Spec. No. : C305N3-H Issued Date : 2003.06.13 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP4403N3 Description • The BTP4403N3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA. Ideal for low-Voltage operation • Complementary to BTN4401N3. Symbol Outline BTP4403N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTP4403N3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg -40 -40 -5 -0.6 225 556 150 -55~+150 V V V A mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C305N3-H Issued Date : 2003.06.13 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 *hFE 4 *hFE 5 fT Cob Min. -40 -40 -5 -0.75 30 60 100 82 20 200 - Typ. - Max. -0.1 -0.4 -0.75 -0.95 -1.3 390 8.5 Unit V V V µA V V V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-100µA VCE=-35V, VEB=-0.4V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA VCE=-10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 4 Rank Range BTP4403N3 P 82~180 Q 120~270 R 180~390 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C305N3-H Issued Date : 2003.06.13 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 HFE@VCE=3V Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE(SAT)@IC=10IB 100 10 10 0.1 1 10 100 1 1000 10 100 1000 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1 FT@VCE=5V Cutoff Frequency-FT(GHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB 0.1 100 0.1 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTP4403N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C305N3-H Issued Date : 2003.06.13 Revised Date : Page No. : 4/4 SOT-23 Dimension Marking: A L 3 B TE 2T S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP4403N3 CYStek Product Specification