JMNIC 2SB511

JMnic
Product Specification
2SB511
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD325
・Low collector saturation voltage
APPLICATIONS
・Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-35
V
VCEO
Collector-emitter voltage
Open base
-35
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-1.5
A
ICM
Collector current -peak
-3.0
A
PC
Collector dissipation
Ta=25℃
1.75
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
JMnic
Product Specification
2SB511
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-1.5A; IB=-0.15A
-1.0
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
40
hFE-2
DC current gain
IC=-0.1A ; VCE=-2V
35
Transition frequency
IC=-0.5A ; VCE=-5V
fT
‹
CONDITIONS
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
MIN
TYP.
MAX
-35
UNIT
V
320
8
MHz
JMnic
Product Specification
2SB511
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3