VISHAY BYS11

BYS11-90
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
90 V
IFSM
40 A
VF
0.75 V
MECHANICAL DATA
Case: DO-214AC (SMA)
TJ max.
150 °C
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYS11-90
UNIT
BYS
109
Device marking code
Maximum repetitive peak reverse voltage
VRRM
90
V
Maximum average forward rectified current
IF(AV)
1.5
A
IFSM
40
30
A
dV/dt
10 000
V/µs
TJ, TSTG
- 55 to + 150
°C
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Junction and storage temperature range
Document Number: 86014
Revision: 21-Jan-08
8.3 ms
10 ms
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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BYS11-90
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage (1)
1.0 A
Maximum DC reverse current (1)
VRRM
TJ = 25 °C
TJ = 100 °C
SYMBOL
BYS11-90
UNIT
VF
750
mV
IR
100
1
µA
mA
SYMBOL
BYS11-90
UNIT
RθJL
25
°C/W
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance - junction lead
(1)
Maximum thermal resistance - junction ambient
150
125 (2)
100 (3)
RθJA
°C/W
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYS11-90-E3/TR
0.064
TR
1800
7" diameter plastic tape and reel
0.064
TR3
7500
13" diameter plastic tape and reel
0.064
TR
1800
7" diameter plastic tape and reel
0.064
TR3
7500
13" diameter plastic tape and reel
BYS11-90-E3/TR3
BYS11-90HE3/TR
(1)
BYS11-90HE3/TR3 (1)
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
2.0
Forward Current (A)
1
0.1
TJ = 25 °C
0.01
Average Forward Current (A)
VR = VRRM, Half Sine-Wave, RthJA = 25 K/W
TJ = 150 °C
1.6
1.2
0.8
0.4
0
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
40
80
120
160
200
Forward Voltage (V)
Ambient Temperature (°C)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86014
Revision: 21-Jan-08
BYS11-90
Vishay General Semiconductor
2.0
Max. Reverse Power Dissipation (W)
2.0
Average Forward Current (A)
VR = 0 V, Half Sine-Wave
1.6
RthJA = 25 K/W
1.2
100 K/W
0.8
125 K/W
0.4
150 K/W
0
RthJA = 25 K/W
1.6
100 K/W
1.2
0.8
0.4
VR = VRRM
0
0
40
80
120
160
200
0
40
80
120
100
200
Ambient Temperature (°C)
Junction Temperature (°C)
Figure 3. Max. Average Forward Currentvs. Ambient Temperature
Figure 5. Max Reverse Power Dissipation vs. Junction Temperature
1000
180
Diode Capacitance (pF)
Reverse Current (mA)
f = 1 MHz
160
VR = VRRM
100
10
1
140
120
100
80
60
40
20
0.1
0
0
40
80
120
160
200
0.1
1
10
100
Junction Temperature (°C)
Reverse Voltage (V)
Figure 4. Reverse Current vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 86014
Revision: 21-Jan-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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