VS-100BGQ015 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode Anode PowerTab® PRODUCT SUMMARY Package PowerTab® IF(AV) 100 A VR 15 V VF at IF 0.45 V IRM 870 mA at 100 °C • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC-JESD47 • 125 °C max. operating junction temperature (VR < 5 V) • High frequency operation • Continuous high current operation • PowerTab® package • Compliant to RoHS Directive 2002/95/EC DESCRIPTION TJ max. 125 °C Diode variation Single die EAS 9 mJ The VS-100BGQ015 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform 100 A TC 88 °C 15 V tp = 5 μs sine 5000 A 100 Apk (typical) 0.39 V VRRM IFSM VF TJ TJ UNITS Range 125 °C - 55 to 125 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS VS-100BGQ015 TJ = 100 °C 15 TJ = 125 °C 5 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 100 A Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 3 x VR typical 2 A Repetitive avalanche current Revision: 15-Jun-11 50 % duty cycle at TC = 88 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 5000 A 1000 Document Number: 94578 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ015 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 50 A VFM (1) Forward voltage drop TJ = 25 °C 100 A 50 A TJ = 125 °C 100 A IRM (1) Maximum reverse leakage current 0.4 0.45 0.52 0.27 0.31 UNITS V 0.39 0.45 480 700 mA TJ = 125 °C, VR = 5 V 1 1.2 A TJ = 25 °C 7 18 580 870 VR = Rated VR Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured from tab to mounting plane dV/dt MAX. 0.36 TJ = 100 °C, VR = 12 V TJ = 100 °C Maximum voltage rate of change TYP. Rated VR mA 3800 pF 3.5 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range TEST CONDITIONS VALUES TJ - 55 to 125 Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.50 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.30 Marking device Revision: 15-Jun-11 °C °C/W Approximate weight Mounting torque UNITS 5 g 0.18 oz. minimum 1.2 (10) N·m maximum 2.4 (20) (lbf · in) Case style PowerTab® 100BGQ015 Document Number: 94578 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ015 www.vishay.com Vishay Semiconductors 1000 1000 Reverse Current - IR (mA) 100 75°C 100 50°C 10 25°C Tj = 125°C 1 0 2 4 6 8 10 12 14 16 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 (pF) Instantaneous Forward Current - IF (A) 100°C 10 T Tj = 100°C Junction Capacitance - C Tj = 25°C 1 0.0 0.2 0.4 0.6 0.8 T = 25°C J 1000 1.0 0 Forward Voltage Drop - VFM (V) 2 4 6 8 10 12 14 16 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Jun-11 Document Number: 94578 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ015 Vishay Semiconductors 130 80 120 70 Average Power Loss - (Watts) Allowable Case Temperature (°C) www.vishay.com 110 DC 100 90 80 70 Square wave (D=0.50) 5V applied 60 50 see note (1) 180° 120° 90° 60° 30° 60 RMS Limit 50 40 DC 30 20 10 40 0 0 20 40 60 80 100 120 140 160 0 Average Forward Current - IF(AV)(A) Non-Repetitive Surge Current - I FSM (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 30 60 90 120 150 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics 10000 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 100 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 5 V Revision: 15-Jun-11 Document Number: 94578 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ015 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 100 BGQ 015 1 2 3 4 1 - Vishay Semiconductors product 2 - Current rating 3 - Essential part number 4 - Voltage code = VRRM LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 SPICE model www.vishay.com/doc?95428 Application note www.vishay.com/doc?95179 Revision: 15-Jun-11 Document Number: 94578 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 1.35 (0.05) 1.20 (0.04) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) Lead 2 3.09 (0.12) 3.00 (0.11) 5.45 REF. (0.21 REF.) 0.60 (0.02) 0.40 (0.01) 39.8 (1.56) 39.6 (1.55) 12.10 (0.47) 12.40 (0.48) Lead 1 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 18.25 (0.71) 18.00 (0.70) 4.20 (0.16) 4.00 (0.15) 8.45 (0.33) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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