SavantIC Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-Peak 20 A IB Base current 5 A PC Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX 5 UNIT Emitter-base breakdown voltage IE=200mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=7A; IB=1.7A 5 V VBEsat Base-emitter saturation voltage IC=7A; IB=1.7A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA hFE DC current gain IC=1A ; VCE=5V 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 210 VF Diode forward voltage IF=7A 1.5 fT Transition frequency IC=0.1A ; VCE=10V 1 V 100 pF 1.8 3 V MHz Switching times resistive load ts Storage time tf Fall time ICP=7A;IB1 =1.4A IB2 =-2.8A; RL=28.5A 2 1.8 2.5 µs 0.1 0.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SC4531 SavantIC Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors 4