RO-P-DS-3070 MAAPGM0034 0.5W X/Ku-Band Power Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ ♦ 8.0-12.0 GHz Operation 0.5 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG ® MESFET Process High Performance Ceramic Bolt Down Package APGM0034 YWWLLLL Primary Applications ♦ Point-to-Point Radio ♦ Weather Radar ♦ Airborne Radar Description Pin Number Description The MAAPGM0034 is a packaged, 2-stage, 0.5 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. 1 No Connection 2 No Connection 3 RF IN 4 No Connection Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG ®) MESFET Process. Maximum Operating Conditions Parameter 5 V GG 6 No Connection 7 No Connection 8 RF OUT 9 No Connection 10 V DD 1 Symbol Absolute Maximum Units Input Power PIN 21.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 150 mA PDISS 1.5 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) 1. Operation outside of these ranges may reduce product reliability. RO-P-DS-3070 0.5W X/Ku-Band Power Amplifier 2/6 MAAPGM0034 Recommended Operating Conditions Min Typ Max Unit Drain Supply Voltage Characteristic Symbol VDD 4.0 8.0 10.0 V Gate Supply Voltage VGG -2.3 -2.0 -1.5 V 16.0 19.0 dBm 150 °C Input Power PIN Junction Temperature TJ Thermal Resistance T JC MMIC Base Temperature TB 58.6 °C/W Note 2 °C 2. Maximum MMIC Base Temperature = 150°C — T JC* VDD * IDQ Electrical Characteristics: TB = 40°C3, Z0 = 50 Ω, V DD = 10V, V GG = -1.8V, Pin = 16 dBm, R G = 604O Parameter Symbol Typical Units Bandwidth f 8.0-12.0 GHz Output Power POUT 27.5 dBm Power Added Efficiency PAE 30 % 1-dB Compression Point P1dB 27 dBm Small Signal Gain G 14.5 dB Input VSWR VSWR 2.5:1 Output VSWR VSWR 2.5:1 Gate Supply Current IGG <2 mA Drain Supply Current IDD < 200 mA Noise Figure NF 8.5 dB 2nd Harmonic 2f -28 dBc 3rd 3f -35 dBc Output Third Order Intercept OTOI 33 dBm 3rd Order Intermodulation Distortion, Single Carrier Level = 17 dBm IM3 -13 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 17 dBm IM5 -36 dBm Harmonic 3. T B = MMIC Base Temperature Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -1.8 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (approxmately @ –1.8V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. 3/6 RO-P-DS-3070 0.5W X/Ku-Band Power Amplifier MAAPGM0034 50 50 PAE 40 40 30 30 20 20 10 10 0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 PAE(%) POUT (dBm) POUT 0 12.5 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 10V and Pin = 16 dBm. 50 50 POUT 40 30 30 20 20 10 10 PAE(%) POUT (dBm) PAE 40 0 0 4 5 6 7 8 9 10 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 10 GHz. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. 4/6 RO-P-DS-3070 0.5W X/Ku-Band Power Amplifier MAAPGM0034 40 35 P1dB (dBm) 30 25 20 15 10 VDD = 4 VDD = 6 VDD = 8 VDD = 10 5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 25 6 Gain Input VSWR 20 5 15 4 10 3 5 2 0 1 VSWR Gain (dB) Output VSWR 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 10V. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3070 0.5W X/Ku-Band Power Amplifier 5/6 MAAPGM0034 APGM0034 Figure 5. CR-15 Package Dimensions The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3070 0.5W X/Ku-Band Power Amplifier 6/6 MAAPGM0034 Figure 6. Recommended Bias Configuration 100 pF VDD 0.1 µF APGM0034 YWWLLLL RFIN RFOUT 604 O V GG 100 pF 0.1 µF Pin Number Description 1 No Connection 2 No Connection 3 RF IN 4 No Connection 5 V GG 6 No Connection 7 No Connection 8 RF OUT 9 No Connection 10 V DD Assembly Instructions: This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. * Application Notes can be found by going to the Site Search Page on M/A-COM’s web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information.