CY7C1019D 1-Mbit (128K x 8) Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The eight input and output pins (IO0 through IO7) are placed in a high-impedance state when: • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3 mA • Deselected (CE HIGH) • Outputs are disabled (OE HIGH) • When the write operation is active (CE LOW, and WE LOW). • 2.0V Data retention • Automatic power-down when deselected • CMOS for optimum speed/power • Center power/ground pinout • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019B • Available in Pb-free 32-pin 400-Mil wide Molded SOJ and 32-pin TSOP II packages Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A16). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appears on the IO pins. Logic Block Diagram IO0 INPUT BUFFER IO1 128K x 8 ARRAY IO2 SENSE AMPS ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 IO3 IO4 IO5 IO6 CE COLUMN DECODER WE A9 A10 A11 A12 A13 A14 A15 A16 OE IO7 POWER DOWN Note 1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05464 Rev. *F • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised December 14, 2010 [+] Feedback CY7C1019D Pin Configuration SOJ/TSOPII Top View A0 A1 A2 A3 CE IO 0 IO 1 VCC V SS IO 2 IO 3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE IO 7 IO 6 VSS VCC IO 5 IO 4 A12 A11 A10 A9 A8 Selection Guide –10 (Industrial) Unit Maximum Access Time 10 ns Maximum Operating Current 80 mA Maximum Standby Current 3 mA Document #: 38-05464 Rev. *F Page 2 of 13 [+] Feedback CY7C1019D Maximum Ratings Current into Outputs (LOW) ........................................ 20 mA Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65C to +150C Ambient Temperature with Power Applied............................................. –55C to +125C Supply Voltage on VCC to Relative GND [2] ... –0.5V to +6.0V Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current .................................................... > 200 mA Operating Range DC Voltage Applied to Outputs in High-Z State [2] ...................................–0.5V to VCC + 0.5V Range Ambient Temperature VCC Speed Industrial –40C to +85C 5V 0.5V 10 ns DC Input Voltage [2]................................–0.5V to VCC + 0.5V Electrical Characteristics (Over the Operating Range) Parameter Description –10 (Industrial) Test Conditions VOH Output HIGH Voltage IOH = –4.0 mA VOL Output LOW Voltage IOL = 8.0 mA VIH Input HIGH Voltage Min Max 2.4 [2] Unit V 0.4 V 2.2 VCC + 0.5 V –0.5 0.8 V VIL Input LOW Voltage IIX Input Leakage Current GND < VI < VCC –1 +1 A IOZ Output Leakage Current GND < VI < VCC, Output Disabled –1 +1 A ICC VCC Operating Supply Current VCC = Max, IOUT = 0 mA, f = fmax = 1/tRC 100 MHz 80 mA 83 MHz 72 mA 66 MHz 58 mA 40 MHz 37 mA ISB1 Automatic CE Power-Down Current—TTL Inputs Max VCC, CE > VIH VIN > VIH or VIN < VIL, f = fmax 10 mA ISB2 Automatic CE Power-Down Current—CMOS Inputs Max VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 3 mA Note 2. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns. Document #: 38-05464 Rev. *F Page 3 of 13 [+] Feedback CY7C1019D Capacitance [3] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions Max Unit 6 pF 8 pF TA = 25C, f = 1 MHz, VCC = 5.0V Thermal Resistance [3] Parameter Description JA Thermal Resistance (Junction to Ambient) JC Thermal Resistance (Junction to Case) Test Conditions Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit board 400-Mil Wide SOJ TSOP II Unit 56.29 62.22 C/W 38.14 21.43 C/W AC Test Loads and Waveforms [4] ALL INPUT PULSES 3.0V Z = 50 90% OUTPUT 50 * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT 30 pF* 90% 10% 10% GND 1.5V Rise Time: 3 ns (a) (b) Fall Time: 3 ns High-Z characteristics: R1 480 5V OUTPUT INCLUDING JIG AND SCOPE R2 255 5 pF (c) Notes 3. Tested initially and after any design or process changes that may affect these parameters. 4. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load shown in Figure (c). Document #: 38-05464 Rev. *F Page 4 of 13 [+] Feedback CY7C1019D Switching Characteristics (Over the Operating Range) [5] Parameter Description –10 (Industrial) Min Max Unit Read Cycle tpower [6] VCC(typical) to the first access 100 s tRC Read Cycle Time 10 ns tAA Address to Data Valid tOHA Data Hold from Address Change tACE 10 ns CE LOW to Data Valid 10 ns tDOE OE LOW to Data Valid 5 ns tLZOE OE LOW to Low Z tHZOE tLZCE tHZCE ns 0 OE HIGH to High Z CE LOW to Low Z 3 [7, 8] [8] CE HIGH to High Z 5 3 [7, 8] tPU [9] CE LOW to Power-Up tPD [9] CE HIGH to Power-Down ns ns ns 5 0 ns ns 10 ns Write Cycle [10, 11] tWC Write Cycle Time 10 ns tSCE CE LOW to Write End 7 ns tAW Address Set-Up to Write End 7 ns tHA Address Hold from Write End 0 ns tSA Address Set-Up to Write Start 0 ns tPWE WE Pulse Width 7 ns tSD Data Set-Up to Write End 6 ns tHD Data Hold from Write End 0 ns 3 ns tLZWE tHZWE WE HIGH to Low Z [8] WE LOW to High Z [7, 8] 5 ns Notes 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed. 7. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (c) of “AC Test Loads and Waveforms [4]” on page 4. Transition is measured when the outputs enter a high impedance state. 8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 9. This parameter is guaranteed by design and is not tested. 10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 11. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05464 Rev. *F Page 5 of 13 [+] Feedback CY7C1019D Data Retention Characteristics (Over the Operating Range) Parameter Description Conditions VDR VCC for Data Retention ICCDR Data Retention Current tCDR [3] Chip Deselect to Data Retention Time tR [12] Min Max 2.0 VCC = VDR = 2.0V, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V V 3 Operation Recovery Time Unit mA 0 ns tRC ns Data Retention Waveform DATA RETENTION MODE 4.5V VCC VDR > 2V 4.5V tR tCDR CE Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) [13, 14] tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled) [14, 15] ADDRESS tRC CE tACE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE tHZCE DATA VALID tLZCE VCC SUPPLY CURRENT HIGH IMPEDANCE tPD tPU 50% ICC 50% ISB Notes 12. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 s or stable at VCC(min) > 50 s. 13. Device is continuously selected. OE, CE = VIL. 14. WE is HIGH for Read cycle. 15. Address valid prior to or coincident with CE transition LOW. Document #: 38-05464 Rev. *F Page 6 of 13 [+] Feedback CY7C1019D Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled) [16, 17] tWC ADDRESS tSCE CE tSA tSCE tAW tHA tPWE WE tSD DATA IO tHD DATA VALID Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [16, 17] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE OE tSD DATA IO tHD DATAIN VALID NOTE 18 tHZOE Notes 16. Data IO is high impedance if OE = VIH. 17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 18. During this period the IOs are in the output state and input signals should not be applied. Document #: 38-05464 Rev. *F Page 7 of 13 [+] Feedback CY7C1019D Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) [11, 17] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE tSD DATA IO NOTE 18 tHD DATA VALID tLZWE tHZWE Truth Table CE OE WE IO0–IO7 H X X High Z Power-Down Standby (ISB) L L H Data Out Read Active (ICC) L X L Data In Write Active (ICC) L H H High Z Selected, Outputs Disabled Active (ICC) Document #: 38-05464 Rev. *F Mode Power Page 8 of 13 [+] Feedback CY7C1019D Ordering Information Speed (ns) 10 Ordering Code Package Diagram Package Type CY7C1019D-10VXI 51-85033 32-pin (400-Mil) Molded SOJ (Pb-free) CY7C1019D-10ZSXI 51-85095 32-pin TSOP Type II (Pb-free) Operating Range Industrial Ordering Code Definitions CY 7 C 1 01 9 D - 10 XXX I Temperature Range: I = Industrial Package Type: XXX = VX or ZSX VX = 32-pin Molded SOJ (Pb-free) ZSX = 32-pin TSOP Type II (Pb-free) Speed: 10 ns D = C9, 90 nm Technology 9 = Data width × 8-bits 01 = 1-Mbit density 1 = Fast Asynchronous SRAM family Technology Code: C = CMOS 7 = SRAM CY = Cypress Please contact your local Cypress sales representative for availability of these parts. Document #: 38-05464 Rev. *F Page 9 of 13 [+] Feedback CY7C1019D Package Diagrams Figure 1. 32-pin (400-Mil) Molded SOJ (51-85033) 51-85033 *C Document #: 38-05464 Rev. *F Page 10 of 13 [+] Feedback CY7C1019D Package Diagrams (continued) Figure 2. 32-pin Thin Small Outline Package Type II (51-85095) 51-85095 *A All product or company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05464 Rev. *F Page 11 of 13 [+] Feedback CY7C1019D Document History Page Document Title: CY7C1019D, 1-Mbit (128K x 8) Static RAM Document Number: 38-05464 REV. ECN NO. Issue Date Orig. of Change ** 201560 See ECN SWI Advance Information data sheet for C9 IPP *A 233715 See ECN RKF DC parameters are modified as per EROS (Spec # 01-2165) Pb-free offering in the Ordering Information *B 262950 See ECN RKF Added Tpower Spec in Switching Characteristics table Added Data Retention Characteristics table and waveforms Shaded Ordering Information *C 307598 See ECN RKF Reduced Speed bins to -10 and -12 ns *D 520647 See ECN VKN Converted from Preliminary to Final Removed Commercial Operating range Removed 12 ns speed bin Added ICC values for the frequencies 83MHz, 66MHz and 40MHz Updated Thermal Resistance table Updated Ordering Information Table Changed Overshoot spec from VCC+2V to VCC+1V in footnote #2 *E 802877 See ECN VKN Changed ICC spec from 60 mA to 80 mA for 100MHz, 55 mA to 72 mA for 83MHz, 45 mA to 58 mA for 66MHz, 30 mA to 37 mA for 40MHz *F 3110052 12/14/2010 AJU Added Ordering Code Definitions. Updated Package Diagrams. Document #: 38-05464 Rev. *F Description of Change Page 12 of 13 [+] Feedback CY7C1019D Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products Automotive Clocks & Buffers Interface Lighting & Power Control cypress.com/go/automotive PSoC Solutions cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF Document #: 38-05464 Rev. *F cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless Page 13 of 13 © Cypress Semiconductor Corporation, 2004-2010. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback