VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 19 A FEATURES • 125 °C TJ operation (VR < 5 V) Base cathode 2 • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation TO-220AC • Guard ring for enhanced ruggedness and long term reliability 3 Anode 1 Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY Package TO-220AC IF(AV) 19 A • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION VR 15 V VF at IF 0.32 V IRM max. 522 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 6.75 mJ The VS-19TQ015... Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 19 A 15 V 700 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 19 Apk, TJ = 75 °C TJ Range 0.32 V - 55 to 125 °C VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage VS-19TQ015PbF VS-19TQ015-N3 UNITS 15 15 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy Repetitive avalanche current Revision: 25-Aug-11 TEST CONDITIONS VALUES 50 % duty cycle at TC = 80 °C, rectangular waveform 19 5 µs sine or 3 µs rect. pulse 700 UNITS A Following any rated load condition and with rated VRRM applied 10 ms sine or 6 ms rect. pulse 330 EAS TJ = 25 °C, IAS = 1.50 A, L = 6 mH 6.75 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 3 x VR typical 1.50 A Document Number: 94151 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 19 A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 38 A 19 A TJ = 75 °C 38 A TJ = 100 °C, VR = 12 V Maximum reverse leakage current See fig. 2 IRM (1) V 0.43 285 TJ = 25 °C 10.5 VR = Rated VR CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body dV/dt 0.46 0.32 TJ = 100 °C, VR = 5 V TJ = 100 °C UNITS 0.36 465 Maximum junction capacitance Maximum voltage rate of change VALUES Rated VR mA 522 2000 pF 8.0 nH 10 000 V/µs VALUES UNITS Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 55 to 125 Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 1.50 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 Marking device Revision: 25-Aug-11 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque °C Case style TO-220AC 19TQ015 Document Number: 94151 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 100 °C 100 10 TJ = 100 °C TJ = 75 °C TJ = 25 °C 1 100 TJ = 75 °C TJ = 50 °C 10 TJ = 25 °C 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 10 5 15 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 5 10 15 20 25 30 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 t1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 25-Aug-11 Document Number: 94151 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors 10 RthJC (DC) = 1.50 °C/W Average Power Loss (W) Allowable Case Temperature (°C) 105 100 95 DC 90 85 D D D D D 8 = 0.08 = 0.17 = 0.25 = 0.33 = 0.50 6 RMS limit DC 4 2 0 80 0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Revision: 25-Aug-11 Document Number: 94151 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 19 T Q 015 PbF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (19 = 19 A) 3 - Package: 4 - Schottky “Q” series 5 - Voltage rating (015 = 15 V) 6 - Environmental digit T = TO-220 PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-19TQ015PbF 50 1000 Antistatic plastic tube VS-19TQ015-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 25-Aug-11 www.vishay.com/doc?95221 TO-220AC PbF www.vishay.com/doc?95224 TO-220AC -N3 www.vishay.com/doc?95068 Document Number: 94151 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000