2H6576
2H6577
2N6578
I
NPN SILICON POWER DARLINGTON
General-purpose
EpiBase
for linear and switching
Replacement
for 2N3055
Popular Voltage
transistors,
suitable
and Driver
Performance
Diode Protection
Can Be Driven from
Operating
darl ington
applications.
High Gain Darlington
Built-In
power
TRANSISTORS
for Reverse Polarity
Low-Level
Protection
Logic
Range
Range – -65
to t200°C
I
Total Power Dissipation
@ Tc = 25°C
—120—
Derate above 25°C
A
Operating and Storage Junction,+~~!{i‘3*<:,*! > TJ ,T~tg
~.,
,.,
‘~:p.!
, ,y,
Temperature Range
THERMAL
Thermal
Maximum
,
CHARAC,@~lS*~CS
~T\:>U...
Character& l&~.s$s”
flesistang~+~~~$ion
Lea@T~~&ature
Purposq#N4 j$~’
~-65
LFA’~l*c
~ _;
&
Watts
0.685
—
to t200
Wloc
STYLEi:
PIN 1. BASE
2. EMITTER
CASE:COLLECTOR
Oc ‘
~
Max
Unit
R~JC
1.46
Oclw
TL
265
to Case
for Soldering
Y
F
J
Q
4
Symbol
!
SEATING
PLANE
H
‘c
B
}rom Case for 10s.
DIM
T
I
‘~~>
MILLIMETERS
I
INCHES
MIN I MAX I MIN MAX
I
I
DAR LINGTON
SCHEMATIC
Collector
~-----
1
CASE 11-03
Base
TO-3
d! it
‘4’
=150’
Lz4
k__
~
J
Emitter
Epi Base is a Trademerk
,...,,,,
of Motorole
Inc.
I.
~MOTOROLAINC., 197a
-- ----
u> 6JD3
(Replaces AD I 327)
*ELECTRICAL
characteristics
I
(TC = 25°c unless otherwise
noted.)
Characteristic
symbol
Min
Max
I
Unit
I
I
OFF CHARACTERISTICS
Collector-Emitter
([c=
Sustaining
200mAdc,
Voltage(l)
IB =0)
VCEO($”s)
Vdc
2N6576
60
1
2N6577
A., fi ---
I I
I
,Lcu
I
v-
Collector
Cutoff
(VCER
= Rated VCEO(Sus)
Collector
Cutoff
VCEX
Value,
RBE = 10,kQ,
TC = 150°C)
Current
= Rated VCEO(Sus)
Collector
I
Current
Cutoff
V’alue, VgE(off)
ICEV
—
ICBO
—
“.”
= 1.5 Vdc)
Current
(VCB = Rated Value)
ON CHARACTERISTICS
DC Current Gain
hFE
{Ic = 15 Adc, VCE = 4.0 Vdc)
1@’!”z’ ‘% ~’
(!C = 10 Adc, VCE = 3.0 Vdc)
Saturation
(IC = 15 Adc, IB=
([c=
Saturation
Voltage
Adc)
15 Adc, lg=0.15Adc)
(IC=
10 Adc, IB=O.I
~,:sv;g~wt)
~.~:>
~<h
,,
~.i.i,
{,~$,,;
~
,Y ‘i{, k:.
\$$\w :
>::. .,tJ.,.
\,,\\?,
VF,
“.’jJ,
, ‘
.+~f&&T<~Q,
.,. .,,
Adc)
Diode Voltage
Drop
(i EC=15Adc)
DYNAMIC
CHARACTERISTICS
Magnitude
of Commo,n-Emitter
Small-Signal
Short-Circuit
LOAD
(Vcc
Storage Time
(Vcc
Fall Time
* Indicates JEDEC
Curre~# Tra#sfer
= 30 Vdc, IC =’10 Ad$;$~~8.1
tp = 300 PS, Dutv
Rise Time
—
4.5
Vdc
—
3.5
—
4.5
Vdc
Ratio
200
—
Adc,
CVCl$a*3~@~+
= 30 Vdc, IC ‘i~~~~’YIBl
= IB2=
0.1 Adc,
tp = 300 ps, DuK$~v’c~&+@ 2.0%)
$i
,i~
..,&$~&:#::’
Registered Data $’
(1) Pulse test: Pulse Width < 30,Q,4/$~&&&
Ihfel
10
td
—
0.15
tr
—
1.0
Ps
t~
—
2.0
Ps
tf
—
7.0
ps
S:’Q{+C),
.:$” ‘ “
~:?>;.\.~?.>,&:*:i?t+
,a,l, s,
,.,,
*t:.
***,,
, , .;,? .,
(Figure 2)
Delay Time
—
.
CHARACTERISTICS
RESISTIVE
Vdc
‘i~,
.\ ‘
(IC = 3.0 Adc, VCE = 3.0 Vdc; f,= 1.0 MHz)
SWITCHING
–
4.0
2.8
‘::*,,,,>,::$
,,.:.~~}
,-.J
\,.t. ,$$.~.,.’
Voltage
(It=
Collector-Emitter
20,000
..3$$’ ‘%ti 2
,.i<r .,$
+,..!,:!:$.
‘C E (sa~~y~$ ~<
*::,. .\*>\._
0.15 Adc)
10 Adc, IB=O.l
Base-Emitter
–
5,000
,$%S;>,”
(1C = 4.0 Adc, VCE = 3.0 Vdcl
(IC = 0.4 Adc, VCE = 3.0 Vdc)
Collector-Emitter
.~~
~~,,,t~~
,,<,,+r,, ,-u,.~l,
. ... .:>
>.,+..
~:~,>;$<$,>~
mAdc
‘\:?i=“’i~$~j,,
%*,.,,,~.~’~
..
.@ie>;,
.,
~,s;ti~.,.
\~~
i<~,,.,.,..
,.,
—
~
#s
Cvcle < 2.0%.
.:?. ~:\t;\:
,,\\
,
-%?.
,;$
l\:)~?
,>?
,:.,/ ,.,
FIGURE
1 – ~’~fij@ORWARD
SA,~@;&’%ATING
BIASED
AREA
There
are two
a transistor:
limitations
average junction
Safe operating
area curves indicate
tor that must be’observed
must
not
on the
be subjected
power
temperature
IC-VCE
handling
greater
of
limits of the transis-
for reliable operation;
to
abilitv
and second breakdown.
dissipation
i.e., the transistor
than
the curves
TJ(pk)
is variable
indicate.
The data of Figure 1 is based on Tc = 25°C;
I
%
1.o~-”-
JUwll
B~ndingwirsLimit
!-
depending
on power
level.
Second
breakdown
TJ(pk)
may be calculated
can be handled
from the data in Figure 7. At high
thermal
limitations
to values
less than
will reduce the power that
the limitations
second breakdown.
‘L
VCE, COLLECTOR-EMITTER
~
are
valid for duty cycles to 10%.
case temperatures
,.
pulse I imits
VOLTAGE
(VOLTS)
MOTOROLA
Semiconductor Products /nc.
imposed
by
FIGURE
2–
DC CURRENT
GAIN
FIGURE”3
REGION
1
-JUQL-
5UU-
– COLLECTOR-SATURATION
\
200
I
1
I
I
0.2
I
I
I
I II
0.5
I
T,0
I
.2.0
I
I
[ I I I II
5:0
“lo
\l
15
Ic, COLLECTORCURRENT (AMPS)
FIGURE
4 – COLLECTOR
SATURATION
VOLTAGE
=
@Jc(t)r(t)eJc
1
~
U.UL
‘i”’
I
----
‘
0.01
I
I
..
---,-.
11111!
I
0,2
0,3
0,5
0.7
1,0
2.0
3,0
5.0
7.0
10
20
I
30
m
DcuRvESAPPLYFORPOWER
,
,,.L
I
0.01
0.1
I
oJc = 1.46
I
I
I
I
50
ti
I
1
1
I
1 1 11
I
I
I
I
I
I
[
I
200
I
300
I
iii
I
70
Ill
100
t, TIME (msl
m
MOTOROLA
ti
SemiconductorProductsInc.
I
I I
I I Ill]
500 700 1000
-,:,:,
.,,
, ,,
.,,
.,
,’..
,’
.,
●
a
●
:
●
,,
FIGURE 7-
-9.0
tr,
Dutv
tf<l
and
51
Ons
1.0%
Rc
Varied
D1
Must
FIGURE 9,105
TIMES TEST CIRCUIT
v
Cycle’=
RB
WITCHING
,
1
to, Obtain
be Fast
Desired
Recovery
COLLECTOR
[
I
Current
”Type,
cuT-OFF
I
x
Levels
eg:
REGlON
!/
“
f
,,
II
1
.t
Ic, COLLECTOR
MOTOROLA
@
CURRENT
(AMPS)
Semiconductor Products Inc.
135F78/3.5Printed
in Switzerland