SAVANTIC 2SC4916

SavantIC Semiconductor
Product Specification
2SC4916
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High speed ;high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7
A
ICM
Collector current-Peak
14
A
IB
Base current
3.5
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC4916
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
5
UNIT
Emitter-base breakdown voltage
IE=300mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
5
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=1500V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
83
250
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
20
hFE-2
DC current gain
IC=5A ; VCE=5V
3.8
8
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
160
VF
Diode forward voltage
IF=5A
1.3
fT
Transition frequency
IE=0.1A ; VCE=10V
1
V
pF
1.8
3
V
MHz
Switching times resistive load
ts
Storage time
tf
Fall time
ICP=5A;IB1 =1A
IB2=-2A; RL=39B
2
2.0
3.0
µs
0.1
0.2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
2SC4916
SavantIC Semiconductor
Product Specification
2SC4916
Silicon NPN Power Transistors
4