OPB 740 Series Reflective Object Sensors Description The OPB740 through OPB744 series of reflective object sensors each consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on converging optical axes in an black plastic housing. Various options include choice of no windows, blue polysulfone windows for dust protection or opaque windows with offset openings for improved resolution. Available with wires as OPB740W / OPB744W series. The OPB 745 reflective object sensor consists of an infrared emitting diode and an NPN silicon photodarlington . OPB 740 OPB 741 OPB 742 OPB 743 OPB 744 OPB 745 = = = = = = NO WINDOWS BLUE WINDOWS OFFSET WINDOWS NO WINDOWS BLUE WINDOWS OFFSET WINDOWS MECHANICAL DATA 15.1+/-0.1 3.9 3.1 5.0 +/-0.1 3.18 1.52 R1.52 A 2.54 K REFLECTIVE SURFACE 17.8 +/-0.1 5 E 9.5 C 3.81 NOM 0.5 SQ NOM OPB740 OPB743 OPB741 OPB744 OPB742 WIRE CONNECTION ORANGE ANODE GREEN CATHODE STANDARD WIRES 100mm LONG 26 AWG WHITE COLLECTOR BLUE EMITTER NOTES 1 RMA Flux is recommended. Duration can be extended to 10sec. max. when flow soldering. 2 Derate Linearly 1.82mW/oC above 26oC 3 d is distance from the assembly face to the reflective surface. 4 Reflective surface is Eastam Kodak neutral white test card with 90% diffuse reflectance as a reflective surface. 5 Crosstalk is the photocurrent measured with current to the input diode & no reflecting surface 6 All parameters tested using pulse technique. BEDFORD OPTO TECHNOLOGY LTD 1,BIGGAR BUSINESS PARK, BIGGAR, ML12 6FX Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009 Website: bot.co.uk E-mail: [email protected] Iss B 10.4.03 ABSOLUTE MAXIMUM RATINGS (25oC unless otherwise noted) INPUT DIODE FORWARD DC CURRENT REVERSE DC VOLTAGE POWER DISSIPATION 40mA 2.0V 100mW (2) OUTPUT SENSOR COLLECTOR-EMITTER VOLTAGE EMITTER-COLLECTOR VOLTAGE POWER DISSIPATION 30V 5.0V 100mW (2) OUTPUT PHOTODARLINGTON COLLECTOR-EMITTER VOLTAGE EMITTER-COLLECTOR VOLTAGE POWER DISSIPATION 15.0V 5.0V 100mW (2) OPB 740 SERIES OPERATING TEMP -40 C TO +80oC STORAGE TEMP -40 C TO +80oC 240oC (1) LEAD SOLDERING TEMP OPTO ELECTRONIC DATA(Ta=25oC) PARAMETERS SYMBOL MIN MAX UNITS TEST CONDISTIONS INPUT DIODE Forward Voltage VF 1.70 V If = 40mA Reverse Current IR 100 µA Vr = 2.0V OUTPUT PHOTOTRANSISTOR Collector-Emitter Breakdown V(BR)CEO 30.0 V Ic = 100µA Emitter-Collector Breakdown V(BR)ECO 5.0 V Ie = 100µA nA Vce= 10.0V, If = 0, Ee = 0 µA µA µA Vce=5.0V, If=40mA, d=3.8mm µA nA µA Vce=5V, If=40mA, ICEO Collector-Emitter Dark Current 100 COUPLED CHARACTERISTICS IC(ON) (3)(4) On state Collector Current OPB740/OPB741/W OPB742/W OPB743/OPB744/W 50 10 200 ICX (5) Crosstalk OPB740/OPB741/W OPB742/W OPB743/OPB744/W 10 100 20 Output Photodarlington OPB745. OPB745W Collector-Emitter Breakdown Voltage V(BR)CEO 15.0 V Ic = 100µA Emitter-Collector Breakdown Voltage V(BR)ECO 5.0 V Ie = 100µA nA Vce =10V, If = 0, Ee = 0 mA Vce=5.0V, If=40mA, d=3.8mm nA Vcc=5V, If=40mA ICEO Collector Dark Current 250 On-state Collector Current Crosstalk IC(ON) (3)(4) ICX (5) 1.00 250 BEDFORD OPTO TECHNOLOGY LTD 1BIGGAR BUSINESS PARK, BIGGAR, ML12 6FX Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009 Website: bot.co.uk E-mail: [email protected] Iss B 10.4.03 COUPLED