JMNIC 2SB1640

JMnic
Product Specification
2SB1640
Silicon PNP Power Transistors
DESCRIPTION
・With ITO-220 package
・Low collector saturation voltage
・Complement to type 2SD2525
APPLICATIONS
・Audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
-3
A
-0.5
A
1.8
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB1640
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
-1.5
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-0.75
-1.0
V
ICBO
Collector cut-off current
VCB=-60V ;IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V ;IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
100
hFE-2
DC current gain
IC=-2A ; VCE=-5V
15
fT
Transition frequency
IC=-0.5A ; VCE=-5V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
2
MIN
TYP.
MAX
-60
UNIT
V
320
9
MHz
50
pF
JMnic
Product Specification
2SB1640
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3