GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11μs (typ.) (IC = 60A) FRD : trr = 0.8μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) =1.70V (typ.) (IC = 60A) • High Junction temperature : Tj = 175℃ (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 900 V Gate-emitter voltage VGES ± 25 V DC IC 60 1ms ICP 120 DC IF 15 1ms IFP 120 Collector power dissipation (Tc = 25°C) PC 254 W Junction temperature Tj 175 °C Storage temperature Tstg −40 to 175 °C Collector current Diode forward current A A JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Marking Equivalent Circuit Collector TOSHIBA 60M324 Gate Part No. (or abbreviation code) Lot No. Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Emitter Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 1 2009-10-19 GT60M324 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ⎯ ⎯ ± 500 nA Collector cut-off current ICES VCE = 900 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 60 mA, VCE = 5 V 4.5 ⎯ 7.5 V IC = 10 A, VGE = 15 V ⎯ 1.10 1.60 IC = 30 A, VGE = 15 V ⎯ 1.40 1.85 IC = 60 A, VGE = 15 V ⎯ 1.70 2.00 VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 3600 ⎯ Resistive Load ⎯ 0.19 ⎯ VCC = 600 V, IC = 60 A ⎯ 0.31 ⎯ VGG = ±15 V, RG = 51 Ω ⎯ 0.11 0.22 ⎯ 0.60 ⎯ Gate-emitter cut-off voltage Collector-emitter saturation voltage VCE (sat) Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 2) toff V pF μs Diode forward voltage VF IF = 15 A, VGE = 0 ⎯ 1.3 1.9 V Reverse recovery time trr IF = 15 A, VGE = 0, di/dt = − 20 A/μs ⎯ 0.8 ⎯ µs Thermal Resistance (IGBT) Rth(j-c) ⎯ ⎯ ⎯ 0.59 °C/W Thermal Resistance (Diode) Rth(j-c) ⎯ ⎯ ⎯ 4.0 °C/W Note 2: Switching time measurement circuit and input/output waveforms VGE 90% 10% RG 10Ω 0 IC 0 90% VCC 0 90% 10% VCE 2 10% tf tr toff ton 2009-10-19 GT60M324 IC – VCE 120 Common emitter Tc = −40°C 9 10 (A) 20 (A) 10 100 Collector current IC 80 8.5 60 40 15 Common emitter Tc = 25°C 15 100 Collector current IC IC – VCE 120 8 20 9 20 8.5 80 60 8 40 VGE =7.5 V 20 VGE = 7.5 V 0 0 1 2 3 Collector-emitter voltage 4 0 0 5 1 VCE (V) 2 IC – VCE Common emitter Tc = 150°C 100 100 150 (A) 8.5 (A) Collector current IC 9 15 8 80 60 VGE = 7.5 V 40 20 80 25 Tc=-40℃ 60 40 20 0 0 1 2 3 Collector-emitter voltage 4 0 5 0 1 2 VCE (sat) – Tc Common emitter VGE = 15 V (A) Collector current IC 100 80 60 2 40 IC =20 A 1 80 60 40 20 25 75 125 Common emitter VCE = 5 V 100 120 3 −25 4 VCE (V) IC – VGE 120 0 −75 3 Collector -emitter voltage VCE (V) 4 Collector-emitter saturation voltage VCE (sat) (V) 5 Common emitter VGE = 15 V 10 20 4 VCE (V) IC – VCE 120 Collector current IC 120 3 Collector-emitter voltage 0 2 175 25 −40 Tc = 150°C 4 6 Gate-emitter voltage Case temperature Tc (°C) 3 8 10 12 VGE (V) 2009-10-19 GT60M324 VCE, VGE – QG C – VCE Common emitter RL = 5 Ω Tc = 25°C VCE = 150 V 50 8 100 50 4 0 0 80 160 (pF) 1000 500 300 Coes 100 50 30 Common emitter VGE = 0 f = 1MHz Tc = 25°C 10 0.1 0 320 240 Cies 3000 Capacitance C 12 VGE (V) 5000 150 100 10000 16 Gate-emitter voltage Collector-emitter voltage VCE (V) 200 1 Gate charge QG (nC) Switching Time – RG 3 toff Switching time (μs) Switching time (μs) 5 ton tr 0.3 tf 0.1 toff 0.3 ton tr 0.03 100 RG 0.01 0 1000 IC max (pulsed) * Transient thermal impedance(Junction−case) rth(j−c) (°C/W) (A) 300 10 μs* 100 μs* 50 IC max 30 (continuous) 1 ms* 10 ms* 10 DC operation 3 10 Collector-emitter voltage 100 20 30 40 50 Collector current IC *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 500 10 (Ω) Safe Operating Area 1000 tf 0.1 0.05 10 Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 1 0.03 Gate resistance Collector current IC VCE (V) 0.5 0.05 1 1 1000 Switching Time – IC 0.5 5 100 10 Common emitter 5 VCC = 600 V 3 IC = 60 A VGG = ±15 V Tc = 25°C 1 100 10 Collector-emitter voltage 10 0.01 1 Cres 1000 VCE (V) 10 70 (A) rth (j−c ) – tw 2 Tc = 25°C 10 10 1 Diode stage 0 IGBT stage 10 −1 10−2 10−3 10−5 10−4 10−3 10−2 Pulse width 4 60 10−1 tw 10 0 10 1 10 2 (s) 2009-10-19 GT60M324 Irr, trr – IF 10 Peak reverse recovery current (A) Forward current IF 80 60 25 40 Tc = 150°C 20 0 −40 0 0.5 1.0 1.5 2.0 Forward voltage VF 2.5 9 (V) 2 1.5 8 Irr trr 7 1 6 5 0 3.0 2.5 trr VGE = 0 100 Common emitter di/dt = −20 A/μs Tc = 25°C 0.5 20 40 Forward current IF 60 Reverse recovery time Irr (A) Common emitter (μs) IF – V F 120 0 80 (A) Irr, trr – di/dt 40 1.25 1 trr trr 30 0.75 20 0.5 Irr 10 0 0.25 0 50 100 150 200 Reverse recovery time Peak reverse recovery current Irr (A) Common emitter IF = 60 A Tc = 25°C (μs) 50 0 250 di/dt (A/μs) 5 2009-10-19 GT60M324 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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