Product Specification www.jmnic.com 2SD2101 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON APPLICATIONS ・ Low frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector -emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICP Collector current peak 15 A TC=25℃ 30 W PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD2101 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VEBO Base-emitter voltage IE=50mA; IC=0 7 V VCBO Collector-base voltage IC=0.1mA; IC=0 200 V VCEO Collector-emitter voltage IC=25mA;RBE=∞ 200 V VCEO(sus) Base-emitter voltage IC=5A; L=5mH 170 V VCE(sat)1 Collector-emitter saturation voltage IC=5A ;IB=10mA 1.5 V VCE(sat)2 Collector-emitter saturation voltage IC=10A ;IB=100mA 3.0 V VBE(sat)1 Base-emitter saturation voltage IC=5A ;IB=10mA 2.0 V VBE(sat)2 Base-emitter saturation voltage IC=10A ;IB=100mA 3.5 V ICBO Collector cut-off current VCB=180V; IE=0 10 μA ICEO Collector cut-off current VCE=180V; RBE=∞ 50 μA hFE DC current gain IC=5A ; VCE=3V JMnic 1500 Product Specification www.jmnic.com 2SD2101 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic