A 10 IC DC current gain hFE = ƒ(IC) VCE = 1 V Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 h FE-grp. 40 10 3 EHP00215 10 3 ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 hFE 5 10 2 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 5 10 0 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 A 10 10 -1 0 IC 0 0.2 0.4 0.6 V 0.8 V CEsat 5 2007-06-08 BC807.../BC808... Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 ΙC mA 10 Ι CBO 150 ˚C 25 ˚C -50 ˚C 2 EHP00213 10 5 EHP00214 10 3 nA 10 4 5 max 10 3 10 1 5 typ 10 2 10 0 10 1 5 10 -1 0 1.0 2.0 3.0 V 10 0 4.0 0 50 100 V BEsat Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 65 pF MHz 5 55 CCB/CEB fT TA EHP00210 10 3 150 ˚C 50 45 40 35 10 2 30 25 5 20 CEB 15 10 CCB 5 10 1 10 0 10 1 10 2 mA 0 0 10 3 ΙC 2 4 6 8 10 12 14 16 V 20 VCB/VEB 6 2007-06-08 BC807.../BC808... Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BC807, BC808 BC807W, BC808W 360 300 mW 300 250 270 225 P tot P tot mW 240 200 210 175 180 150 150 125 120 100 90 75 60 50 30 25 0 0 15 30 45 60 90 105 120 °C 75 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Permissible Pulse Load RthJS = ƒ(tp ) BC807, BC808 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC807, BC808 10 3 10 4 Ptotmax /PtotDC - RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 3 10 -5 10 -4 10 -3 10 -2 s 10 1 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 2007-06-08 BC807.../BC808... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BC807W, BC808W Ptotmax/P totDC = ƒ(tp) BC807W, BC808W 10 3 10 3 P totmax/P totDC K/W RtthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 8 2007-06-08 Package SOT23 BC807.../BC808... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 9 2007-06-08 Package SOT323 BC807.../BC808... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 10 2007-06-08 BC807.../BC808... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2007-06-08