Preliminary Specifications GaAs MMIC Power Amplifier 2 - 6 GHz MAAM26100-P1 V1.A CR-15 Features ● ● ● ● ● ● +30 dBm Saturated Output Power 18 dB Typical Gain 30% Power Added Efficiency On-Chip Bias Network DC Decoupled RF Input and Output High Performance Ceramic Bolt Down Package -C- .70 .530 4X .06 X 45° CHAMFER .085 10 9 10X .050 MIN 8 7 6 -B- .328 ±.010 .159 .318 ±.010 Description M/A-COM’s MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which eliminates the need for external bias circuitry. 2X 1 2 .010 SQ. ORIENTATION TAB 4 5 3 Ø .096 Ø THRU .004 M A B C 10X .010 ±.003 .115 ±.010 4X .050 4X .100 .33 .005 ±.002 CERAMIC .040 .090 MAX -A- The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in Electronic Warfare Jammers, Missile Subsystems and Phased Array Radars. BASE PLATE .020 Notes: (unless otherwise specified) 1. Dimensions are inches. 2. Tolerance: in .xxx = ±.010 M/A-COM’s MAAM26100-P1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. Ordering Information Part Number Package MAAM26100-P1 Ceramic Bolt Down Typical Electrical Specifications, TA = +25°C , VDD = +8 V, VGG = -5 V Parameter Test Conditions Units Small Signal Gain PIN ≤ -10 dBm 2 - 6 GHz Input VSWR PIN ≤ -10 dBm 2 - 6 GHz 2.0:1 Output VSWR PIN ≤ -10 dBm 2 - 6 GHz 2.2:1 Output Power PIN = +15 dBm 2 - 6 GHz dBm +30 Power Added Efficiency PIN = +15 dBm 2 - 6 GHz % 30 dBm 40 2, 5 & 6 GHz Output IP3 Min. dB Typ. Max. 18 The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. M/A-COM, Inc. North America: 1 Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 GaAs MMIC Power Amplifier MAAM 26100-P1 V1.A Functional Diagram3,4 Absolute Maximum Ratings1, 2 Parameter Absolute Maximum VDD VGG Power Dissipation RF Input Power Channel Temperature Storage Temperature Thermal Resistance (Channel to Case) VDD 0.01uF 10 Volts -10 Volts 8.4 W +23 dBm 150°C -65°C to +150°C 15°C/W 10 IN OUT MAAM26100-P1 8 3 6 VGG 1. Exceeding these limits may cause permanent damage. 2. Case Temperature (Tc) = +25°C GND 1,2,4,5,7,9 3. Nominal bias is obtained by first connecting -5 volts to pin 6 (VGG),followed by connecting +9 volts to pin 10 (VDD). Note sequence. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. Typical Performance @+25°C GAIN vs FREQUENCY VSWR vs FREQUENCY 2.0 22 Linear 1.8 18 at PIN = +15dBm VSWR S21 (dB) 20 16 1.6 S22 1.4 14 1.2 12 10 S11 1.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 OUTPUT POWER vs FREQUENCY @ PIN = +15 dBm 4.0 4.5 5.0 5.5 6.0 POWER ADDED EFFICIENCY vs FREQUENCY @ PIN = +15 dBm 35 35 30 30 PAE (%) POUT (dBm) 3.5 FREQUENCY (GHz) FREQUENCY (GHz) 25 20 15 25 20 15 10 10 2.0 3.0 4.0 5.0 6.0 2.0 2.5 FREQUENCY (GHz) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. M/A-COM, Inc. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020