SAVANTIC 2SC3893

SavantIC Semiconductor
Product Specification
2SC3893
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
APPLICATIONS
·Horizontal deflection output for high
resolution display
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1400
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
15
A
IB
Base current
4
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC3893
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.5A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.5A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
66
200
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
12
Transition frequency
IC=0.1A ; VCE=10V
1
3
MHz
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
210
pF
VF
Diode forward voltage
IF=6A
ts
Storage time
tf
Fall time
fT
Resistive load
ICP=6A ;IB1=1.2A;IB2=-2.4A
RL=33.3@
2
5
UNIT
V
2.0
V
2.5
µs
0.2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SC3893