Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings @ 25 °C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 7.7 A Total Power Dissipation @ +45 °C PTOT 369 W Storage Temperature TSTG -65 to +200 °C Junction Temperature Tj 200 °C Electrical Characteristics @ 25 °C Parameter Symbol Min. Max. Units Collector-Emitter Breakdown BVCES 65 - V IC=40 mA ICES - 7.5 mA VCE=40 V RTH(JC) - 0.42 °C/W VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Input Power PIN - 11.6 W VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Power Gain GP 7.5 - dB VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Collector Efficiency η 35 - % VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Input Return Loss RL 6 - dB VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz VSWR-T - 2:1 - VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Collector-Emitter Leakage Thermal Resistance Load Mismatch Tolerance Test Conditions Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100µs Pulse, 10% Duty PH3135-65M 8/9/02 Rev. 1 Broadband Test Fixture Impedances TEST FIXTURE INPUT CIRCUIT 50Ω Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50Ω F (GHz) Z IF (Ω) Z OF (Ω) 3.10 8.9 –j11.2 5.2 –j11.0 3.30 8.7 –j8.6 4.2 –j8.8 3.50 8.6 –j6.0 4.7 –j7.0 Test Fixture Assembly M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. 2 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020