CYPRESS CY62167EV30LL

CY62167EV30 MoBL®
16-Mbit (1M x 16 / 2M x 8) Static RAM
Features
■
TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM
■
Very High Speed: 45 ns
■
Temperature Ranges
❐ Industrial: –40°C to +85°C
❐ Automotive-A: –40°C to +85°C
■
Wide Voltage Range: 2.20V to 3.60V
■
Ultra Low Standby Power
❐ Typical standby current: 1.5 μA
❐ Maximum standby current: 12 μA
■
Ultra Low Active Power
❐ Typical active current: 2.2 mA at f = 1 MHz
■
Easy Memory Expansion with CE1, CE2, and OE Features
■
Automatic Power Down when Deselected
■
CMOS for Optimum Speed and Power
■
Offered in Pb-free 48-Ball VFBGA and 48-Pin TSOP I
Packages
Functional Description
The CY62167EV30 is a high performance CMOS static RAM
organized as 1M words by 16 bits or 2M words by 8 bits. This
device features an advanced circuit design that provides an ultra
Logic Block Diagram
low active current. Ultra low active current is ideal for providing
More Battery Life™ (MoBL®) in portable applications such as
cellular telephones. The device also has an automatic power
down feature that reduces power consumption by 99 percent
when addresses are not toggling. Place the device into standby
mode when deselected (CE1 HIGH or CE2 LOW or both BHE and
BLE are HIGH). The input and output pins (I/O0 through I/O15)
are placed in a high impedance state when: the device is
deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE
HIGH), both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH), or a write operation is in progress (CE1 LOW,
CE2 HIGH and WE LOW).
To write to the device, take Chip Enables (CE1 LOW and CE2
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is
written into the location specified on the address pins (A0 through
A19). If Byte High Enable (BHE) is LOW, then data from the I/O
pins (I/O8 through I/O15) is written into the location specified on
the address pins (A0 through A19).
To read from the device, take Chip Enables (CE1 LOW and CE2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appears
on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O8 to I/O15. See the “Truth Table” on
page 9 for a complete description of read and write modes.
For best practice recommendations, refer to the Cypress
application note AN1064, SRAM System Guidelines.
1M × 16 / 2M x 8
RAM Array
SENSE AMPS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
ROW DECODER
DATA IN DRIVERS
IO0–IO7
IO8–IO15
COLUMN DECODER
Power Down
Circuit
A11
A12
A13
A14
A15
A16
A17
A18
A19
CE2
CE1
BHE
•
198 Champion Court
CE2
OE
CE1
BLE
BLE
Cypress Semiconductor Corporation
Document #: 38-05446 Rev. *F
BYTE
BHE
WE
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 17, 2009
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CY62167EV30 MoBL®
Pin Configuration
Figure 1. 48-Ball VFBGA (6 x 7 x 1mm) / (6 x 8 x 1mm) Top View [1, 2, 3]
1
2
3
4
5
6
BLE
OE
A0
A1
A2
CE2
A
I/O8
BHE
A3
A4
CE1
I/O0
B
I/O9
I/O10
A5
A6
I/O1
I/O2
C
VSS
I/O11
A17
A7
I/O3
VCC
D
VCC
I/O12
NC
A16
I/O4
Vss
E
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O15
A19
A12
A13
WE
I/O7
G
A18
A8
A9
A10
A11
NC
H
Figure 2. 48-Pin TSOP I Top View [3, 4]
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CE2
NC
BHE
BLE
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
Vss
IO15/A20
IO7
IO14
IO6
IO13
IO5
IO12
IO4
Vcc
IO11
IO3
IO10
IO2
IO9
IO1
IO8
IO0
OE
Vss
CE1
A0
Product Portfolio
Power Dissipation
Product
Range
VCC Range (V)
Speed
(ns)
Operating ICC (mA)
f = 1 MHz
CY62167EV30LL
Industrial/Auto-A
Min
Typ[5]
Max
2.2
3.0
3.6
45
f = fmax
Standby ISB2
(μA)
Typ[5]
Max
Typ[5]
Max
Typ[5]
Max
2.2
4.0
25
30
1.5
12
Notes
1. The information related to 6 x 7 x 1 mm VFBGA package is preliminary.
2. Ball H6 for the VFBGA package can be used to upgrade to a 32M density.
3. NC pins are not connected on the die.
4. The BYTE pin in the 48-TSOPI package has to be tied to VCC to use the device as a 1M X 16 SRAM. The 48-TSOPI package can also be used as a 2M X 8 SRAM
by tying the BYTE signal to VSS. In the 2M x 8 configuration, Pin 45 is A20, while BHE, BLE and IO8 to IO14 pins are not used.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
Document #: 38-05446 Rev. *F
Page 2 of 14
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CY62167EV30 MoBL®
DC Input Voltage[6, 7] ...........–0.3V to 3.9V (VCC(max) + 0.3V
Maximum Ratings
Output Current into Outputs (LOW) ............................ 20 mA
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Storage Temperature ................................ –65°C to + 150°C
Latch up Current...................................................... >200 mA
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Operating Range
Supply Voltage to Ground
Potential .................................–0.3V to 3.9V VCC(max) + 0.3V
Device
Range
DC Voltage Applied to Outputs
in High Z State[6, 7]..................–0.3V to 3.9V VCC(max) + 0.3V
CY62167EV30LL
Industrial/
Auto-A
Ambient
Temperature
VCC[8]
–40°C to +85°C 2.2V to 3.6V
Electrical Characteristics
Over the Operating Range
Parameter
VOH
Description
Output HIGH Voltage
Test Conditions
45 ns (Industrial/Auto-A)
Min
Typ[5]
Unit
Max
2.2 < VCC < 2.7
IOH = –0.1 mA
2.0
V
2.7 < VCC < 3.6
IOH = –1.0 mA
2.4
V
VOL
Output LOW Voltage
2.2 < VCC < 2.7
IOL = 0.1 mA
2.7 < VCC < 3.6
IOL = 2.1mA
0.4
V
VIH
Input HIGH Voltage
2.2 < VCC < 2.7
1.8
VCC + 0.3V
V
2.7 < VCC < 3.6
2.2
VCC + 0.3V
V
2.2 < VCC < 2.7
–0.3
0.6
V
VIL
Input LOW Voltage
2.7 < VCC < 3.6
0.4
V
For VFBGA package
–0.3
0.8
V
For TSOP I package
–0.3
0.7[9]
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
μA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
–1
+1
μA
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC
VCC = VCC(max)
IOUT = 0 mA
CMOS levels
f = 1 MHz
25
30
mA
2.2
4.0
mA
ISB1
Automatic CE Power Down
Current—CMOS Inputs
CE1 > VCC − 0.2V or CE2 < 0.2V
VIN > VCC − 0.2V, VIN < 0.2V,
f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE and BLE), VCC = 3.60V
1.5
12
μA
ISB2[10]
Automatic CE Power Down
Current—CMOS Inputs
CE1 > VCC − 0.2V or CE2 < 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
1.5
12
μA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
Max
Unit
10
pF
10
pF
Notes
6. VIL(min) = –2.0V for pulse durations less than 20 ns.
7. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full Device AC operation assumes a 100 μs ramp time from 0 to VCC (min) and 200 μs wait time after VCC stabilization.
9. Under DC conditions the device meets a VIL of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V. This is
applicable to TSOP I package only.
10. Only chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating
Document #: 38-05446 Rev. *F
Page 3 of 14
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CY62167EV30 MoBL®
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
VFBGA
VFBGA
(6 x 7 x 1mm) (6 x 8 x 1mm)
Test Conditions
TSOP I
Unit
ΘJA
Thermal Resistance Still Air, soldered on a 3 × 4.5 inch,
(Junction to Ambient) two-layer printed circuit board
27.74
55
60
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
9.84
16
4.3
°C/W
Shaded areas contain preliminary information.
Figure 3. AC Test Loads and Waveforms
R1
VCC
OUTPUT
VCC
GND
30 pF
R2
10%
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Rise Time = 1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to: THÉVENIN EQUIVALENT
RTH
OUTPUT
V
Parameters
2.2V to 2.7V
2.7V to 3.6V
Unit
R1
16667
1103
Ω
R2
15385
1554
Ω
RTH
8000
645
Ω
VTH
1.20
1.75
V
Data Retention Characteristics
Over the Operating Range
Parameter
Description
VCC for Data Retention
VDR
ICCDR[10] Data Retention Current
Conditions
VCC = 1.5V to 3.0V, CE1 > VCC − 0.2V, CE2 Industrial/ -45ZXI
Auto-A (TSOP I)
< 0.2V, VIN > VCC − 0.2V or VIN < 0.2V
Min Typ[5] Max
1.5
8
VCC = 1.5V, CE1 > VCC − 0.2V, CE2 < 0.2V, Industrial -45BAXI/
-45BVXI/
VIN > VCC − 0.2V or VIN < 0.2V
-45BVI
(VFBGA)
tCDR[11]
Chip Deselect to Data
Retention Time
Operation Recovery Time
tR[12]
10
Unit
V
μA
μA
0
ns
tRC
ns
Figure 4. Data Retention Waveform
VCC
VCC(min)
tCDR
DATA RETENTION MODE
VDR > 1.5 V
VCC(min)
tR
CE1 or
BHE.BLE
[13]
or
CE2
Notes
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.
13. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.
Document #: 38-05446 Rev. *F
Page 4 of 14
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CY62167EV30 MoBL®
Switching Characteristics
Over the Operating Range[14, 15]
Parameter
Description
45 ns (Industrial/Auto-A)
Min
Max
Unit
READ CYCLE
tRC
Read Cycle Time
45
ns
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE1 LOW and CE2 HIGH to Data Valid
45
ns
tDOE
OE LOW to Data Valid
22
ns
18
ns
45
10
[16]
tLZOE
OE LOW to LOW Z
tHZOE
OE HIGH to High Z[16, 17]
tLZCE
CE1 LOW and CE2 HIGH to Low Z[16]
ns
5
tHZCE
CE1 HIGH and CE2 LOW to High
ns
10
Z[16, 17]
ns
ns
18
ns
tPU
CE1 LOW and CE2 HIGH to Power Up
tPD
CE1 HIGH and CE2 LOW to Power Down
45
ns
tDBE
BLE / BHE LOW to Data Valid
45
ns
tLZBE
tHZBE
BLE / BHE LOW to Low
Z[16]
BLE / BHE HIGH to HIGH
0
ns
10
Z[16, 17]
ns
18
ns
WRITE CYCLE[18]
tWC
Write Cycle Time
45
ns
tSCE
CE1 LOW and CE2 HIGH to Write End
35
ns
tAW
Address Setup to Write End
35
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Setup to Write Start
0
ns
tPWE
WE Pulse Width
35
ns
tBW
BLE / BHE LOW to Write End
35
ns
tSD
Data Setup to Write End
25
ns
tHD
Data Hold from Write End
0
ns
tHZWE
tLZWE
WE LOW to
High-Z[16, 17]
WE HIGH to
Low-Z[16]
18
10
ns
ns
Notes
14. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 V/ns, timing reference levels of VCC(typ)/2, input pulse levels of 0
to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 4.
15. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.
16. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.
17. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.
18. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a
write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must refer to the edge of the signal that terminates the write.
Document #: 38-05446 Rev. *F
Page 5 of 14
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CY62167EV30 MoBL®
Switching Waveforms
Figure 5 shows address transition controlled read cycle waveforms.[19, 20]
Figure 5. Read Cycle No. 1
tRC
RC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Figure 6 shows OE controlled read cycle waveforms.[20, 21]
Figure 6. Read Cycle No. 2
ADDRESS
tRC
CE1
tPD
tHZCE
CE2
tACE
BHE/BLE
tDBE
tHZBE
tLZBE
OE
tHZOE
tDOE
DATA OUT
tLZOE
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
tPU
50%
50%
ICC
ISB
Notes
19. The device is continuously selected. OE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH.
20. WE is HIGH for read cycle.
21. Address valid before or similar to CE1, BHE, BLE transition LOW and CE2 transition HIGH.
Document #: 38-05446 Rev. *F
Page 6 of 14
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CY62167EV30 MoBL®
Switching Waveforms (continued)
Figure 7 shows WE controlled write cycle waveforms.[18, 22, 23]
Figure 7. Write Cycle No. 1
tWC
ADDRESS
tSCE
CE1
CE2
tAW
tHA
tSA
WE
tPWE
tBW
BHE/BLE
OE
tHD
tSD
DATA I/O
NOTE 24
VALID DATA
tHZOE
Notes
22. Data IO is high impedance if OE = VIH.
23. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
24. During this period the I/Os are in output state. Do not apply input signals.
Document #: 38-05446 Rev. *F
Page 7 of 14
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CY62167EV30 MoBL®
Switching Waveforms (continued)
Figure 8 shows CE1 or CE2 controlled write cycle waveforms.[18, 22, 23]
Figure 8. Write Cycle No. 2
tWC
ADDRESS
tSCE
CE1
CE2
tSA
tAW
tHA
tPWE
WE
tBW
BHE/BLE
OE
DATA I/O
tHD
tSD
NOTE 24
VALID DATA
tHZOE
Figure 9 shows WE controlled, OE LOW write cycle waveforms.[23]
Figure 9. Write Cycle No. 3
tWC
ADDRESS
tSCE
CE1
CE2
tBW
BHE/BLE
tAW
tSA
tHA
tPWE
WE
tSD
DATA I/O
NOTE 24
VALID DATA
tHZWE
Document #: 38-05446 Rev. *F
tHD
tLZWE
Page 8 of 14
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CY62167EV30 MoBL®
Switching Waveforms (continued)
Figure 10 shows BHE/BLE controlled, OE LOW write cycle waveforms.[23]
Figure 10. Write Cycle No. 4
tWC
ADDRESS
CE1
CE2
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tSD
NOTE 24
DATA IO
tHD
VALID DATA
Truth Table
CE1
CE2
WE
OE
Mode
Power
H
X
X
X
BHE BLE
X
X
High Z
Inputs/Outputs
Deselect / Power Down
Standby (ISB)
X
L
X
X
X
X
High Z
Deselect / Power Down
Standby (ISB)
X
X
X
X
H
H
High Z
Deselect / Power Down
Standby (ISB)
L
H
H
L
L
L
Data Out (I/O0–I/O15)
Read
Active (ICC)
L
H
H
L
H
L
Data Out (I/O0–I/O7);
High Z (I/O8–I/O15)
Read
Active (ICC)
L
H
H
L
L
H
High Z (I/O0–I/O7);
Data Out (I/O8–I/O15)
Read
Active (ICC)
L
H
H
H
L
H
High Z
Output Disabled
Active (ICC)
L
H
H
H
H
L
High Z
Output Disabled
Active (ICC)
L
H
H
H
L
L
High Z
Output Disabled
Active (ICC)
L
H
L
X
L
L
Data In (I/O0–I/O15)
Write
Active (ICC)
L
H
L
X
H
L
Data In (I/O0–I/O7);
High Z (I/O8–I/O15)
Write
Active (ICC)
L
H
L
X
L
H
High Z (I/O0–I/O7);
Data In (I/O8–I/O15)
Write
Active (ICC)
Document #: 38-05446 Rev. *F
Page 9 of 14
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CY62167EV30 MoBL®
Ordering Information
Speed
(ns)
45
Ordering Code
CY62167EV30LL-45BAXI
Package
Diagram
Package Type
001-13297 48-ball VFBGA (6 x 7 x 1 mm) (Pb-free)
CY62167EV30LL-45BVI
51-85150
48-ball VFBGA (6 x 8 x 1 mm)
CY62167EV30LL-45BVXI
51-85150
48-ball VFBGA (6 x 8 x 1 mm) (Pb-free)
CY62167EV30LL-45ZXI
51-85183
48-pin TSOP I (Pb-free)
CY62167EV30LL-45BVXA
51-85150
48-ball VFBGA (6 x 8 x 1 mm) (Pb-free)
CY62167EV30LL-45ZXA
51-85183
48-pin TSOP I (Pb-free)
Operating
Range
Industrial
Automotive-A
Shaded areas contain preliminary information. Contact your local Cypress sales representative for availability of these parts.
Package Diagrams
Figure 11. 48-Ball VFBGA (6 x 7 x 1 mm), 001-13297
NOTES:
1. ALL DIMENSION ARE IN MM [MAX/MIN]
2. JEDEC REFERENCE : MO-216
3. PACKAGE WEIGHT : 0.03g
Document #: 38-05446 Rev. *F
001-13297-*A
Page 10 of 14
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CY62167EV30 MoBL®
Package Diagrams (continued)
Figure 12. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150
BOTTOM VIEW
TOP VIEW
A1 CORNER
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.30±0.05(48X)
2
3
4
5
6
6
5
4
3
2
1
C
C
E
F
G
D
E
2.625
D
0.75
A
B
5.25
A
B
8.00±0.10
8.00±0.10
1
F
G
H
H
A
1.875
A
B
0.75
6.00±0.10
3.75
0.55 MAX.
6.00±0.10
0.10 C
0.21±0.05
0.25 C
B
0.15(4X)
Document #: 38-05446 Rev. *F
1.00 MAX
0.26 MAX.
SEATING PLANE
C
51-85150-*D
Page 11 of 14
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CY62167EV30 MoBL®
Package Diagrams (continued)
Figure 13. 48-Pin TSOP I (12 mm x 18.4 mm x 1.0 mm), 51-85183
DIMENSIONS IN INCHES[MM] MIN.
MAX.
JEDEC # MO-142
0.037[0.95]
0.041[1.05]
N
1
0.020[0.50]
TYP.
0.472[12.00]
0.007[0.17]
0.011[0.27]
0.002[0.05]
0.006[0.15]
0.724 [18.40]
0.047[1.20]
MAX.
SEATING PLANE
0.004[0.10]
0.787[20.00]
0.004[0.10]
0.008[0.21]
0.010[0.25]
GAUGE PLANE
0°-5°
0.020[0.50]
0.028[0.70]
51-85183-*A
Document #: 38-05446 Rev. *F
Page 12 of 14
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CY62167EV30 MoBL®
Document History Page
Document Title: CY62167EV30 MoBL® 16-Mbit (1M x 16 / 2M x 8) Static RAM
Document Number: 38-05446
REV.
ECN NO.
Orig. of
Change
Submission
Date
**
202600
AJU
01/23/2004
*A
463674
NXR
See ECN
Converted from Advance Information to Preliminary
Removed ‘L’ bin and 35 ns speed bin from product offering
Modified Data sheet to include x8 configurability.
Changed ball E3 in FBGA pinout from DNU to NC
Changed the ISB2(Typ) value from 1.3 μA to 1.5 μA
Changed the ICC(Max) value from 40 mA to 25 mA
Changed Vcc stabilization time in footnote #9 from 100 µs to 200 µs
Changed the AC Test Load Capacitance value from 50 pF to 30 pF
Corrected typo in Data Retention Characteristics (tR) from 100 µs to tRC ns
Changed tOHA, tLZCE, tLZBE, and tLZWE from 6 ns to 10 ns
Changed tLZOE from 3 ns to 5 ns.
Changed tHZOE, tHZCE, tHZBE, and tHZWE from 15 ns to 18 ns
Changed tSCE, tAW, and tBW from 40 ns to 35 ns
Changed tPE from 30 ns to 35 ns
Changed tSD from 20 ns to 25 ns
Updated 48 ball FBGA Package Information.
Updated the Ordering Information table
*B
469169
NSI
See ECN
Minor Change: Moved to external web
*C
1130323
VKN
See ECN
Converted from preliminary to final
Changed ICC max spec from 2.8 mA to 4.0 mA for f=1MHz
Changed ICC typ spec from 22 mA to 25 mA for f=fmax
Changed ICC max spec from 25 mA to 30 mA for f=fmax
Added VIL spec for TSOP I package and footnote# 9
Added footnote# 10 related to ISB2 and ICCDR
Changed ISB1 and ISB2 spec from 8.5 μA to 12 μA
Changed ICCDR spec from 8 μA to 10 μA
Added footnote# 15 related to AC timing parameters
*D
1323984
VKN/AESA
See ECN
Modified ICCDR spec for TSOP I package
Added 48-Ball VFBGA (6 x 7 x 1mm) package
Added footnote# 1 related to VFBGA (6 x 7 x 1mm) package
Updated Ordering Information table
*E
2678799
VKN/PYRS
03/25/2009
Added Automotive-A information
*F
2720234
VKN/AESA
06/17/2009
Included -45BVXA part in the Ordering information table
Document #: 38-05446 Rev. *F
Description of Change
New Data Sheet
Page 13 of 14
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Document #: 38-05446 Rev. *F
Revised June 17, 2009
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