Inchange Semiconductor Product Specification 2SC4764 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High speed ・High voltage ・Low saturation voltage ・Bult-in damper diode APPLICATIONS ・Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current ±6 A ICM Collector current-Peak ±12 A IB Base current 3 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4764 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX 5 UNIT Emitter-base breakdown voltage IE=300mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 83 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=5V 5 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 170 VF Diode forward voltage IF=4A 1.2 fT Transition frequency IC=0.1A ; VCE=10V 1 V 12 9 pF 1.8 3 V MHz Switching times resistive load ts Storage time tf Fall time ICP=4A;IB1=0.8A IB2=-1.6A; RL=51Ω 2 1.6 2.5 μs 0.1 0.2 μs Inchange Semiconductor Product Specification 2SC4764 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC4764 Silicon NPN Power Transistors 4