D44VH Series - New Jersey Semiconductor

, One.
J.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
D44VH Series
30-80 VOLTS
15 AMP, 83 WATTS
VERY HIGH SPEED
NPN POWER TRANSISTORS
COMPLEMENTARY TO THE D45VH SERIES
TheD44VH is an NPN power transistor especially designed for
use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where
very fast switching and low-saturation voltages are necessary.
This device complements the D45VH PNP power transistor
and is characterized with performance information which
relates directly to switching.
Features:
• Fast Switching ts
t,
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
700 ns resistive
200 ns
CASE
TEMPERATURE
REFERENCE
POINT
• LOW VcE(sat) < 0.4V @ IC = 8A
.03310.841
OZ7'069'
.05511 391
045(1 14)
TYPE
'U-i20 AB
IW
K-.'0512.671
p ^J
.095(241]
fcl-
21015.331
.08110.63)
TERM 1
TCHM 2
TERM 3
IAE
CASE
COLLECTOR
FK'I'ifR
COLLECTOR
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
maximum ratings (TA = 25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
Total Power Dissipation @ TC = 25° C
@Tc = 100°C
Derate above 25° C
Operating and Storage Junction
Temperature Range
SYMBOL
D44VH1
D44VH4
D44VH7
D44VH10
VcEO(sus)
30
45
60
80
V
VCEX
VCEV
40
55
70
90
V
50
65
80
100
V
VEB
ic
I CM
IB
IBM
PD
TJ, TSTG
UNIT
7
V
15
20
5
10
83
33
.67
A
A
Watts
W/°C
-55 to -150
°C
thermal characteristics
CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
SYMBOL
MAX
UNIT
R0jc
1.5
°C/W
R0JA
74
TL
235
°c/w
°c
(1) Pulse measurement condition PW ^ 6 0 ms, See Figure 14
electrical Characteristics (Tc = 25° C)
(unless otherwise specified)
CHARACTERISTICS
|
SYMBOL
MIN
MAX
UNIT
off characteristics*1'
Collector-Emitter Sustaining Voltage'1' (Ic = 100mA, IB = 0)
D44VH1
D44VH4
D44VH7
D44VH10
Collector-Emitter Voltage<2>
(lc = 1A, VCLAMP = Rated VCEX, TC = 100°C)
D44VH1
D44VH4
D44VH7
D44VH10
Collector Cutoff Current
(VcEV = Rated Value, VBE(off) = 4.0V)
(VCEV = Rated Value, Vgfjoff) =4-°v, TC = 100°C)
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 fl, TC = 100°C)
Emitter Cutoff Current (VEB = 7V, IG = 0)
VcEO(sus)
V
30
45
60
80
—
V
VCEX
40
55
65
90
—
—
10
100
ICER
—
100
//A
IEBO
—
10
£
ICEV
0A
|
second breakdown
Second Breakdown with Base Forward Biased
Second BreaKdown with Base Reverse Biased
SEE FIGURE 7
SEE FIGURE 8
FBSOA
RBSOA
on characteristics'1'
DC Current Gain
(lc = 2 A, VCE = W)
(IC = 4 A , VCE = 1V)
Collector-Emitter Saturation Voltage
Oc = 8A, IB = 0.4A)
(IC = 8A, IB = 0.4A, TC = 100°C)
(lc = 15A, IB = 3.0A, T c = 100°C)
Base-Emitter Saturation Voltage
(lc = 8A, I B =0.4A)
(lc = 8A, IB = 0.4A, TC - 100°C)
hFE
VCE(sat)
vBE(sat)
—
35
20
—
—
0.4
0.5
0.8
-
1.2
1.1
V
dynamic characteristics
Current-Gain — Bandwidth Product
(IC = 0.1A, VCE = 10V, ftest = 1 MHz)
Output Capacitance
(VCB = 10V, IE = 0, ftest = 1 MHz)
Typical
fT
50
MHz
COB
120
PF
TC
Maximum
25°C
100°C
switching characteristics
Resistive Load (See Figure 16 for Test Circuit)
Delay Time
Vri~ = 20V \ • 8A
Rise Time
IB1 = 'B2 = 0.8A
Storage Time
tn = 25 yusec
Fall Time
Inductive Load, Clamped (See Figure 15 for Test Circuit)
Storage Time
VCC = 20V, IC = 8A
Fall Time
VCLAMP = Rated VCEx
IB1 = 0.8A. VBE(off) =-5V
Storage Time
L ~ 200 //h
Fall Time
(1) Pulse Duration = 300 //sec, Duty Factor« 2%.
(2) See Figure 15 for Test Circuit.
V
td
50
tr
250
700
—
200
—
ts
tf
—
—
nsec
nsec
nsec
nsec
ts
tf
800
—
180
400
nsec
nsec
ts
tf
283
370
150
nsec
nsec
Typical
130