2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3669. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −5 V Collector current IC −2 A Base current IB −1 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 Tstg −55 to 150 Storage temperature range JEDEC ― °C JEITA ― °C TOSHIBA 2-7D101A Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.2 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-03-09 2SA1429 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −80 V, IE = 0 ― ― −1.0 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 μA V (BR) CEO IC = −10 mA, IB = 0 −80 ― ― V VCE = −2 V, IC = −0.5 A 70 ― 240 hFE (2) VCE = −2 V, IC = −1.5 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = −1 A, IB = −0.05 A ― −0.2 −0.5 V Base-emitter saturation voltage VBE (sat) IC = −1 A, IB = −0.05 A ― −0.9 −1.2 V fT VCE = −2 V, IC = −0.5 A ― 80 ― MHz VCB = −10 V, IE = 0, f = 1 MHz ― 45 ― pF ― 0.2 ― ― 1.0 ― ― 0.2 ― hFE (1) DC current gain (Note 2) Transition frequency Collector output capacitance Cob Turn-on time ton Storage time tstg IB1 Switching time Input IB2 20 μs IB1 IB2 Output 30 Ω Collector-emitter breakdown voltage μs VCC = −30 V Fall time tf IB1 = 0.05 A,IB2 = 0.05 A duty cycle ≤ 1% Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking A1429 Part No. (or abbreviation code) Lot No. Characteristics indicator Note 3 Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-03-09 2SA1429 IC – VCE −30 −15 Common emitter −1.6 −10 Collector-emitter voltage (A) −20 Collector current IC VCE – IC −1.0 VCE (V) −2.0 −1.2 IB = −5 mA −0.8 −0.4 Common emitter −2 −4 −6 IB = −5 mA −10 −20 −30 −50 −70 −0.6 −100 −0.4 −0.2 Ta = 25°C 0 0 0 Ta = 25°C −0.8 −8 Collector-emitter voltage −10 0 0 −12 −0.4 VCE (V) −0.8 −1.2 −1.6 Collector current IC VCE – IC VCE (V) Common emitter Ta = 100°C −0.8 IB = −5 mA −10 −20 −30 −50 −70 Collector-emitter voltage VCE (V) (A) −1.0 Common emitter Collector-emitter voltage −2.4 VCE – IC −1.0 −0.6 −100 −0.4 −0.2 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 Collector current IC −0.8 −50 −70 −100 −0.2 −0.4 −0.8 −1.2 −1.6 Collector current IC −2.0 −2.4 (A) VCE (sat) – IC VCE = −2 V Ta = 100°C 25 100 −55 50 30 −0.3 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) 300 −0.1 −20 −30 −40 −0.4 (A) Common emitter −0.03 Ta = −55°C −15 −0.6 0 0 −2.4 500 10 −0.01 IB = −5 mA −10 hFE – IC DC current gain hFE −2.0 −0.5 Common emitter IC/IB = 20 −0.3 Ta = 100°C −0.1 25 −0.05 −0.01 −0.01 −1 (A) −55 −0.03 −0.03 −0.1 −0.3 Collector current IC 3 −1 (A) 2010-03-09 2SA1429 VBE (sat) – IC IC – VBE −2.0 Common emitter Common emitter VCE = −2 V IC/IB = 20 −0.5 (A) Ta = −55°C −1 Collector current IC Base-emitter saturation voltage VBE (sat) (V) −3 25 100 −0.3 −0.1 −0.01 −0.03 −0.1 −0.3 Collector current IC −1 −1.6 −1.2 Ta = 100°C −0.8 25 −55 −0.4 (A) 0 0 −0.2 −0.4 −0.6 −0.8 Base-emitter voltage PC – Ta −3 1.0 0.8 0.6 0.4 0.2 40 60 80 100 120 140 (A) 1.2 −1 Collector current IC (W) Collector power dissipation PC −5 20 −1.2 −1.4 VBE (V) Safe Operating Area 1.4 0 0 −1.0 −0.5 IC max (pulsed)* −0.3 1 s* 100 ms* DC operation Ta = 25°C −0.1 *: Single nonrepetitive pulse Ta = 25°C −0.03 Curves must be derated linearly with increase in temperature. −0.05 −0.01 −0.1 160 1 ms* 10 ms* IC max (continuous) −0.3 −1 −3 VCEO max −10 −30 −100 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 4 2010-03-09 2SA1429 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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