® FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. • • • • • • 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ G! G DS TO-220 TO-220F GD S FQP Series ● ● FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQP90N10V2 - Continuous (TC = 100°C) IDM Drain Current - Pulsed FQPF90N10V2 Units V 90 90 * A 68 68 * A 360 360 * A 100 (Note 1) VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 2430 mJ IAR Avalanche Current (Note 1) 90 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 25 4.5 -55 to +175 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 250 1.67 83 0.55 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2004 Fairchild Semiconductor Corporation FQP90N10V2 0.6 FQPF90N10V2 1.8 Units °C/W Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 QFET Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 100 -- -- V -- 0.1 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 150°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 8.5 10 mΩ -- 72 -- S Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 45 A gFS Forward Transconductance VDS = 40 V, ID = 45 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4730 6150 pF -- 1180 1530 pF -- 300 390 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 90 A, RG = 25 Ω (Note 4, 5) VDS = 80 V, ID = 90 A, VGS = 10 V (Note 4, 5) -- 52 114 ns -- 492 994 ns -- 304 618 ns -- 355 720 ns -- 147 191 nC -- 28 -- nC -- 60 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 90 A ISM -- -- 360 A -- -- 1.4 V VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 90 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 90 A, dIF / dt = 100 A/µs (Note 4) -- 114 -- ns -- 0.54 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 90A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Electrical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 2 10 175°C 25°C ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 -55°C 0 10 Notes : 1. VDS = 40V Notes : 1. 250µs Pulse Test 2. TC = 25° 1 10 2. 250µs Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 2 25 VGS = 10V 20 15 VGS = 20V 10 5 10 1 10 175°C 25°C 0 10 Notes : 1. VGS = 0V 2. 250µs Pulse Test Note : TJ = 25° -1 10 0 0 100 200 300 400 500 0.2 600 0.4 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 11000 12 Ciss = Cgs + Cgd (Cds = shorted) 10000 Coss = Cds + Cgd Crss = Cgd 10 8000 Ciss 7000 6000 Coss 5000 4000 Notes ; 1. VGS = 0 V 3000 Crss 2. f = 1 MHz 2000 1000 VGS, Gate-Source Voltage [V] 9000 Capacitance [pF] 0.6 VDS = 50V VDS = 80V 8 6 4 2 Note : ID = 90A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 0 0 20 40 60 80 100 120 140 160 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 45 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 TJ, Junction Temperature [°C] ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 2 1 ms 10 ms DC 1 10 Notes : 1. TC = 25°C 0 10 150 200 10 µs 2 100 µs 10 1 ms 10 ms DC 1 10 Notes : 1. TC = 25°C 0 10 2. TJ = 175°C 2. TJ = 175°C 3. Single Pulse 3. Single Pulse -1 10 100 Operation in This Area is Limited by R DS(on) 3 10 10 50 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 3 0 TJ, Junction Temperature [°C] Figure 7. Breakdown Voltage Variation vs Temperature 10 -50 -1 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP90N10V2 Figure 9-2. Maximum Safe Operating Area for FQPF90N10V2 100 90 ID, Drain Current [A] 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 TC, Case Temperature [°C] Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Typical Characteristics 10 FQP90N10V2/FQPF90N10V2 Typical Characteristics (Continued) 0 (t), Thermal Response D = 0 .5 10 0 .2 -1 N o te s : 1 . Z θ J C ( t) = 0 .6 ° C / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 0 .1 3 . T J M • T C = P D M * Z θ J C ( t) 0 .0 5 0 .0 2 PDM -2 t1 s in g le p u ls e Z θJC 0 .0 1 10 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-1. Transient Thermal Response Curve for FQP90N10V2 ZθJC(t), Thermal Response 10 0 D = 0 .5 0 .2 N o te s : 1 . Z θ J C (t) = 1 .8 ° C /W M a x. 0 .1 10 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M • T C = P D M * Z θ J C (t) 0 .0 5 -1 0 .0 2 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF90N10V2 ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2004 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Package Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) (1.00x45°) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Note: PKG backside isolation voltage : 4000V Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ActiveArray™ FAST® FASTr™ Bottomless™ FPS™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ EnSigna™ I2C™ i-Lo™ FACT™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I10