MAAPSM0008 1-Watt Power Amplifier 5 - 6 GHz Features • • • • • V 1.1 MAAPSM0008 Functional Schematic U-NII and Hiperlan Applications Saturated Output Power 30.5 dBm at +7.0 V Power Added Efficiency 40 Percent No External RF Matching 4-mm FQFP-N, 16-Lead Package Description The MAAPSM0008 is a two -stage power amplifier mounted in a standard outline, 16-lead, 4-mm FQFP-N plastic package, designed specifically for the U-NII, MMAC, and Hiperlan bands. The MAAPSM0008 has fully matched 50 ohms input and output, eliminating the need for external RF tuning components. Pin 16 N/C Pin 1, 3, 4 ,5 ,7, 8, 9, 12, 13, 14, 15, 16 Function Descriptions NC No connection 2 RFIN RF input to the amplifier. DC block on-chip. 50 ohm input. 6 V dd Positive voltage supply to both stages 10 RFOUT RF output of the amplifier. DC block on-chip. 50 Ohm output. 11 V gg Negative voltage supply to the gates of both stages Pad GND RF & DC ground Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. N/C N/C Pin 1 N/C N/C RFin Vgg N/C RFout N/C N/C M/A-COM fabricates the MAAPSM0008 using a selfaligned gate MESFET process to realize high power efficiency and small size. The process features full passivation for performance and reliability. Pin Configuration N/C N/C Vdd N/C N/C Ordering Information Part Number Package MAAPSM0008TR MAAPSM0008 on 7-inch, 1000-piece reel MAAPSM0008TR-3000 MAAPSM0008 on 13 inch, 3000-piece reel MAAPSM0008SMB MAAPSM0008 Sample Test Board 1-Watt, 5 GHz Power Amplifier MAAPSM0008 V 1.1 Electrical Specifications: TC = 40 °C, VDD = 7.0 V, I DQ = 360 mA (unless otherwise specified) Parameter Test Conditions Units Min. GHz 5.0 Frequency Input VSWR F = 5.825 GHz, Pin = +14 dBm Gain P1dB F = 5.825 GHz, Pin = 0 dBm F = 5.825 GHz dB dBm Saturated Power Drain Current at Psat F = 5.825 GHz, Pin = +14 dBm F = 5.825 GHz, Pin = +14 dBm dBm mA Harmonics 2ƒ 3ƒ Thermal resistance Third-Order Intercept Point Stability Output Power = 30.5 dBm dBc dBc °C/W dBm 18.0 Characteristic Max. 1.5:1 6.0 2.0:1 Typ. @ V DD + 5 V 1.5:1 19.5 29.5 29.5 19.0 28.0 30.5 500 29.0 500 600 -40 -70 31 40 +3.0 V < V DD < +10.0 V, POUT < +15 dBm, VSWR < 6:1, -25 ºC < TC < 70 ºC, RBW = 3 MHz max. hold Recommended Operating Conditions Typ. -40 -70 31 38 All spurs < -70 dBc 1 Symbol Unit Min Typ Max Drain Voltage V DD V 4.5 7.0 8.0 Gate Voltage 2 V GG V -2.5 -2.0 -1.0 Input Power PIN dBm — 15 Gate Current IGG mA -4 1 +4 Case Temperature TC °C -40 25 70 1. Operation outside of these ranges may reduce product reliability. 2. A 100 E-Series resistor should be used in the gate voltage line. Operating The MAAPSM0008 The MAAPSM0008 is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 5 to 7 V. 3. Adjust VGG to set IDQ, (approximately –2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 1-Watt, 5 GHz Power Amplifier MAAPSM0008 V 1.1 Application Information Sample Board C1 R1 Plated Vias Plated Vias Via s C2 Notes on board design 1. 2. 3. 4. 5. Sample board uses RO4350 er = 3.48 as dielectric for circuit board. Dielectric thickness is not critical but RFin and RFout transmission lines should be 50 ohms (w = 22 mil for thickness = 10 mil). Solder the exposed paddle on the back of the package to the board. Proper attachment of the exposed paddle is essential for RF and DC ground in addition to providing a low thermal resistance. Case temperature (Tc) is measured as shown on the application board drawing on the top circuit board metal as close to the body of the package as possible. The board must provide adequate heat sinking to accommodate the 2.5 W typically dissipated under small signal conditions. Sample board uses vias in the vicinity of the ground pad to provide a suitable heat sink connected to the ground plane of the board as shown above (recommend thetaCA = 5 °C/W max). Placement of C1, C2 and R1 are not critical but use of 1206 for the bypass caps (C1 and C2) is critical. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 1-Watt, 5 GHz Power Amplifier MAAPSM0008 V 1.1 Gain Vs. Frequency Gain Vs. Frequency PIN = + 6 dBm, V DD = 7 V PIN = + 6 dBm, V DD = 5 V 24 24 22 22 20 20 GAIN (dB) GAIN (dB) Typical Performance Curves 18 16 14 10 4.0 4.5 5.0 5.5 6.0 16 14 - 25 deg. C 50 deg. C 70 deg. C 12 18 - 25 deg. C 50 deg. C 70 deg. C 12 10 6.5 4.0 4.5 FREQUENCY (GHz) 6.0 Output Power Vs. Frequency PIN = + 12 dBm, V DD = 7 V PIN = + 12 dBm, V DD = 5 V 6.5 28 26 - 25 deg. C 50 deg. C 70 deg. C 24 4.0 4.5 5.0 5.5 6.0 Output Power (dBm) 32 30 Output Power (dBm) 5.5 Output Power Vs. Frequency 32 30 28 26 - 25 deg. C 50 deg. C 70 deg. C 24 6.5 4.0 4.5 5.0 5.5 6.0 6.5 FREQUENCY (GHz) FREQUENCY (GHz) PAE Vs. Frequency PAE Vs. Frequency PIN = + 12 dBm, V DD = 7 V PIN = + 12 dBm, V DD = 5 V 45 45 - 25 deg. C 50 deg. C 70 deg. C 35 30 - 25 deg. C 50 deg. C 70 deg. C 40 PAE (%) 40 PAE (%) 5.0 FREQUENCY (GHz) 35 30 25 25 4.0 4.5 5.0 5.5 6.0 6.5 FREQUENCY (GHz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4.0 4.5 5.0 5.5 6.0 6.5 FREQUENCY (GHz) 4 1-Watt, 5 GHz Power Amplifier MAAPSM0008 V 1.1 Typical Performance Curves Input Return Loss Vs. Frequency Input Return Loss Vs. Frequency PIN = + 12 dBm, V DD = 5 V -3 -3 -6 -6 RETURN LOSS (dB) RETURN LOSS (dB) PIN = + 12 dBm, V DD = 7 V -9 -12 -15 -18 - 25 deg. C 50 deg. C 70 deg. C -21 -24 -27 -9 -12 -15 -18 -21 - 25 deg. C 50 deg. C 70 deg. C -24 -27 4.0 4.5 5.0 5.5 6.0 6.5 4.0 4.5 FREQUENCY (GHz) Dissipated Power vs. Case Temperature PDiss vs Channel Temperature (Tc) 5.5 6.0 6.5 Output Power & Gain Vs. Input Power Freq = 5.80 GHz, V DD = 7 V 35 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Pout (dBm), Gain (dB) PDiss (W) 5.0 FREQUENCY (GHz) 30 Pout Gain 25 20 15 1 0 25 50 75 100 125 150 3 5 175 7 9 11 13 15 Pin (dBm) Tc (C) 1-dB Compression Vs. Frequency P1dB, Gain Vs. Quiescent Bias V DD = 7 V, IDq = 0.360 A V DD = 7 V, Freq = 5.8 GHz 32 Gain (dB), P1dB (dBm) 32 P1dB (dBm) 30 P1dB 28 26 24 5.0 5.2 5.4 5.6 5.8 6.0 Pin (dBm) Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 30 28 26 P1dB Gain 24 22 20 18 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 IDQ (A) 5 1-Watt, 5 GHz Power Amplifier MAAPSM0008 V 1.1 4-mm FQFP-N, 16-Lead (MLP) Package, Saw Singulated Dim A A2 D A1 16 1 2 E 3 4 PIN #1 IDENTIFIER 16 x b D2 e 3xe L E2 Measurement (mm) Min. 0.80 Nom. 0.90 Max. 1.00 A1 0 0.02 0.05 A2 0.80 0.88 1.00 A b 0.23 0.30 0.38 D - 4.00 basic - D2 2.05 2.15 2.25 e 0.65 basic E - 4.00 basic - E2 2.05 2.15 2.25 L 0.45 typ. 0.55 typ. 0.65 typ. Note: See JEDEC MO-220A VGGC Issue B for additional dimensional and tolerance information. e 3xe Handling Procedures Please observe the following precautions to avoid damage to the MAAPSM0008: Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling t hese devices. Absolute Maximum Ratings 1 Parameter Max Input Power (5 - 6 GHz) Operating Voltages Operating Temperature Absolute Maximum + 15 dBm +10 volts -40 °C to +70 °C Channel Temperature +150 °C Storage Temperature -40 °C to +150 °C 1. Exceeding any one or combination of these limits may cause permanent damage. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 6