JMNIC 2SD2101

Product Specification
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2SD2101
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・DARLINGTON
APPLICATIONS
・ Low frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector -emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICP
Collector current peak
15
A
TC=25℃
30
W
PC
Collector power dissipation
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
2SD2101
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VEBO
Base-emitter voltage
IE=50mA; IC=0
7
V
VCBO
Collector-base voltage
IC=0.1mA; IC=0
200
V
VCEO
Collector-emitter voltage
IC=25mA;RBE=∞
200
V
VCEO(sus)
Base-emitter voltage
IC=5A; L=5mH
170
V
VCE(sat)1
Collector-emitter saturation voltage
IC=5A ;IB=10mA
1.5
V
VCE(sat)2
Collector-emitter saturation voltage
IC=10A ;IB=100mA
3.0
V
VBE(sat)1
Base-emitter saturation voltage
IC=5A ;IB=10mA
2.0
V
VBE(sat)2
Base-emitter saturation voltage
IC=10A ;IB=100mA
3.5
V
ICBO
Collector cut-off current
VCB=180V; IE=0
10
μA
ICEO
Collector cut-off current
VCE=180V; RBE=∞
50
μA
hFE
DC current gain
IC=5A ; VCE=3V
JMnic
1500
Product Specification
www.jmnic.com
2SD2101
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic