PH2729-150M Radar Pulsed Power Transistor—150 Watts 2.7-2.9 GHz, 100µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Description M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers. It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required. The flanged ceramic package provides for excellent thermal and hermetic properties, which when combined with M/A-COM’s mature transistor fabrication technology results in the highest reliability available. Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Absolute Maximum Rating at 25°C Symbol Rating Units Collector-Emitter Voltage Parameter VCES 65 V Emitter-Base Voltage VEBO 3.0 V IC 15.0 A Collector Current (Peak) Power Dissipation PD 500 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C Min 65 150 8.3 38 10 - Max 7.5 0.4 60 2:1 1.5:1 Units V mA °C/W W dB % dB dBc - Electrical Specifications at 25°C= Symbol BVCES ICES RTH(JC) POUT GP η RL OD-S VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Overdrive Stability (Osc.) Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC = 40 mA VCE = 38 V VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 27.5 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz Specifications subject to change without notice. V 2.0 North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1 Radar Pulsed Power Transistor—150 Watts, 2.7-2.9 GHz, 100µs Pulse, 10% Duty PH2729-150M Test Fixture Matching Circuit Dimensions Circuit Dimensions1 Assembly View 1. PCB Material Rogers 6010.5 .025” Thk. TEST FIXTURE INPUT CIRCUIT 50 Ω Broadband Test Fixture Impedance TEST FIXTURE OUTPUT CIRCUIT Z IF F (GHz) Z IF (Ω) Z OF (Ω) 2.70 2.80 2.90 4.8 – j6.9 4.8 – j6.6 4.8 – j6.4 1.7 – j3.2 1.7 – j2.8 1.7 – j2.4 50 Ω Z OF Typical Performance Curves 10 190 9.5 170 Power Gain (dB) Power Output (Wpk) 210 150 130 2.7 GHz 110 2.8 GHz 90 2.9 GHz 70 12 14 16 18 20 22 24 26 28 8.5 8 Power Gain (dB) 7.5 50 10 9 30 Power Input (Wpk) 7 2.65 Nc (%) 2.7 2.75 2.8 2.85 2.9 50 48 46 44 42 40 38 36 34 32 30 2.95 Collector Efficiency (%) Typical Power Gain and Collector Efficiency Typical Power Transfer vs. Frequency Frequency (GHz) Specifications subject to change without notice. V 2.0 North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2