1N5711 and 1N6263 Schottky Diodes DO-204AH (DO-35 Glass) Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. Mechanical Data Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit VRRM 70 60 V Power Dissipation (Infinite Heatsink) Ptot 400(1) mW Maximum Single Cycle Surge 10 µs Square Wave IFSM 2.0 A 1N5711 1N6263 Peak Inverse Voltage (1) RΘJA Thermal Resistance Junction to Ambient Air Junction Temperature Tj Storage Temperature Range TS 0.3 °C/mW °C (1) 125 °C (1) –55 to +150 Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V(BR)R IR = 10µA 70 60 — — — — V Leakage Current IR VR = 50V — — 200 nA Forward Voltage Drop VF IF = 1mA IF = 15mA — — — — 0.41 1.0 V Junction Capacitance Ctot VR = 0V, f = 1MHz — — 2.2 pF trr IF = IR = 5mA, recover to 0.1IR — — 1 ns J Reverse Breakdown Voltage Reverse Recovery Time 1N5711 1N6263 Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 10/6/00 1N5711 and 1N6263 Schottky Diodes Ratings and Characteristic Curves (T A = 25°C unless otherwise noted)