CYStech Electronics Corp. Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description • The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Excellent hFE linearity • Complementary to BTC4081S3. Symbol Outline BTA1576S3 SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTA1576S3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg -60 -50 -6 -150 225 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -60 -50 -6 120 60 - Typ. -0.2 140 4.0 Max. -0.1 -0.1 -0.5 820 5.0 Unit V V V uA uA V MHz pF Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range BTA1576S3 Q 120-270 R 180-390 S 270-560 T 410-820 CYStek Product Specification Spec. No. : C306S3 Issued Date : 2002.05.11 CYStech Electronics Corp. Revised Date : 2002.11.26 Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=6V 100 10 VCE(SAT)@IC=10IB 100 10 0.1 1 10 100 1000 0.1 Collector Current---IC(mA) 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current Cutoff Frequency---FT(GHZ) 1 Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB 100 FT@VCE=12V 0.1 0.1 1 10 100 1000 Collector Current---IC(mA) 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTA1576S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 4/4 SOT-323 Dimension Marking: 3 A Q A1 1 C TE A4 Lp 2 detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v A 2 mm 1 Style: Pin 1.Base 2.Emitter 3.Collector scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1576S3 CYStek Product Specification