AP01L60H/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
D
▼ Fast Switching Speed
▼ Simple Drive Requirement
600V
RDS(ON)
12Ω
ID
G
▼ RoHS Compliant
BVDSS
1A
S
Description
The TO-252 package is universally preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
G
D
S
TO-252(H)
G
D S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
0.8
A
1
IDM
Pulsed Drain Current
3
A
PD@TC=25℃
Total Power Dissipation
29
W
0.232
W/℃
0.5
mJ
1
A
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
0.5
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200629052-1/4
AP01L60H/J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max. Units
600
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.8
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.5A
-
-
12
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.5A
-
0.8
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
ID=1A
-
4.0
-
nC
Qgs
Gate-Source Charge
VDS=480V
-
1.0
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
1.1
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
6.6
-
ns
tr
Rise Time
ID=1A
-
5.0
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11.7
-
ns
tf
Fall Time
RD=300Ω
-
9.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
-
pF
Coss
Output Capacitance
VDS=25V
-
30.7
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.1
-
pF
Min.
Typ.
-
-
1
A
-
-
5
A
-
-
1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.2V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
Tj=25℃, IS=1A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP01L60H/J
1.0
1.5
10V
6.0V
5.5V
5.0V
ID , Drain Current (A)
1.0
0.5
10V
5.0V
o
T C =150 C
0.8
ID , Drain Current (A)
o
T C =25 C
V G =4.5V
4.5V
0.5
V G =4.0V
0.3
0.0
0.0
0
12
24
0
36
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
I D =0.5A
V G =10V
1
2
1
0
0.9
-50
0
50
100
-50
150
Fig 3. Normalized BVDSS v.s. Junction
100
150
v.s. Junction Temperature
3.5
1
3.0
VGS(th) (V)
10
IS (A)
50
Fig 4. Normalized On-Resistance
Temperature
T j = 150 o C
0
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
T j = 25 o C
2.5
0.1
0.01
2.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP01L60H/J
f=1.0MHz
1000
I D =1A
V DS =480V
12
C iss
100
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
10
4
C rss
0
0
1.5
3
4.5
1
6
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
10
1
ID (A)
10us
100us
0.1
1ms
o
T c =25 C
Single Pulse
10ms
100ms
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4