AP02N60P
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
BVDSS
600V
▼ Fast Switching
RDS(ON)
8Ω
▼ Simple Drive Requirement
ID
2A
▼ RoHS Compliant
G
TO-220
D S
Description
D
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,DC-AC
converters for telecom, industrial and consumer environment.
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
2
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1.26
A
6
A
39
W
0.31
W/℃
130
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
2
A
EAR
Repetitive Avalanche Energy
2
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Units
Rthj-c
Symbol
Thermal Resistance Junction-case
Max.
3.2
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Parameter
Data & specifications subject to change without notice
200721052-1/4
AP02N60P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
600
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
-
-
8
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1A
-
0.2
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=2A
-
14
20
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
9.5
-
ns
tr
Rise Time
ID=2A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
21
-
ns
tf
Fall Time
RD=150Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
155
240
pF
Coss
Output Capacitance
VDS=25V
-
27
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Min.
Typ.
-
-
2
A
-
-
6
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=2A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=50mH , RG=25Ω , IAS=1.6A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP02N60P
0.9
1.5
10V
6.0V
5.5V
T C =150 C
1
5.0V
0.5
10V
6.0V
5.5V
o
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
0.6
5.0V
0.3
V G = 4.5 V
V G = 4.5 V
0
0
0
5
10
15
20
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
15
20
Fig 2. Typical Output Characteristics
1.2
3
I D =1A
V G =10V
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
5
V DS , Drain-to-Source Voltage (V)
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
100
5
4
T j = 150 o C
VGS(th) (V)
IS (A)
10
T j = 25 o C
3
1
2
0.1
1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP02N60P
f=1.0MHz
16
1000
VGS , Gate to Source Voltage (V)
I D =2A
12
8
C (pF)
V DS =320V
V DS =400V
V DS =480V
C iss
100
4
C oss
C rss
0
10
0
4
8
12
16
20
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
10
1ms
10ms
ID (A)
1
100ms
1s
DC
0.1
o
T c =25 C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4