ETC MBT3906DW

MBT3906DW
Dual General Purpose Transistor
PNP+PNP Silicon
1
2
3
6 5
1
* “G” Lead(Pb)-Free
4
3
SOT-363(SC-88)
6
5
2
4
PNP+PNP
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C
(1)
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
Max
Unit
PD
150
mW
R θ JA
833
C/W
TJ,Tstg
-55 to +150
C
Device Marking
MBT3906DW=A2
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0)
V(BR)CEO
-40
-
Vdc
Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0)
V(BR)CBO
-40
-
Vdc
Emitter-Base Breakdown Voltage (IE=-10 uAdc, IC=0)
V(BR)EBO
-5.0
-
Vdc
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)
IBL
-
-50
nAdc
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)
ICEX
-
-50
nAdc
1.Decice Mounted on FR4 glass epoxy printed circuit board using the minimun recommended foot print.
2.Pulse Test:Pluse Width <
=300 µS, Duty Cycle <
=2.0%.
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MBT3906DW
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
60
-
80
-
100
300
60
-
30
-
Unit
On Characteristics (2)
DC Current Gain
(IC= -0.1 mAdc, VCE= -1.0Vdc)
(IC= -1.0 mAdc, VCE= -1.0 Vdc)
(IC= -10 mAdc, VCE= -1.0Vdc)
(IC= -50 mAdc, VCE= -1.0Vdc)
HFE
(IC= -100 mAdc, VCE= -1.0Vdc)
-
Collector-Emitter Saturation Voltage (2)
(IC= -10 mAdc, IB= -1.0mAdc)
(IC= -50 mAdc, IB= -5.0mAdc)
VCE(sat)
-
-0.25
-0.4
Vdc
Base-Emitter Saturation Voltage (2)
(IC= -10 mAdc, IB= -1.0 mAdc)
(IC= -50 mAdc, IB= -5.0 mAdc)
VBE(sat)
-0.65
-
-0.85
-0.95
Vdc
Small-signal Characteristics
Current-Gain-Bandwidth Product (1)
(IC= -10 mAdc, VCE= -20 Vdc, f=100MHz)
fT
250
-
MHz
Cobo
-
4.5
pF
Cibo
-
10
pF
hie
2.0
12
k ohms
Voltage Feeback Radio
(VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz)
hre
0.1
10
x 10-4
Small-Signal Current Gain
(VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz)
hfe
100
400
-
Output Admittance
(VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz)
hoe
3.0
60
µmhos
Noise Figure
(VCE= -5.0Vdc IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz)
NF
-
4.0
dB
Output Capacitance
(VCB= -5.0 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= -0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz)
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= -3.0 Vdc, VBE= 0.5 Vdc
Ic= -10 mAdc, IB1= -1.0 mAdc)
td
-
35
tr
-
35
(Vcc= -3.0 Vdc,
Ic= -10 mAdc, IB1=IB2= -1.0 mAdc)
ts
-
225
tf
-
75
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ns
ns
MBT3906DW
3V
+9.1V
3V
<1ns
275
<1ns
275
10k
+0.5V
10k
0
CS<4 pF
10.6V
300 ns
10<t1<500µs
DUTY CYCLE=2%
CS<4 pF
1N916
DUTY CYCLE=2%
10.9V
t1
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure . Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ=125 C
10
5000
7.0
3000
VCC=40V
IC/IB=10
2000
5.0
Cobo
Q CHARGE (pC)
CAPACITANCE (pF)
TJ=25 C
Cibo
3.0
2.0
1000
700
500
300
200
QT
Q
100
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20 30
70
50
40
1.0
2.0 3.0
20
30
50 70
100
200
Figure 4. Charge Data
Figure 3. Capacitance
500
500
300
IC/IB=10
300
200
tf FALL TIME (ns)
200
100
TIME (ns)
7.0 10
IC COLLECTOR CURRENT (mA)
REVERSEM BIAS (VOLTS)
70
tr@VCC=3.0V
50
15V
30
20
40V
2.0V
10
7
5
5.0
A
td@VOB=0V
1.0
2.0
3.0 5.0 7.0 10
20 30
50 70 100
IC COLLECTOP CURRENT (mA)
Figure 5. Turn-On Time
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200
IC/IB=20
VCC=40V
IB1=IB2
100
70
50
30
20
IC/IB=10
10
7
5
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
IC COLLECTYOR CURRENT (mA)
Figure 6.Fall Time
200
MBT3906DW
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz)
12
SOURCE RESISTANCE=200½
IC=1.0 mA
4.0
SOURCE RESISTANCE=200½
IC=0.5 mA
3.0
SOURCE RESISTANCE=2.0 k
IC=50 µA
2.0
10
SOURCE RESISTANCE=2.0 k
IC=100 µA
1.0
0
0.1
0.2
0.4
1.0
2.0
8
IC=100µA
6
4
IC=50µA
2
4.0
10
20
40
0
100
0.1
0.2
f FREQUENCY (kHZ)
4.0
10
20
40
100
100
hoe OUTPUT ADMITTANCE (µ mhos)
200
100
70
50
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
70
50
30
20
10
7
5
1.0
0.1
0.2
IC COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
1.0
IC COLLECTOR CURRENT(mA)
Figure 10. Input Impedance
Figure 9. Current Gain
10
hfe VOLTAGE FEEBACK RATIO (X 10x4)
20
hfe INPUT IMPEDANCE (k OHMS)
2.0
(VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C)
300
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
Figure 8.
h PARAMETERS
hfe DC CURRENT GAIN
0.4
Rg SOURCE RESISTANCE (k OHMS)
Figure 7.
30
IC=0.5mA
IC=1.0mA
f=1.0 kHz
NF NOISE FIGURE (dB)
NF NOISE FIGURE (dB)
5.0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
IC COLLECTOR CURRENT (MA)
Figure .11 Input Impedance
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5.0
7.0 10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
IC COLLECTOR CURRENT (mA)
Figure 12. Votage Feeback Ratio
5.0 7.0
10
MBT3906DW
hFE DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ=+125 C
VCE=10V
+25 C
1.0
0.7
-55 C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC COLLECTOR CURRENT (mA)
VCE COLLECTOR EMITTER VOLTAGE (VOLTS)
Figurer 13. DC Current Gain
1.0
TJ=25 C
0.8
IC=1.0mA
30mA
10mA
100mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB BASE CURRENT (mA)
1.0
VBE(sat) @ IC/IB=10
V VOLTAGE (VOLTS)
TJ=25 C
0.8
VBE(sat) @VCE=1.0V
0.6
0.4
VCE(sat) @ IC/IB=10
0.2
0
10
20
50
10
20
50
IC COLLECTOR CURRENT (mA)
Figure 15. "ON" Voltages
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100
200
qv TEMPERATURE COEFFICIENTS (mVAC)
Figure 14. Collector Saturation Region
1.0
0.5
+25 C TO +125 C
qVC FOR VCE(sat)
0
-55 C TO +25 C
-0.5
+25 C TO +125 C
-1.0
-55 C TO +25 C
-1.5
-2.0
qVB FOR VBE(sat)
0
20
40
60
80
100
120
140
160
IC COLLECTOR CURRENT (mA)
Figure 16.Temperature Coefficients
180
200
MBT3906DW
SOT-363 Package Outline Dimensions
Unit:mm
A
6
5
SOT-363
4
B C
1
2
D
3
E
H
K
J
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L
M
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25