MA-COM MAAPGM0042-DIE

RO-P-DS-3037- -
MAAPGM0042-DIE
1.2W X/Ku-Band Power Amplifier
11.5-16.0 GHz
Preliminary Information
Features
♦
♦
♦
♦
11.5-16.0 GHz GaAs MMIC Amplifier
11.5-16.0 GHz Operation
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG® MESFET Process
Primary Applications
♦ Point-to-Point Radio
♦ SatCom
♦ Radio Location
Description
The MAAPGM0042-DIE is a 3-stage 1.2 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction SelfAligned Gate (MSAG®) MESFET Process. This process features
silicon oxynitride passivation and polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
11.5-16.0
GHz
Output Power
POUT
31
dBm
Power Added Efficiency
PAE
30
%
1-dB Compression Point
P1dB
28
dBm
Small Signal Gain
G
20
dB
VSWR
VSWR
1.9:1
Gate Current
IGG
<5
mA
Drain Current
IDD
< 600
mA
Output Third Order Intercept
OTOI
35
dBm
Noise Figure
NF
10
dB
2nd Harmonic
2f
-27
dBc
3rd Harmonic
3f
-35
dBc
1. TB = MMIC Base Temperature
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MAAPGM0042-DIE
Maximum Operating Conditions 1
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
23.0
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
660
mA
Quiescent DC Power Dissipated (No RF)
PDISS
4.4
W
Junction Temperature
TJ
180
°C
Storage Temperature
TSTG
-55 to +150
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
4.0
8.0
10.0
V
Gate Voltage
VGG
-2.5
-2.0
-1.5
V
Input Power
PIN
18.0
20.0
dBm
Junction Temperature
TJ
150
°C
MMIC Base Temperature
TB
Note 2
°C
2. Maximum MMIC Base Temperature = 150°C — 18.2 °C/W * VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: [email protected]
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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MAAPGM0042-DIE
50
50
POUT
PAE
40
40
30
30
20
20
10
10
0
0
10.5
11.5
12.5
13.5
14.5
15.5
16.5
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V
and Pin = 18 dBm.
50
50
POUT
PAE
40
40
30
30
20
20
10
10
0
0
4
5
6
7
8
9
10
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 13.5 GHz.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: [email protected]
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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MAAPGM0042-DIE
50
VDD = 4
VDD = 8
VDD = 6
VDD = 10
40
30
20
10
0
10.5
11.5
12.5
13.5
14.5
15.5
16.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
6
GAIN
VSWR
25
5
20
4
15
3
10
2
5
1
10.5
11.5
12.5
13.5
14.5
15.5
16.5
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: [email protected]
„
„
„
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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MAAPGM0042-DIE
Mechanical Information
Chip Size: 2.980 x 1.980 x 0.075 mm
(117
x 78 x 3 mils)
2.980mm
1.475mm.
0.123mm.
1.980mm
VDD
1.736mm.
VGG
0.239mm.
0.940mm.
OUT
IN
0.0940mm
0
2.846mm.
1.480mm.
0
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 5. Die Layout
Bond Pad Dimensions
Pad
Size (µm)
Size (mils)
RF In and Out
100 x 200
4x8
DC Drain Supply Voltage VDD
200 x 150
8x6
DC Gate Supply Voltage VGG
150 x 150
6x6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: [email protected]
„
„
„
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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MAAPGM0042-DIE
VDD
100 pF
0.1 µF
VDD
RFIN
RFOUT
OUT
IN
VGG
100 pF
100 Ω
VGG
0.1 µF
Figure 6. Recommended operational configuration. Wire bond as shown.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: [email protected]
„
„
„
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.