MA02203AD 3.6 V, 450 mW DECT RF Power Amplifier IC Features § Ideal for DECT Applications § +26.5 dBm Output Power § 24.5 dB Power Gain § Single Positive Supply § Class A Bias § No External RF Matching Required Functional Schematic N/C Description The MA02203AD is a two stage power amplifier designed for DECT applications to have an output power of +26.5 dBm with an input power of 2 dBm. This power amplifier operates at +3.6 volts with 35% typical power added efficiency. The MA02203AD is mounted in a narrow body 16-pin SOIC plastic package. The MA02203AD is fabricated using M/A-COM’s self-aligned MSAG ®-Lite MESFET process for a low single supply voltage, high power efficiency, and excellent reliability. This part is not recommended for new designs. M/ACOM’s MA02206GJ has superior RF performance with less DC power consumption in a smaller package. Pricing on the MA02206GJ is also less than the MA02203AD. Ordering Information Part Number MA02203AD-R7 MA02203AD-R13 Description 7 inch, 1000 piece reel 13 inch, 3000 piece reel V 1.0 N/C +VDD1 +VDD2 GND GND GND GND RF IN RFOUT GND GND GND GND N/C N/C 16 pin narrow body SOIC Pin Configuration Pin Function Description 1 N/C Not Connected 2 VDD1 First Stage Supply Voltage 3 GND Ground 4 GND Ground 5 RFIN RF Input 6 GND Ground 7 GND Ground 8 N/C Not Connected 9 N/C Not Connected 10 GND Ground 11 GND Ground 12 RFOUT 13 GND Ground 14 GND Ground 15 VDD2 Second Stage Supply Voltage 16 N/C Not Connected RF Output Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1 Part 3.6 Description V, 450 mW DECT RF Power Amplifier IC MA02203AD V 1.0 Electrical Specifications: T S = 40 °C , Z0 = 50 Ω 1 Parameter 2,3 Test Conditions Units Min Frequency MHz 1880 Output Power dBm 25.5 Typ Max 1900 26.5 27.5 0.5 Pout Frequency Dependency dB 0.2 Power Gain dB 24.5 Current Consumption mA 350 420 Input VSWR, PA On - 1.6:1 2.0:1 1.4:1 2.0:1 Input VSWR, PA Off VDD1 , VDD2 = 0 V - Isolation, PA Off VDD1 , VDD2 = 0 V dB 2nd Harmonics rd 3 Harmonics 40 dBc 31 dBc 55 Thermal Resistance Junction of 2nd stage FET to pin 11, Duty Cycle=50% Load Mismatch VDD = 4.6 V, VSWR = 10:1, PIN = 7 dBm - No degradation Stability PIN = -3 to +7 dBm, VDD = 0 - 4.6 V, 0 mW < POUT < 450 mW, TS = -40 to +75 °C, Load VSWR = 10:1 - All spurs < -60 dBc o C/W 63 1. Ts is the temperature measured at the soldering point of pin 11. 2. Unless otherwise specified, input power is +2 dBm, VDD is +3.6 V, and test frequency is 1890 MHz. Absolute Maximum Ratings1 Parameter Max Input Power Operating Voltages Operating Temperature, Ts Channel Temperature Storage Temperature Absolute Maximum +6 dBm +5.5 volts -40 °C to +75 °C +150 °C -40 °C to +150 °C 1. Exceeding any one or combination of these limits may cause permanent damage. Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 Part 3.6 Description V, 450 mW DECT RF Power Amplifier IC MA02203AD V 1.0 Application Information Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. Board Layout Sample Test Board 50 Ohm Lead Transition Typical Performance Curves Output Power and Current vs. Input Power Output Power, PAE, and VSWR vs. Frequency 30 4:1 45 0.6 η 40 POUT 0.4 I DD 15 10 f = 1.89 GHz VDD = 3.6 V 0.2 P OUT 30 25 PIN = +2 dBm VDD = 3.6 V 20 2:1 15 10 5 3:1 Input VSWR 20 P OUT (dBm) and η (%) 35 IDD, Drain Current (A) POUT, Output Power (dBm) 25 VSWR 5 0 0 0.0 -10 -5 0 PIN, Input Power (dBm) 5 1:1 1.7 1.8 1.9 ƒ , Frequency (GHz) 2 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 Part 3.6 Description V, 450 mW DECT RF Power Amplifier IC MA02203AD V 1.0 Harmonics Output Power and Current vs. Supply Voltage 20 0.5 20 0.4 IDD 15 0.3 10 0.2 ƒ =1.89 GHz PIN = +2 dBm 0 3.0 3.2 3.4 3.6 3.8 4.0 VDD, Supply Voltage (V) 4.2 4.4 0 -40 ƒο 0.6 30 0.5 25 0.4 IDD 0.3 10 0.2 P IN = +2 dBm V DD = 3.6 V 0.1 0 1.8 1.9 ƒ , Frequency (GHz) 20 IDD 0.3 10 0.2 P IN = +2 dBm V DD = 3.6 V Ts = +75 °C 0.1 0 0.5 2.5 0.2 P IN = +2 dBm V DD = 3.6 V 0.1 0 0.0 0 25 50 TS, Operating Temperature (°C) IDD 15 3.0 0.3 10 -25 0.4 0.6 0.4 -50 20 1.7 I DD, Drain Current (A) P OUT, Output Power (dBm) P OUT 5 0.5 POUT 1.8 1.9 ƒ , Frequency (GHz) 2 Power Dissipation vs. Temperature 30 15 5ƒο 0 2 Output Power and Current vs. Temperature 25 4ƒο 0.6 5 0 1.7 3ƒο Output Power and Current vs. Frequency, Ts = +75oC IDD, Drain Current (A) P OUT, Ouput Power (dBm) 20 Ts = -40 °C 2ƒο Frequency P OUT 5 -20 4.6 30 15 -10 -30 Output Power and Current vs. Frequency, Ts = -40oC 25 0 IDD, Drain Current (A) 2.8 ƒo = 1.89 GHz PIN = +2 dBm VDD = 3.6 V 10 0.1 P OUT, Ouput Power (dBm) 5 POUT, Output Power (dBm) POUT 30 75 PDISS, Dissipated Power (W) POUT, Output Power (dBm) 25 0.6 IDD, Drain Current (A) 30 2.0 Slope = -1 / RTH J-S 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 TS, Temperature at Solder Point of Pin 11 (°C) 175 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4 Part 3.6 Description V, 450 mW DECT RF Power Amplifier IC MA02203AD V 1.0 Application Schematic +VDD C1 L1 N/C C2 L2 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 N/C RF OUTPUT RF INPUT N/C N/C 60mil GETEK Board List of components: C1 = C2 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL) L1 = 8.2 nH Coilcraft chip inductor (1008CT.080XKBB) L2 = 27 nH Coilcraft chip inductor (1008CS.270XKBB) SOIC-16 Narrow Body Package Symbol A A1 A2 B C D E e H L y θ Dimensions in millimeters Min Nom Max 1.35 1.60 1.75 0.10 0.25 1.45 0.33 0.41 0.51 0.19 0.20 0.25 9.80 9.91 10.01 3.80 3.91 4.00 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 0° 8° Dimensions in inches Min 0.053 0.004 0.013 0.0075 0.386 0.150 0.228 0.015 Nom 0.063 0.057 0.016 0.008 0.390 0.154 0.050 0.236 0.028 0° Max 0.068 0.010 0.020 0.0098 0.394 0.157 0.244 0.050 0.004 8° NOTES: 1. 2. 3. 4. 5. 6. Controlling dimension: inch Lead frame material: copper alloy C151 Lead thickness after solder plating will be 0.013" maximum Dimension “D” does not include mold flash, protrusions or gate burrs Dimension “E” does not include interlead flash or protrusions Tolerance: ±0.010" unless otherwise specified Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 5