CHENMKO ENTERPRISE CO.,LTD CHP11VPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE SOT-563 * Small surface mounting type. (SOT-563) * Multiple diodes in one small surface mount package. * Suitable for high packing density. * Maximum total power disspation is 150*2 mW. * Peak forward current is 300mA. (1) (5) 0.50 0.9~1.1 1.5~1.7 0.50 CONSTRUCTION 0.15~0.3 * Silicon epitaxial planar (4) (3) 1.1~1.3 MAKING * 5V 0.5~0.6 0.09~0.18 CIRCUIT (6) (4) (1) (3) 1.5~1.7 Dimensions in millimeters SOT-563 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL CHP11VPT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 80 Volts Maximum RMS Voltage VRMS 56 Volts Maximum DC Blocking Voltage VDC 80 Volts IO 100 mAmps Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. IFSM 4.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 3.5 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec TJ +150 o C -55 to +150 o C Maximum Operating Temperature Range Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL CHP11VPT UNITS Maximum Instantaneous Forward Voltage at IF= 100mA CHARACTERISTICS VF 1.20 Volts Maximum Average Reverse Current at VR= 70V IR 0.1 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts. 2. Measured at applied froward current of 5mA and reverse voltage of 6.0 volts. 3. ESD sensitive product handling required. 2005-5 RATING CHARACTERISTIC CURVES ( CHP11VPT ) FIG. 2 - FORWARD CHARACTERISTICS 50 FORWARD CURRENT, (mA) POWER DISSIPATION:Pd/PdMax, (%) FIG. 1 - POWER DERAING CURVE 125 100 75 50 25 0 20 10 5 Ta=85oC 50oC 25oC 0oC o - 30 C 2 1 0.5 0.2 0.1 25 0 50 75 100 125 150 0 0.2 0.6 0.8 1.0 1.4 1.2 FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - REVERSE CHARACTERISTICS 4 2 1.6 1000 f=1MHz Ta=100oC 100 75oC 10 50oC 25oC 1 0oC 0.1 - 25oC 0.01 0 0 2 4 6 8 10 12 14 16 18 20 20 0 REVERSE VOLTAGE, (V) 30 40 50 60 70 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 10 REVERSE RECOVERY TIME, (nS) 0.4 AMBIENT TEMPERATURE, ( C) REVERSE CURRENT, (nA) JUNCTION CAPACITANCE, (pF) o 0.01µF 9 D.U.T. VR=6V 8 5K 7 PULSE GENERATOR OUTPUT 50 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 FORWARD CURRENT, (mA) 8 9 10 50 SAMPLING OSCILLOSCOPE 80