MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 Emitter-Base Voltage VEBO 3.0 V IC 27 A Collector Current (Peak) Power Dissipation @ +25°C V PD TBD W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Max Units BVCES 65 - V IC=50mA Test Conditions ICES - 15 mA VCE=36V RTH - .25 (TBD) °C/W Power Output Pout 170 - Wpk VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Power Gain GP 8.5 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Collector Efficiency ηC 40 - % VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Input Return Loss RL 10 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Load Mismatch Stability VSWR-S - 1.5:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Load Mismatch Tolerance VSWR-T - 2:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF (Ω) Z OF (Ω) 2700 (TBD) (TBD) 2800 (TBD) (TBD) 2900 (TBD) (TBD) M/A-COM, RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.