CHENMKO CHP11VPT

CHENMKO ENTERPRISE CO.,LTD
CHP11VPT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 80 Volts CURRENT 100 mAmpere
APPLICATION
* Ultra high speed switching
FEATURE
SOT-563
* Small surface mounting type. (SOT-563)
* Multiple diodes in one small surface mount package.
* Suitable for high packing density.
* Maximum total power disspation is 150*2 mW.
* Peak forward current is 300mA.
(1)
(5)
0.50
0.9~1.1
1.5~1.7
0.50
CONSTRUCTION
0.15~0.3
* Silicon epitaxial planar
(4)
(3)
1.1~1.3
MAKING
* 5V
0.5~0.6
0.09~0.18
CIRCUIT
(6)
(4)
(1)
(3)
1.5~1.7
Dimensions in millimeters
SOT-563
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
CHP11VPT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
80
Volts
Maximum RMS Voltage
VRMS
56
Volts
Maximum DC Blocking Voltage
VDC
80
Volts
IO
100
mAmps
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
IFSM
4.0
Amps
Typical Junction Capacitance between Terminal (Note 1)
CJ
3.5
pF
Maximum Reverse Recovery Time (Note 2)
TRR
4.0
nSec
TJ
+150
o
C
-55 to +150
o
C
Maximum Operating Temperature Range
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
CHP11VPT
UNITS
Maximum Instantaneous Forward Voltage at IF= 100mA
CHARACTERISTICS
VF
1.20
Volts
Maximum Average Reverse Current at VR= 70V
IR
0.1
uAmps
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts.
2. Measured at applied froward current of 5mA and reverse voltage of 6.0 volts.
3. ESD sensitive product handling required.
2005-5
RATING CHARACTERISTIC CURVES ( CHP11VPT )
FIG. 2 - FORWARD CHARACTERISTICS
50
FORWARD CURRENT, (mA)
POWER DISSIPATION:Pd/PdMax, (%)
FIG. 1 - POWER DERAING CURVE
125
100
75
50
25
0
20
10
5
Ta=85oC
50oC
25oC
0oC
o
- 30 C
2
1
0.5
0.2
0.1
25
0
50
75
100
125
150
0
0.2
0.6
0.8
1.0
1.4
1.2
FORWARD VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 - REVERSE CHARACTERISTICS
4
2
1.6
1000
f=1MHz
Ta=100oC
100
75oC
10
50oC
25oC
1
0oC
0.1
-
25oC
0.01
0
0
2
4
6
8
10
12
14
16
18
20
20
0
REVERSE VOLTAGE, (V)
30
40
50
60
70
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
10
REVERSE RECOVERY TIME, (nS)
0.4
AMBIENT TEMPERATURE, ( C)
REVERSE CURRENT, (nA)
JUNCTION CAPACITANCE, (pF)
o
0.01µF
9
D.U.T.
VR=6V
8
5K
7
PULSE GENERATOR
OUTPUT 50
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
FORWARD CURRENT, (mA)
8
9
10
50
SAMPLING
OSCILLOSCOPE
80