AP20N03GS/P
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
30V
RDS(ON)
52mΩ
ID
G
▼ Simple Drive Requirement
▼ RoHS Compliant
BVDSS
20A
S
Description
G D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20N03GP) is available for low-profile applications.
G
D
Absolute Maximum Ratings
Symbol
Parameter
S
TO-263(S)
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
20
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
13
A
60
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200419051-1/4
AP20N03GS/P
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
-
-
52
mΩ
VGS=4.5V, ID=8A
-
-
85
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
3
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=10A
-
6.1
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
Min.
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
4.9
-
ns
tr
Rise Time
ID=20A
-
29
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14.3
-
ns
tf
Fall Time
RD=0.75Ω
-
3.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
290
-
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
-
-
20
A
-
-
60
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25℃, IS=20A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP20N03GS/P
50
70
o
T C =150 C
o
T C =25 C
10V
8.0V
50
40
10V
40
ID , Drain Current (A)
ID , Drain Current (A)
60
6.0V
30
8.0V
30
6.0V
20
4.0V
20
4.0V
10
10
V G =3.0V
V G =3.0V
0
0
0
2
4
6
0
8
2
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
85
1.8
I D =10A
I D =10A
V G =10V
1.6
T C =25 o C
Normalized RDS(ON)
75
RDSON (mΩ)
4
V DS , Drain-to-Source Voltage (V)
65
55
1.4
1.2
1.0
45
0.8
35
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
4. Normalized On-Resistance
v.s. Junction Temperature
3
100
10
T j = 25 o C
o
T j = 150 C
1
VGS(th) (V)
IS (A)
2
1
0.1
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP20N03GS/P
10
f=1.0MHz
1000
8
V DS =16V
V DS =20V
V DS =24V
6
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
C oss
100
4
C rss
2
10
0
0
2
4
6
8
10
1
6
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
16
21
26
31
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
ID (A)
11
V DS , Drain-to-Source Voltage (V)
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4