GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCES 400 V DC VGES ±4 Pulse VGES ±5 Pulse (Note 1) ICP 130 A (Note 2a) PC (1) 0.83 W (Note 2b) PC (2) 0.69 W Tj 150 °C Tstg −55 to 150 °C Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation(t = 10 s) Junction temperature Storage temperature range V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1,2,3 Emitter 4 5,6,7,8 Gate Collector JEDEC ― JEITA ― TOSHIBA 2-3Y1A Weight: 0.02 g (Typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Thermal Characteristics Characteristics Symbol Rating Unit Thermal resistance , junction to ambient (t = 10 s) (Note2a) Rth (j-a) (1) 150 °C/W Thermal resistance , junction to ambient (t = 10 s) (Note2b) Rth (j-a) (2) 180 °C/W Marking (Note 3、Note 4) 8 7 6 5 Part No. (or abbreviation code) Product-specific code 5G133 Lot No Pin #1 1 2 3 4 Note : For (Note 1) , (Note 2a) , (Note 2b) , (Note 3) and (Note 4) . 1 2010-01-15 GT5G133 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGES VGE = ± 4 V, VCE = 0 ⎯ ⎯ ± 10 μA Collector cut-off current ICES VCE = 400 V, VGE = 0 ⎯ ⎯ 10 μA VGE (OFF) IC = 1 mA, VCE = 5 V 0.55 ― 1.05 V Collector-emitter saturation voltage Input capacitance VCE (sat) Cies Rise time tr Turn-on time ton IC = 130 A, VGE = 2.5 V ⎯ 3.0 ⎯ V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2480 ⎯ pF ⎯ 2.0 ⎯ ⎯ 2.1 ⎯ ⎯ 1.5 ⎯ ⎯ 2.1 ⎯ 3V 0 62 Ω Switching time Fall time tf Turn-off time toff VIN: tr ≤ 100 ns tf ≤ 100 ns Duty cycle ≤ 1% 2.3Ω Gate-emitter cut-off voltage μs ≈ 300V Note Note 1: Please use devices on condition that the junction temperature is below 150°C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on Note 2b : Device mounted on a glass-epoxy board (a) a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) for Gate for Collector for Emitter for Collector for Emitter for Gate Note 3: ● on lower right of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Note 4: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-01-15 GT5G133 Caution on handling This device is MOS gate type. Therefore , please care of a protection from ESD in your handling . Caution in design ●You should be design dV/dt value is under 400V/μs below figure.1. The slope of VCE from 30v to 90v (attached figure.1) dv/dt = (90V-30V) / (⊿t) = 60V / ⊿t a) waveform IC(begin) b)waveform(expansion) IC IC(end) VCE VCE 90V 30V dv/dt period ⊿t Figure.1 dv / dt ●Outside pin Outside pin is same collector voltage. These outside pin are same collector voltage. ８ １ ７ ２ ６ ３ ５ PIN ASSIGNMENT １，２，３ ：Emitter ４ ：Gate ５，６，７，８ ：Collector ４ 3 2010-01-15 GT5G133 IC – VCE IC – VCE 200 200 3 4 (A) 160 3 2.7 VGE = 2 V 120 Corrector current Corrector current 160 2.7 2.5 IC 2.5 IC (A) 4 80 40 Common emitter 120 VGE = 2 V 80 40 Common emitter Ta = −40°C 0 0 1 2 3 Ta = 25°C 4 Corrector‐emitter voltage 0 0 5 VCE (V) 1 2 IC – VCE Collector-emitter saturation voltage VCE(sat) (V) (A) 160 2.7 IC Corrector current (V) VCE(sat) – Ta 3 2.5 120 VGE = 2 V 80 40 Common emitter Ta = 70°C 0 0 1 2 3 4 Corrector‐emitter voltage VCE 5 IC = 130 A 4 3 100 70 2 30 1 Common emitter VGE = 2.5 V 0 −50 (V) 0 50 Ambient temperature 100 Ta 150 (°C) VGE(OFF) – Ta IC – VGE 1.6 25 Gate-emitter cut-off voltage VGE(OFF) (V) 160 70 120 Ta = −40°C IC (A) VCE 5 5 4 80 40 Common emitter 1.2 0.8 0.4 Common emitter VCE = 5 V VCE = 5 V 0 4 Corrector‐emitter voltage 200 Corrector 3 0 1 2 Gate‐emitter voltage 3 0 −50 4 VGE (V) IC = 1 mA 0 50 Ambient temperature 4 100 Ta 150 (°C) 2010-01-15 VCE, VGE – QG VGE 200 4 2 100 （pF） 0 0 0 20 10 30 Gate charge QG 40 ton 1000 100 Coes 10 Cres 1 1000 100 VCE (V) Switching Time – IC 10 (μs) (μs) tr Switching Time tf 1 Common emitter VCC = 300 V VGE = 3 V IC = 130 A Ta = 25°C toff tf 1 ton Common emitter VCC = 300 V VGE = 3 V RG = 62 Ω Ta = 25°C tr 0.1 100 Gate resistance 0 1000 RG (Ω) 40 80 120 Collector current 160 IC 200 (A) Minimum Gate Drive Area Maximum Operating Area 160 ICP (A) 800 600 Peak collector current CM (μF) 10 Corrector‐emitter voltage (nC) toff 0.1 10 Main capacitance Common emitter VGE = 0 V f = 1 MHz Ta = 25°C 1 50 Switching Time – RG 10 Switching Time 6 Cies C VCE 10000 Capacitance 300 C – VCE 8 Common emitter VCC = 300 V RL = 2 Ω Ta = 25°C VGE (V) 400 Gate‐emitter voltage Collector‐emitter voltage VCE（Ｖ） GT5G133 400 200 VCM = 350 V Ta < = 70°C VGE = 2.5 V 56 Ω < = RG < = 91 Ω 0 0 40 120 Ta = 25°C 70 80 40 0 80 120 Peak corrector current 160 ICP 0 200 (A) 2 Gate‐emitter voltage 5 4 6 VGE (V) 2010-01-15 GT5G133 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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