ES3F & ES3G Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 300 V, 400 V IFSM 100 A trr 35 ns VF 1.1 V TJ max. 150 °C TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ES3F ES3G EF EG UNIT Maximum repetitive peak reverse voltage VRRM 300 400 V Working peak reverse voltage VRWM 225 300 V Maximum RMS voltage VRMS 210 280 V Maximum average forward rectified current at TL = 110 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 88590 Revision: 20-Nov-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 ES3F & ES3G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) SYMBOL 3.0 A Maximum DC reverse current at working peak reverse voltage TA = 25 °C TA = 100 °C ES3F ES3G UNIT VF 1.1 V IR 10 350 µA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM trr 50 ns Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM IRM 3.0 A Maximum stored charge IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM Qrr 50 nC Typical junction capacitance 4.0 V, 1 MHz CJ 30 pF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES3F RθJA RθJL Typical thermal resistance (1) ES3G UNIT 50 15 °C/W Note: (1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES3G-E3/57T 0.211 57T 850 7" diameter plastic tape and reel ES3G-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel ES3GHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel ES3GHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 8.3 ms Single Half Sine-Wave at TL = 110 °C 125 100 75 50 25 0 0 80 90 100 110 120 130 140 150 1 100 10 Lead Temperature (°C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88590 Revision: 20-Nov-07 ES3F & ES3G Vishay General Semiconductor 100 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 10 1 0.1 1.5 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Junction Capacitance 3.0 10 000 D = 0.5 TJ = 150 °C TJ = 125 °C TJ = 100 °C 100 10 TJ = 25 °C 1 D = 0.8 D = 0.3 2.5 1000 Average Power Loss (W) Instantaneous Reverse Leakage Current (µA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.2 2.0 D = 1.0 D = 0.1 1.5 T 1.0 0.5 D = tp/T tp 0 0.1 0 20 40 60 80 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Figure 4. Typical Reverse Leakage Characteristics Figure 7. Forward Power Loss Characteristics Recovered Stored Charge/ Reverse Recovery Time nC/ns 200 at 5 A, 50 A/µs 160 120 at 2 A, 20 A/µs 80 at 2 A, 20 A/µs at 5 A, 50 A/µs at 1 A, 100 A/µs at 1 A, 100 A/µs 40 trr Qrr 0 25 50 75 100 125 150 175 Junction Temperature (°C) Figure 5. Reverse Switching Characteristics Document Number: 88590 Revision: 20-Nov-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 ES3F & ES3G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Mounting Pad Layout Cathode Band 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.008 (0.2) 0 (0) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88590 Revision: 20-Nov-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1