CY62138VN MoBL® 256K x 8 Static RAM Features Functional Description • Temperature Ranges — Industrial: –40°C to 85°C • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power • Offered in standard non-lead-free 36-ball FBGA package The CY62138VN is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can be put into standby mode when deselected (CS1 HIGH or CS2 LOW). Writing to the device is accomplished by taking Chip Enable One (CS1) and Write Enable (WE) inputs LOW and Chip Enable Two (CS2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17).Reading from the device is accomplished by taking Chip Enable One (CS1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable Two (CS2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CS1 HIGH or CS2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CS1 LOW, CS2 HIGH, and WE LOW). PinConfiguration Logic Block Diagram FBGA TOP View A6 A7 A8 256K x 8 ARRAY CS 2 4 5 6 A0 A1 CS2 A3 A6 A8 A I/O4 A2 WE A4 A7 I/O0 B NC A5 I/O1 C I/O2 VSS VCC D I/O3 VCC VSS E I/O2 F I/O4 I/O6 I/O5 COLUMN DECODER CS1 SENSE AMPS A5 3 I/O5 I/O1 ROW DECODER A4 2 I/O0 Data in Drivers A0 A1 A2 A3 1 POWER DOWN A17 I/O6 I/O7 OE CS1 A16 A15 I/O3 G I/O7 A9 A10 A11 A12 A13 A14 H A9 A 10 A 11 A12 A13 A14 A15 A16 A17 WE NC OE Product Portfolio Power Dissipation (Industrial) VCC Range Product CY62138VN VCC(min) 2.7V VCC(typ) [1] 3.0V Operating (Icc) VCC(max) Speed Typ.[1] 3.6V 70 ns 7 mA Standby (ISB2) Maximum Typ.[1] Maximum 15 mA 1 µA 15 µA Note: 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC Typ, TA = 25°C. Cypress Semiconductor Corporation Document #: 001-06513 Rev. ** • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised February 2, 2006 [+] Feedback CY62138VN MoBL® DC Input Voltage[2] ................................ –0.5V to VCC + 0.5V Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current.................................................... > 200 mA Operating Range Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[2] ....................................–0.5V to VCC + 0.5V Device Range CY62138VN Industrial Ambient Temperature VCC –40°C to +85°C 2.7V to 3.6V Electrical Characteristics Over the Operating Range CY62138VN Parameter Description Test Conditions Min. VOH Output HIGH Voltage IOH = -1.0 mA VCC = 2.7V VOL Output LOW Voltage IOL = 2.1 mA VCC = 2.7V VIH Input HIGH Voltage VCC = 3.6V VIL Input LOW Voltage VCC = 2.7V IIX Input Leakage Current GND < VI < VCC –1 IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 ICC VCC Operating Supply Current IOUT = 0 mA, f = fMAX = 1/tRC, CMOS Levels VCC = 3.6V IOUT = 0 mA, f = 1 MHz, CMOS Levels Typ.[1] Max. Unit 2.4 V 0.4 V 2.2 VCC + 0.5V V –0.5 0.8 V ±1 +1 µA +1 +1 µA 7 15 mA 1 2 mA 100 µA 15 µA ISB1 Automatic CE Power-down Current— CMOS Inputs CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V, f = fMAX VCC = 3.6V ISB2 Automatic CE Power-down Current— CMOS Inputs CE > VCC – 0.3V VIN > VCC – 0.3V or VIN < 0.3V, f = 0 VCC = 3.6V 1 Test Conditions Max. Unit 6 pF 8 pF Capacitance[3] Parameter Description CIN Input Capacitance COUT Output Capacitance TA = 25°C, f = 1 MHz, VCC = VCC(typ) Notes: 2. VIL(min) = –2.0V for pulse durations less than 20 ns. 3. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-06513 Rev. ** Page 2 of 8 [+] Feedback CY62138VN MoBL® AC Test Loads and Waveforms R1 VCC ALL INPUT PULSES OUTPUT VCC Typ 10% R2 30 pF 90% 10% 90% GND < 5 ns < 5 ns INCLUDING JIG AND SCOPE Equivalent to: THÉVENIN EQUIVALENT RTH OUTPUT V Parameters Value Unit R1 1105 Ohms R2 1550 Ohms RTH 645 Ohms VTH 1.75 Volts Data Retention Characteristics (Over the Operating Range) Parameter Conditions[4] Description VDR VCC for Data Retention ICCDR Data Retention Current tCDR[3] Chip Deselect to Data Retention Time tR Operation Recovery Time Min. Typ.[1] 1.0 VCC = 1.0V CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V No input may exceed VCC+0.3V 0.1 Max. Unit 3.6 V 5 µA 0 ns 100 ms Data Retention Waveform[5] DATA RETENTION MODE VCC VCC(min.) tCDR VDR > 1.0V VCC(min.) tR CE Notes: 4. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to VCC typ., and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. CE is the combination of both CS1 and CS2. Document #: 001-06513 Rev. ** Page 3 of 8 [+] Feedback CY62138VN MoBL® Switching Characteristics Over the Operating Range[4] CY62138VN Parameter Description Min. Max. Unit Read Cycle tRC Read Cycle Time 70 tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 70 ns tDOE OE LOW to Data Valid 35 ns OE LOW to Low-Z tHZOE OE HIGH to High-Z[6, 7] CE LOW to Low-Z[6] tHZCE CE HIGH to High-Z[6, 7] tPU CE LOW to Power-up tPD CE HIGH to Power-down tLZCE Write 70 10 [6] tLZOE ns ns ns 5 ns 25 10 ns ns 25 0 ns ns 70 ns Cycle[8, 9] tWC Write Cycle Time 70 ns tSCE CE LOW to Write End 60 ns tAW Address Set-up to Write End 60 ns tHA Address Hold from Write End 0 ns tSA Address Set-up to Write Start 0 ns tPWE WE Pulse Width 50 ns tSD Data Set-up to Write End 30 ns tHD Data Hold from Write End 0 ns tHZWE tLZWE WE LOW to High-Z[6, 7] WE HIGH to Low-Z[6] 25 10 ns ns Switching Waveforms Read Cycle No. 1[10, 11] tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID Notes: 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in (b) of AC Test Loads. Transition is measured ± 500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 9. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. 10. Device is continuously selected. OE, CE = VIL. 11. WE is HIGH for read cycle. Document #: 001-06513 Rev. ** Page 4 of 8 [+] Feedback CY62138VN MoBL® Switching Waveforms (continued) Read Cycle No. 2[5., 11, 12] tRC CE tACE OE DATA OUT tHZOE tHZCE tDOE tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPD tPU ICC 50% 50% ISB Write Cycle No. 1 (WE Controlled)[5, 8, 13, 14] tWC ADDRESS CE tAW tHA tSA WE tPWE OE tSD DATA I/O tHD DATAIN VALID NOTE 15 tHZOE Write Cycle No. 2 (CE Controlled)[5, 8, 13, 14] tWC ADDRESS tSCE CE tSA tAW tHA WE tSD DATA I/O tHD DATAIN VALID Notes: 12. Address valid prior to or coincident with CE transition LOW. 13. Data I/O is high impedance if OE = VIH. 14. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 15. During this period, the I/Os are in output state and input signals should not be applied. Document #: 001-06513 Rev. ** Page 5 of 8 [+] Feedback CY62138VN MoBL® Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[5, 9, 14] tWC ADDRESS CE tAW tHA tSA WE tSD DATA I/O tHD DATAIN VALID NOTE 15 tLZWE tHZWE Typical DC and AC Characteristics STANDBY CURRENT vs. AMBIENT TEMPERATURE 1.4 3.0 1.2 2.5 1.0 VCC = VCC typ. 2.0 VIN = VCC typ. ICC ISB2 µA NORMALIZED ICC NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 0.8 0.6 VIN = VCC typ. TA = 25°C 0.4 1.0 0.5 0.0 0.2 0.0 1.7 2.2 2.7 3.2 –0.5 −55 3.7 NORMALIZED STANDBY CURRENT vs. SUPPLY VOLTAGE NORMALIZED ICC vs. CYCLE TIME ISB2 0.8 VIN = VCC typ. 0.4 NORMALIZED ICC 1.2 0.6 105 1.50 1.4 1.0 25 AMBIENT TEMPERATURE (°C) SUPPLY VOLTAGE (V) NORMALIZED ISB ISB 1.5 VCC = 3.3V TA = 25°C 1.00 0.50 0.2 0.0 1.0 0.10 1.9 2.8 3.7 1 5 15 10 CYCLE FREQUENCY (MHz) SUPPLY VOLTAGE (V) Document #: 001-06513 Rev. ** Page 6 of 8 [+] Feedback CY62138VN MoBL® Truth Table CS1 H CS2 X WE X OE X Inputs/Outputs High-Z Mode Deselect/Power-down Power Standby (ISB) X L X X High-Z Deselect/Power-down Standby (ISB) L H H L Data Out Read Active (ICC) L H L X Data In Write Active (ICC) L H H H High-Z Deselect, Output Disabled Active (ICC) Ordering Information Speed (ns) 70 Ordering Code CY62138VNLL-70BAI Package Diagram 51-85099 Operating Range Package Type 36-ball (7.0 mm × 7.0 mm × 1.2 mm) FBGA Industrial Please contact your local Cypress sales representative for availability of other parts Package Diagram 36-Ball FBGA (7 x 7 x 1.2 mm) (51-85099) 51-85099-*C More Battery Life is a trademark, and MoBL is a registered trademark, of Cypress Semiconductor. All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 001-06513 Rev. ** Page 7 of 8 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback CY62138VN MoBL® Document History Page Document Title: CY62138VN MoBL® 256K x 8 Static RAM Document Number: 001-06513 REV. ECN NO. Issue Date Orig. of Change ** 426504 See ECN NXR Document #: 001-06513 Rev. ** Description of Change New Data Sheet Page 8 of 8 [+] Feedback