DG458/459 Vishay Siliconix Fault-Protected Single 8-Ch/Differential 4-Ch Analog Multiplexers DESCRIPTION FEATURES The DG458 and DG459 are 8-channel single-ended and • Fault and Overvoltage Protection 4-channel differential analog multiplexers, respectively, • All Channels Off When Power Off incorporating fault protection. A series n-p-n MOSFET • Latchup-Proof structure provides device and signal-source protection in the • Fast Switching - TA: 200 ns event of power loss or overvoltages. Under fault conditions • Break-Before-Make Switching the multiplexer input (or output) appears as an open circuit • Low On-Resistance: 180 Ω and only a few nanoamperes of leakage current will flow. • Low Power Consumption: 3 mW This protects not only the multiplexer and the circuitry • TTL and CMOS Compatible Inputs Pb-free Available RoHS* COMPLIANT following it, but also protects the sensors or signal sources BENEFITS which drive the multiplexer. The DG458 and DG459 can withstand continuous overvoltage inputs up to ± 35 V. All digital inputs have TTL compatible logic thresholds. Break-before-make operation prevents channel-to-channel interference. • • • • • • Improved Ruggedness Power Loss Protection Prevents Adjacent Channel Crosstalk Standard Logic Interface Superior Accuracy Fast Settling Time The DG458 and DG459 are improved pin-compatible replacements for HI-508A/509A and MAX358/359 APPLICATIONS • • • • • multiplexers. Data Acquisition Systems Industrial Process Control Systems Avionics Test Equipment High-Rel Control Systems Telemetry FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG459 DG458 Dual-In-Line Dual-In-Line A0 EN VS1 S2 S3 S4 D 16 1 2 Decoders/Drivers 15 3 14 4 13 5 12 6 11 7 10 8 9 A1 A0 A2 EN GND V- V+ S1a S5 S2a S6 S3a S7 S4a S8 Da Top View 16 1 2 Decoders/Drivers 15 3 14 4 13 5 12 6 11 7 10 8 9 A1 GND V+ S1b S2b S3b S4b Db Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70064 S-71155–Rev. G, 11-Jun-07 www.vishay.com 1 DG458/459 Vishay Siliconix THRU TABLES AND ORDERING INFORMATION TRUTH TABLE - DG458 TRUTH TABLE - DG459 A2 A1 A0 EN On Switch A1 A0 EN On Switch X X X 0 None X X 0 None 0 0 0 1 1 0 0 1 1 0 0 1 1 2 0 1 1 2 0 1 0 1 3 1 0 1 3 0 1 1 1 4 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 Logic "0" = VAL ≤ 0.8 V Logic "1" = VAH ≥ 2.4 V X = Don’t Care ORDERING INFORMATION Temp Range Package Part Number DG458DJ DG458DJ-E3 - 40 to 85 °C 16-Pin Plastic DIP DG459DJ DG459DJ-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit V+ to V- Unit 44 V+ to GND 22 V- to GND VEN, VA Digital Input - 25 (V-) - 4 to (V+) + 4 VS, Analog Input Overvoltage with Power On (V-) - 20 to (V+) + 20 VS, Analog Input Overvoltage with Power Off - 35 to + 35 Continuous Current, S or D 20 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) 40 Storage Temperature a Power Dissipation (Package) (AK Suffix) - 65 to 150 (DJ Suffix) - 65 to 125 16-Pin Plastic DIPB 600 16-Pin CerDIPC 1000 d 1000 LCC-20 V mA °C mW Notes: a. All leads soldered or welded to PC board. b. Derate 6.3 mW/°C above 75 °C. c. Derate 12 mW/°C above 75 °C. d. Derate 10 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70064 S-71155–Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VAL = 0.8 V, VAH = 2.4 Vf Tempb Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind 10 - 10 Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Full VD = ± 9.5 V, IS = - 400 µA 0.45 rDS(on) Room Full 1.2 1.5 400 Drain-Source On-Resistance rDS(on) Matching Between Channelsh Source Off Leakage Current Drain Off Leakage Current Differential Off Drain Leakage Current Unit 10 V 1.5 1.8 400 VD = ± 5 V, IS = - 400 µA Room 180 ΔrDS(on) VD = 0 V, IS = - 400 µA Room 6 IS(off) VEN = 0 V, VD = ± 10 V VS = ± 10 V Room Full 0.03 - 0.5 - 50 0.5 50 -1 - 20 1 20 Room Full Room Full 0.1 -1 - 200 -1 - 100 1 200 1 100 -1 - 50 -2 - 25 1 50 2 25 - 50 50 - 20 20 -2 - 200 -2 - 100 2 200 2 100 -5 - 50 -5 - 25 5 50 5 25 ID(off) IDIFF VEN = 0 V VD = ± 10 V VS = ± 10 V DG458 DG459 DG459 Only ID(on) 0.1 Room DG458 Drain On Leakage Current - 10 Maxd VS = VD = ± 10 V DG459 Room Full Room Full 0.1 0.05 kΩ Ω % nA Fault Output Leakage Current (with Overvoltage) Input Leakage Current (with Overvoltage) Input Leakage Current (with Power Supplies Off) ID(off) IS(off) VS = ± 33 V, VD = 0 V See Figure 1 VS = ± 25 V, VD = 10 V, See Figure 1 VS = ± 25 V, VSUPS = 0 V VD = A0, A1, A2, EN = 0 V Room 0.02 nA Room 0.005 -5 5 - 10 10 Room 0.001 -2 2 -5 5 µA Digital Control Input Low Threshold VAl Full Input Low Threshold VAL Full 2.4 Full -1 Logic Input Control Document Number: 70064 S-71155–Rev. G, 11-Jun-07 IA VA = 2.4 V or 0.8 V 0.8 0.8 2.4 1 -1 1 V µA www.vishay.com 3 DG458/459 Vishay Siliconix SPECIFICATIONSa Parameter Dynamic Characteristics Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VAL = 0.8 V, VAH = 2.4 Vf Tempb Typc tA See Figure 3 Room 200 Break-Before-Make Interval tOPEN See Figure 4 Enable Turn-On Time tON(EN) Room Room Full Room Full Room 45 140 Room 1.5 Room 90 Room 5 Transition Time See Figure 5 Enable Turn-Off Time tOFF(EN) Settling Time ts Off Isolation OIRR Logic Input Capacitance Cin Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Drain On Capacitance CD(on) To 0.1 % To 0.01 % VEN = 0 V, RL = 1 kΩ CL = 15 pF, VS = 3 VRMS f = 100 kHz f = 1 MHz A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Mind Maxd 500 10 500 250 500 250 500 0.5 Room 5 DG458 Room 15 DG459 Room 10 DG458 Room 40 DG459 Room 35 Room Full Room Full 0.05 Unit 10 250 500 250 500 50 Maxd ns µs dB pF Power Supplies Positive Supply Current I+ Negative Supply Current I- VEN = 5.0 or 0 V, VA = 0 V Power Supply Range for Continuous Operation Room - 0.01 0.1 0.2 0.1 0.2 - 0.1 - 0.2 ± 4.5 - 0.1 - 0.2 ± 18 ± 4.5 ± 18 mA V Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. When the analog signal exceeds the + 13.5 V or - 12 V, rDS(on) starts to rise until only leakage currents flow. rDS(on) MAX - rDS(on) MIN x 100 % h. ΔrDS(on) = rDS(on) AVE ( ) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70064 S-71155–Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 mA 700 r DS(on) – Drain-Source On-Resistance (Ω) V+ = V- = 0 V 100 µA I S – Source Current 10 µA 1 µA 100 nA 10 nA Operating Range 1 nA 100 pA 10 pA 1 pA - 50 - 40 - 30 - 20 - 10 V+ = 15 V V- = - 15 V 600 500 25 °C 400 85 °C 300 200 100 - 55 °C 0 0 10 20 30 40 50 - 10 - 7.5 - 5.0 VS – Source Voltage (V) - 2.5 2.5 0 7.5 5.0 10 VD – Drain Voltage (V) rDS(on) vs. VD and Temperature Input Leakage vs. Input Voltage 1 mA 10 V+ = 15 V V- = - 15 V VS, VD = ± 10 V V+ = 15 V V- = - 15 V 100 µA 10 µA 1 µA I S, I D (nA) I S – Source Current 125 °C 0 °C 100 nA 10 nA Operating Range ID(on) 1 ID(off) IS(off) 1 nA 0.10 100 pA 10 pA 1 pA - 50 - 40 - 30 - 20 - 10 0.01 0 10 20 30 40 50 - 55 - 35 - 15 5 VS – Source Voltage (V) 45 65 85 105 125 Temperature (°C) Leakage Currents vs. Temperature Off-Channel Leakage Currents vs. Input Voltage 2000 1 nA r DS(on) Drain-Source On-Resistance (Ω) V+ = 15 V V- = - 15 V 100 pA I D – Drain Current 25 10 pA 1 pA 0.1 pA - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 VS – Source Voltage (V) Output Leakage vs. Off-Channel Overvoltage Document Number: 70064 S-71155–Rev. G, 11-Jun-07 50 1600 ± 5V Supplies 1200 ± 10 V 800 ± 15 V 400 ± 20 V 0 - 20 - 15 - 10 -5 0 5 10 15 20 25 VS – Source Voltage (V) rDS(on) vs. Input Voltage www.vishay.com 5 DG458/459 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted - 110 25 V+ = 15 V V- = - 15 V 20 IS(off) 10 - 90 ID(off) 5 (dB) I S, I D – Leakage (pA) 15 V+ = 15 V V- = - 15 V RL = 1 kΩ - 100 0 - 80 Off Isolation -5 ID(on) - 10 Crosstalk - 70 - 15 - 60 - 20 - 50 - 25 - 15 - 12 - 9 -6 -3 1 3 6 9 12 15 10 k Leakage Current vs. VS, VD Off Isolation and XTALK vs. Frequency 0 tTRANS V+ = 15 V V- = - 15 V - 10 Charge Injection (pC) 200 Time (ns) 10 M f – Frequency (Hz) 240 160 tON(EN) 120 VIN = 2 V 80 - 20 - 30 CL = 1 nF - 40 - 50 tOFF(EN) CL = 10 nF - 60 40 ±5 ± 10 ± 15 - 10 ± 20 -5 0 5 10 VS – Source Voltage (V) V+, V- – Positive and Negative Supplies (V) Switching Times (tTRANS, tON, tOFF) vs. ± VSUPPLIES QINJ vs. VS 280 3.0 V+ = 15 V V- = - 15 V 240 2.5 tTRANS 200 2.0 tON(EN) 160 V TH (V) Time (ns) 1M 100 k VD or VS – Drain or Source Voltage (V) 120 tOPEN 1.5 1.0 80 0.5 tOFF(EN) 40 0 0 - 55 - 35 - 15 5 25 45 65 85 105 Temperature (°C) Switching Times vs. Temperature www.vishay.com 6 125 2.5 5 7.5 10 12.5 15 17.5 20 V+, Supply (V) Logic Input Switching Threshold vs. ± VSUPPLIES Document Number: 70064 S-71155–Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ VVREF GND D V+ A0 VV+ Level Shift AX Decode/ Drive S1 VV+ EN Sn V- TEST CIRCUITS + 15 V V+ IS(off) ± VS ID(off) Sn A D A VD V- - 15 V Figure 2. Analog Input Overvoltage + 15 V + 2.4 V V+ EN S1b * A2 A1 Logic Input ±5V DG458 A0 S8b GND VO Switch Output VO V1 MΩ 50 % 0V ± 5V Db 50 Ω 3V 35 pF +5V 90 % -5V tA - 15 V * = S1a - S 8a, S2b - S 7b, Da Figure 3. Transition Time Document Number: 70064 S-71155–Rev. G, 11-Jun-07 www.vishay.com 7 DG458/459 Vishay Siliconix TEST CIRCUITS + 15 V V+ EN + 2.4 V S1 , S8 Logic Input +5V 3V 0V S2 - S 7 A0 DG458 A1 A2 Db, D GND Switch Output VO V- 50 Ω 50 % VO 1 kΩ - 15 V 0V 35 pF tOPEN Figure 4. Break-Before-Make Time + 15 V V+ S1 Enable Input +5V EN S2 - S 8 VS DG458 A2 GND 50 % 0V A0 A1 3V V- 50 Ω Switch Output D 1 kΩ VO 35 pF VO 90 % 0V tON(EN) tOF - 15 V Figure 5. Enable Delay www.vishay.com 8 Document Number: 70064 S-71155–Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix DETAILED DESCRIPTION The Vishay Siliconix DG458 and DG459 multiplexers are fully fault- and overvoltage-protected for continuous input voltages up to ± 35 V whether or not voltage is applied to the power supply pins (V+, V-). These multiplexers are built on a high-voltage junction-isolated silicon-gate CMOS process. Two n-channel and one p-channel MOSFETs are connected in series to form each channel (Figure 1). Within the normal analog signal range (± 10 V), the rDS(on) variation as a function of analog signal voltage is comparable to that of the classic parallel N-MOS and P-MOS switches. - 35 V Overvoltage n-Channel MOSFET is On Q1 - 35 V S D G Q2 S D G Q3 S + 35 V Overvoltage D n-Channel MOSFET is Off G p-Channel MOSFET is Off (a) Overvoltage with Multiplexer Power Off When the analog signal approaches or exceeds either supply rail, even for an on-channel, one of the three series MOSFETs gets cut-off, providing inherent protection against overvoltages even if the multiplexer power supply voltages are lost. This protection is good up to the breakdown voltage of the respective series MOSFETs. Under fault conditions only sub microamp leakage currents can flow in or out of the multiplexer. This not only provides protection for the multiplexer and succeeding circuitry, but it allows normal, undisturbed operation of all other channels. Additionally, in case of power loss to the multiplexer, the loading caused on the transducers and signal sources is insignificant, therefore redundant multiplexers can be used on critical applications such as telemetry and avionics. - 15 V Q2 Q1 - 35 V Overvoltage n-Channel MOSFET is On + 15 V - 15 V + 15 V - 15 V Q3 + 35 V Overvoltage n-Channel MOSFET is Off p-Channel MOSFET is Off (b) Overvoltage with Multiplexer Power On Figure 5. Overvoltage Protection Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70064. Document Number: 70064 S-71155–Rev. G, 11-Jun-07 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1