SAVANTIC 2SC4531

SavantIC Semiconductor
Product Specification
2SC4531
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High voltage,high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-Peak
20
A
IB
Base current
5
A
PC
Total power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC4531
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
5
UNIT
Emitter-base breakdown voltage
IE=200mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=7A; IB=1.7A
5
V
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.7A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
66
200
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
210
VF
Diode forward voltage
IF=7A
1.5
fT
Transition frequency
IC=0.1A ; VCE=10V
1
V
100
pF
1.8
3
V
MHz
Switching times resistive load
ts
Storage time
tf
Fall time
ICP=7A;IB1 =1.4A
IB2 =-2.8A; RL=28.5A
2
1.8
2.5
µs
0.1
0.2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
2SC4531
SavantIC Semiconductor
Product Specification
2SC4531
Silicon NPN Power Transistors
4