These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1” inch matrix. • Very compact 8-element arrays with a double row of leads on an 0.1” matrix. • End stackable. • No dust traps to reduce opto performance. • Smooth black polycarbonate housing transmits infrared but reduces daylight influence. MECHANICAL 7.0 20.2 +0.0/-0.2 6.0 3.5 LEADS 0.5 SQUARE 7 x 2.54 = 17.78 2.54 1.21 PIPS IDENTIFY NEGATIVE LEADS ORDERING INFORMATION FLAT LENS PHOTOTRANSISTOR=SSA005-2A DOME LENS PHOTOTRANSISTIR=SSA005-2B FLAT LENS INFRARED EMITTER=SSA005-2C DOME LENS INFRARED EMITTER=SSA005-2D PLEASE NOTE CAN BE SUPPLIED IN LESS THAN 8 WAY VERSIONS ON REQUEST WITH COUPLED PAIR SPECIFICATION. BEDFORD OPTO TECHNOLOGY LTD 1,BIGGAR BUSINESS PARK, BIGGAR, LANARKSHIRE,ML12 6NR Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009 Website: bot.co.uk E-mail: [email protected] ISS C 23.8.07 SOLDERING TEMPERATURE (3secs max 2mm from body) ALL TYPES 260 OC max SSA-005-2 INFRARED DIODES IR-Emitting Diodes in Miniature (T-3/4) Package PARAMETER SYMBOL VALUE ϕ +55° Peak Wavelength λp 950nm Power Dissipation Pv 170mW RthJA 450K/W IF 100mA Viewing Angle CONDITIONS CQY 36N CQY 37N Thermal Resistance Junction/Ambient Forward Current Rise Time IF=1.5A, tp/T=0.01, tp<10μs Tr 400ns Fall Time IF=1.5A, tp/T=0.01, tp<10μs Tf 450ns Tj 100°C Tstg -25…+100°C IF=50mA, tp<20ns Ie Min = 0.7mW/sr Typ = 1.5mW/sr Min = 2.2mW/sr CONDITIONS SYMBOL VALUE ϕ +40° λp 825nm RthJA 450K/W IF 100mA Junction Temperature Storage Temperature Range Radiant Intensity CQY 36N CQY 37N PARAMETER Viewing Angle BPW 16N BPW 17N Peak Wavelength Thermal Resistance Junction/Ambient Forward Current Rise Time Vs=5V, Ic=5mA, RL=100Ω Tr 4.8μs Fall Time Vs=5V, Ic=5mA, RL=100Ω Tf 5.0μs Tj 100°C Tstg -55…+100°C Ica Min = 0.07mA Typ = 0.14mA Min = 0.5mA VCEO 32V ICEO Typ = 1nA Junction Temperature Storage Temperature Range Collector Light Current BPW 16N Ee=1mW/cm , λ=950nm, Vce=5V 2 BPW 17N Collector Emitter Voltage Collector Dark Current VCE = 20V, E = 0 BEDFORD OPTO TECHNOLOGY LTD 1BIGGAR BUSINESS PARK, BIGGAR,LANARKSHIRE, ML12 6NR Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009 Website: bot.co.uk E-mail: [email protected] ISS C 23.8.07 PHOTO DETECTORS Silicon -NPN - Phototransistors