Spec. No. : C203N3-H Issued Date : 2003.06.06 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN4401N3 Description • The BTN4401N3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , IC = 0.6A • Low VCE(sat) , VCE(sat) = 0.2V(typ.) at IC/IB = 500mA/50mA Optimal for low Voltage operation • Complementary to BTP4403N3. Symbol Outline BTN4401N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTN4401N3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 60 40 6 0.6 225 150 -55~+150 V V V A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 60 40 6 20 40 80 82 40 - Typ. 0.2 250 6 Max. 100 0.4 0.75 0.95 1.2 390 - Unit V V V nA V V V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCE=35V, VBE=-0.4V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE4 Rank Range P 82~180 Q 120~270 R 180~390 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=3V 100 10 100 10 0.1 1 10 100 Collector Current ---IC(mA) BTN4401N3 VCE(SAT)@IC=10IB 1000 1 10 100 1000 Collector Current ---IC(mA) CYStek Product Specification Spec. No. : C203N3-H Issued Date : 2003.06.06 CYStech Electronics Corp. Saturation Voltage vs Collector Current Revised Date : Page No. : 3/4 Cutoff Frequency vs Collector Current 1000 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) FT@VCE=5V VBE(SAT)@IC=10IB 100 0.1 0.1 1 10 100 1000 Collector Current--- IC(mA) 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 BTN4401N3 50 100 150 Ambient Temperature --- Ta( ℃ ) 200 CYStek Product Specification Spec. No. : C203N3-H Issued Date : 2003.06.06 CYStech Electronics Corp. Revised Date : Page No. : 4/4 SOT-23 Dimension A L Marking: 3 B S TE 2X 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN4401N3 CYStek Product Specification