JMNIC 2SD1591

Product Specification
www.jmnic.com
2SD1591
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・DARLINGTON
・Complement to type 2SB1100
APPLICATIONS
・Low frequency power amplification
・Low speed power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
VCBO
Collector-base voltage
Open emitter
150
VCEO
Collector-emitter voltage
Open base
100
VEBO
Emitter-base voltage
Open collector
IC
7
V
Collector current (DC)
10
A
ICM
Collector current-Peak
15
A
IB
Base current (DC)
0.5
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
2SD1591
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=25mA
1.5
V
VBEsat
Emitter-base saturation voltage
IC=10A; IB=25mA
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
ICEO
Collector cut-off current
VCE=100V; IE=0
500
μA
IEBO
Emitter cut-off current
VEB=7V ;IC=0
5
mA
hFE
DC current gain
IC=10A ; VCE=2V
JMnic
100
UNIT
1000
V
30000
Product Specification
www.jmnic.com
2SD1591
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic