VS-100BGQ100 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab® 175 °C max. operating junction temperature High frequency operation Low forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY • PowerTab® package Package PowerTab® IF(AV) 100 A VR 100 V VF at IF 0.82 V IRM 180 mA at 125 °C • Compliant to RoHS Directive 2002/95/EC DESCRIPTION TJ max. 175 °C Diode variation Single die EAS 9 mJ The VS-100BGQ100 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform 100 A TC 124 °C 100 V tp = 5 μs sine 6300 A 100 Apk (typical) 0.77 V VRRM IFSM VF TJ TJ UNITS Range 125 °C - 55 to 175 °C 100BGQ100 UNITS 100 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 124 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 100 A 6300 Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Revision: 17-Jun-11 10 ms sine or 6 ms rect. pulse A 800 Document Number: 94581 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ100 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 50 A VFM (1) Forward voltage drop TJ = 25 °C 100 A 50 A TJ = 125 °C 100 A IRM (1) Reverse leakage current TJ = 25 °C VR = Rated VR TJ = 125 °C Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured from tab to mounting plane Maximum voltage rate of change dV/dt Rated VR VALUES TYP. UNITS MAX. 0.83 0.86 1.01 1.08 0.66 0.7 0.77 0.82 22 300 μA 14 18 mA V 1320 pF 3.5 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS - 55 to 175 °C Maximum thermal resistance, junction to case RthJC DC operation 0.50 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.30 °C/W Approximate weight Mounting torque Marking device Revision: 17-Jun-11 5 g 0.18 oz. minimum 1.2 (10) N·m maximum 2.4 (20) (lbf · in) Case style PowerTab® 100BGQ100 Document Number: 94581 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ100 www.vishay.com Vishay Semiconductors 1000 1000 175°C Reverse Current - IR (mA) 100 100 125°C 100°C 1 75°C 0.1 50°C 0.01 25°C 0.001 0.0001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 10 Junc tion Capac itance - C T (pF) Instantaneous Forward Current - IF (A) Tj = 175°C 150°C 10 Tj = 125°C Tj = 25°C 1 0.0 0.5 1.0 1.5 2.0 T = 25°C J 1000 100 Forward Voltage Drop - VFM (V) 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 17-Jun-11 Document Number: 94581 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ100 www.vishay.com Vishay Semiconductors 120 Average Power Loss - (Watts) Allowable Case Temperature (°C) 180 160 140 DC 120 100 Square wave (D=0.50) 80% rated Vr applied 80 180° 120° 90° 60° 30° 100 80 RMS Limit 60 DC 40 20 see note (1) 60 0 0 20 40 60 80 100 120 140 160 0 30 60 90 120 150 Average Forward Current - IF(AV)(A) Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - I FSM (A) 10000 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 100 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 17-Jun-11 Document Number: 94581 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ100 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 100 BGQ 100 1 2 3 4 1 - Vishay Semiconductors product 2 - Current rating 3 - Essential part number 4 - Voltage code = VRRM LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 Application note www.vishay.com/doc?95179 Revision: 17-Jun-11 Document Number: 94581 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 1.35 (0.05) 1.20 (0.04) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) Lead 2 3.09 (0.12) 3.00 (0.11) 5.45 REF. (0.21 REF.) 0.60 (0.02) 0.40 (0.01) 39.8 (1.56) 39.6 (1.55) 12.10 (0.47) 12.40 (0.48) Lead 1 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 18.25 (0.71) 18.00 (0.70) 4.20 (0.16) 4.00 (0.15) 8.45 (0.33) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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